- Packaging:
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- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Driven Configuration:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Conditions sélectionnées:
Découvrez les produits 7
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Texas Instruments |
148
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
4A/6A 2KVRMS DUAL CH ISO DR 8V
|
Tube | - | 3 V ~ 5.5 V | -40°C ~ 125°C (TA) | 16-SOIC (0.154",3.90mm Width) | 16-SOIC | Surface Mount | Half-Bridge | IGBT,N-Channel MOSFET | 5ns,6ns | 1.25V,1.6V | 4A,6A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
4A/6A 2KVRMS DUAL CH ISO DR 8V
|
Tape & Reel (TR) | - | 3 V ~ 5.5 V | -40°C ~ 125°C (TA) | 16-SOIC (0.154",3.90mm Width) | 16-SOIC | Surface Mount | Half-Bridge | IGBT,N-Channel MOSFET | 5ns,6ns | 1.25V,1.6V | 4A,6A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
AUTOMOTIVE 4-A,6-A,3.0-KV(RMS)
|
Tube | Automotive,AEC-Q100 | 3 V ~ 5.5 V | -40°C ~ 150°C (TA) | 16-SOIC (0.154",3.90mm Width) | 16-SOIC | Surface Mount | Half-Bridge | IGBT,N-Channel MOSFET | 5ns,6ns | 1.25V,1.6V | 4A,6A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
4A/6A 2KVRMS DUAL CH ISO DR 8V
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 3 V ~ 5.5 V | -40°C ~ 150°C (TA) | 16-SOIC (0.154",3.90mm Width) | 16-SOIC | Surface Mount | Half-Bridge | IGBT,N-Channel MOSFET | 5ns,6ns | 1.25V,1.6V | 4A,6A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
5A,DUAL LOW-SIDE,NON-INVERTING
|
- | - | 5 V ~ 20 V | -55°C ~ 150°C | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Low-Side | N-Channel,P-Channel MOSFET | 7ns,7ns | 0.8V,2.5V | 5A,5A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 4000 MPQ: 1
|
5A,DUAL LOW-SIDE,NON-INVERTING
|
Tape & Reel (TR) | - | 5 V ~ 20 V | -55°C ~ 150°C | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Low-Side | N-Channel,P-Channel MOSFET | 7ns,7ns | 0.8V,2.5V | 5A,5A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
3A DUAL NON-INVERTING LOW SIDE G
|
- | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-DIP | Through Hole | Low-Side | IGBT | 18ns,18ns | 0.8V,3V | 3A,3A |