- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 29
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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IXYS Integrated Circuits Division |
4,652
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3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO263
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Tube | - | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263-5 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | 11ns，11ns | 0.8V，3.5V | ||
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|
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IXYS Integrated Circuits Division |
1,427
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO220
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Tube | - | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | 11ns，11ns | 0.8V，3.5V | ||
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IXYS Integrated Circuits Division |
1,249
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER LOW SIDE TO-263-5
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Tube | - | 9 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263-5 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | 11ns，11ns | 0.8V，3.5V | ||
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|
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IXYS-RF |
3,907
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR RF 30A HI DCB
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Tube | - | 8 V ~ 18 V | -40°C ~ 150°C (TJ) | 6-SMD，Flat Lead Exposed Pad | - | - | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 4ns，4ns | 0.8V，3.5V | ||
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IXYS-RF |
672
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR RF 30A LOW DCB
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Tube | - | 8 V ~ 18 V | -40°C ~ 150°C (TJ) | 6-SMD，Flat Lead Exposed Pad | - | - | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 4ns，4ns | 0.8V，3.5V | ||
|
|
|
IXYS Integrated Circuits Division |
695
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO263
|
Tube | - | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263-5 | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | 11ns，11ns | 0.8V，3.5V | ||
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|
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Power Integrations |
96
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DUAL GATE DRIVER 30A
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Tray | SCALE-2 | 14 V ~ 16 V | -40°C ~ 85°C (TA) | Module | Module | Surface Mount | - | - | Half-Bridge | 2 | IGBT | - | - | ||
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Power Integrations |
84
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL GATE DRIVER 30A
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Tray | SCALE-2 | 14 V ~ 16 V | -40°C ~ 85°C (TA) | Module | Module | Surface Mount | - | - | Half-Bridge | 2 | IGBT | - | - | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO263
|
Tube | - | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263-5 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | 11ns，11ns | 0.8V，3.5V | ||
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|
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO263
|
Tube | - | 9 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263-5 | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | 11ns，11ns | 0.8V，3.5V | ||
|
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO263
|
Tube | - | 9 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263-5 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | 11ns，11ns | 0.8V，3.5V | ||
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|
IXYS |
Enquête
|
- |
-
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MOQ: 50 MPQ: 1
|
IC MOSFET/IGBT DRIVER TO-263
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Bulk | - | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263 (D2Pak) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | 18ns，16ns | 0.8V，3.5V | ||
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|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DRVR MOSF/IGBT 30A TO263-5
|
Bulk | - | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263 (D2Pak) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | 18ns，16ns | 0.8V，3.5V | ||
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|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DRVR MOSF/IGBT 30A TO263-5
|
Bulk | - | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263 (D2Pak) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | 18ns，16ns | 0.8V，3.5V | ||
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|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DRVR MOSF/IGBT 30A TO263-5
|
Bulk | - | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263 (D2Pak) | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | 18ns，16ns | 0.8V，3.5V | ||
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|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DRVR MOSF/IGBT 30A TO263-5
|
Bulk | - | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263 (D2Pak) | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | 18ns，16ns | 0.8V，3.5V | ||
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|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DRVR MOSF/IGBT 30A TO263-5
|
Tube | - | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263 (D2Pak) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | 18ns，16ns | 0.8V，3.5V | ||
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|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 27 MPQ: 1
|
IC DRVR MOSF/IGBT 30A 28-SOIC
|
Bulk | - | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | 18ns，16ns | 0.8V，3.5V | ||
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|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO220
|
Tube | - | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | 11ns，11ns | 0.8V，3.5V | ||
|
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO220
|
Tube | - | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | 11ns，11ns | 0.8V，3.5V |
