- Packaging：
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- Series：
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- Operating Temperature：
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- Supplier Device Package：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 22
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|
|
|
Diodes Incorporated |
21,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Tape & Reel (TR) | Automotive，AEC-Q101 | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | IGBT，SiC MOSFET | 48ns，35ns | 10A，10A | ||
|
|
|
Diodes Incorporated |
23,086
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Cut Tape (CT) | Automotive，AEC-Q101 | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | IGBT，SiC MOSFET | 48ns，35ns | 10A，10A | ||
|
|
|
Diodes Incorporated |
23,086
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
- | Automotive，AEC-Q101 | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | IGBT，SiC MOSFET | 48ns，35ns | 10A，10A | ||
|
|
|
Diodes Incorporated |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | IGBT，N-Channel MOSFET | 8.9ns，8.9ns | 5A，5A | ||
|
|
|
Diodes Incorporated |
11,323
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | IGBT，N-Channel MOSFET | 8.9ns，8.9ns | 5A，5A | ||
|
|
|
Diodes Incorporated |
11,323
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | IGBT，N-Channel MOSFET | 8.9ns，8.9ns | 5A，5A | ||
|
|
|
Diodes Incorporated |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | IGBT，SiC MOSFET | 48ns，35ns | 10A，10A | ||
|
|
|
Diodes Incorporated |
7,375
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | IGBT，SiC MOSFET | 48ns，35ns | 10A，10A | ||
|
|
|
Diodes Incorporated |
7,375
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
- | - | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | IGBT，SiC MOSFET | 48ns，35ns | 10A，10A | ||
|
|
|
Diodes Incorporated |
33,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | IGBT，N-Channel MOSFET | 13.4ns，12.4ns | 8A，8A | ||
|
|
|
Diodes Incorporated |
34,034
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | IGBT，N-Channel MOSFET | 13.4ns，12.4ns | 8A，8A | ||
|
|
|
Diodes Incorporated |
34,034
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | IGBT，N-Channel MOSFET | 13.4ns，12.4ns | 8A，8A | ||
|
|
|
Diodes Incorporated |
12,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT363
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 6-TSSOP，SC-88，SOT-363 | SOT-363 | N-Channel MOSFET | 210ns，240ns | 2A，2A | ||
|
|
|
Diodes Incorporated |
14,341
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT363
|
Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 6-TSSOP，SC-88，SOT-363 | SOT-363 | N-Channel MOSFET | 210ns，240ns | 2A，2A | ||
|
|
|
Diodes Incorporated |
14,341
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT363
|
- | - | -55°C ~ 150°C (TJ) | 6-TSSOP，SC-88，SOT-363 | SOT-363 | N-Channel MOSFET | 210ns，240ns | 2A，2A | ||
|
|
|
Diodes Incorporated |
27,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | Automotive，AEC-Q101 | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | N-Channel MOSFET | 210ns，240ns | 2A，2A | ||
|
|
|
Diodes Incorporated |
28,160
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | Automotive，AEC-Q101 | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | N-Channel MOSFET | 210ns，240ns | 2A，2A | ||
|
|
|
Diodes Incorporated |
28,160
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | Automotive，AEC-Q101 | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | N-Channel MOSFET | 210ns，240ns | 2A，2A | ||
|
|
|
Diodes Incorporated |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC SYNCH MOSFET CNTLR 8SO
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | N-Channel MOSFET | 175ns，20ns | 2A，7A | ||
|
|
|
Diodes Incorporated |
2,931
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNCH MOSFET CNTLR 8SO
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | N-Channel MOSFET | 175ns，20ns | 2A，7A |
