- Packaging:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Conditions sélectionnées:
Découvrez les produits 34
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-5
|
Tape & Reel (TR) | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Inverting | Single | High-Side or Low-Side | 1 | IGBT,N-Channel MOSFET | 15ns,10ns | 1.2V,2.2V | ||||
Texas Instruments |
3,182
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-5
|
Cut Tape (CT) | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Inverting | Single | High-Side or Low-Side | 1 | IGBT,N-Channel MOSFET | 15ns,10ns | 1.2V,2.2V | ||||
Texas Instruments |
3,182
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-5
|
- | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Inverting | Single | High-Side or Low-Side | 1 | IGBT,N-Channel MOSFET | 15ns,10ns | 1.2V,2.2V | ||||
Texas Instruments |
500
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-5
|
Tape & Reel (TR) | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Inverting | Single | High-Side or Low-Side | 1 | IGBT,N-Channel MOSFET | 15ns,10ns | 1.2V,2.2V | ||||
Texas Instruments |
648
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-5
|
Cut Tape (CT) | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Inverting | Single | High-Side or Low-Side | 1 | IGBT,N-Channel MOSFET | 15ns,10ns | 1.2V,2.2V | ||||
Texas Instruments |
648
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-5
|
- | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Inverting | Single | High-Side or Low-Side | 1 | IGBT,N-Channel MOSFET | 15ns,10ns | 1.2V,2.2V | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC SYNCH MOSFET CNTRLR 4A 8SO
|
Tape & Reel (TR) | 5 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | 305ns,20ns | - | ||||
Diodes Incorporated |
298
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNCH MOSFET CNTRLR 4A 8SO
|
Cut Tape (CT) | 5 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | 305ns,20ns | - | ||||
Diodes Incorporated |
298
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNCH MOSFET CNTRLR 4A 8SO
|
- | 5 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | 305ns,20ns | - | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC FLYBACK CONVERTER SM8
|
Tape & Reel (TR) | 5 V ~ 15 V | -40°C ~ 150°C (TJ) | SOT-223-8 | SM8 | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | 305ns,20ns | - | ||||
Diodes Incorporated |
8
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLYBACK CONVERTER SM8
|
Cut Tape (CT) | 5 V ~ 15 V | -40°C ~ 150°C (TJ) | SOT-223-8 | SM8 | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | 305ns,20ns | - | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC FLYBACK CONVERTER SM8
|
- | 5 V ~ 15 V | -40°C ~ 150°C (TJ) | SOT-223-8 | SM8 | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | 305ns,20ns | - | ||||
Microchip Technology |
677
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 32V INV 8SOIC
|
Cut Tape (CT) | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 120ns,45ns | 0.8V,2.4V | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC FLYBACK CONVERTER SM8
|
- | 5 V ~ 15 V | -40°C ~ 150°C (TJ) | SOT-223-8 | SM8 | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | 305ns,20ns | - | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
IC MOSFET DVR 32V NONINV 8SOIC
|
Tape & Reel (TR) | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 120ns,45ns | 0.8V,2.4V | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 32V NONINV 8SOIC
|
Cut Tape (CT) | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 120ns,45ns | 0.8V,2.4V | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 32V NONINV 8SOIC
|
- | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 120ns,45ns | 0.8V,2.4V | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 32V NONINV 8SOIC
|
Tape & Reel (TR) | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 120ns,45ns | 0.8V,2.4V | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 32V NONINV 8SOIC
|
Cut Tape (CT) | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 120ns,45ns | 0.8V,2.4V | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 32V NONINV 8SOIC
|
- | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 120ns,45ns | 0.8V,2.4V |