Découvrez les produits 34
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Package / Case Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type Rise / Fall Time (Typ) Logic Voltage - VIL, VIH
UCC27536DBVR
Texas Instruments
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-5
Tape & Reel (TR) 10 V ~ 32 V -40°C ~ 140°C (TJ) SC-74A,SOT-753 SOT-23-5 Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET 15ns,10ns 1.2V,2.2V
UCC27536DBVR
Texas Instruments
3,182
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-5
Cut Tape (CT) 10 V ~ 32 V -40°C ~ 140°C (TJ) SC-74A,SOT-753 SOT-23-5 Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET 15ns,10ns 1.2V,2.2V
UCC27536DBVR
Texas Instruments
3,182
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-5
- 10 V ~ 32 V -40°C ~ 140°C (TJ) SC-74A,SOT-753 SOT-23-5 Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET 15ns,10ns 1.2V,2.2V
UCC27536DBVT
Texas Instruments
500
3 jours
-
MOQ: 250  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-5
Tape & Reel (TR) 10 V ~ 32 V -40°C ~ 140°C (TJ) SC-74A,SOT-753 SOT-23-5 Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET 15ns,10ns 1.2V,2.2V
UCC27536DBVT
Texas Instruments
648
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-5
Cut Tape (CT) 10 V ~ 32 V -40°C ~ 140°C (TJ) SC-74A,SOT-753 SOT-23-5 Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET 15ns,10ns 1.2V,2.2V
UCC27536DBVT
Texas Instruments
648
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-5
- 10 V ~ 32 V -40°C ~ 140°C (TJ) SC-74A,SOT-753 SOT-23-5 Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET 15ns,10ns 1.2V,2.2V
ZXGD3101N8TC
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC SYNCH MOSFET CNTRLR 4A 8SO
Tape & Reel (TR) 5 V ~ 15 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Non-Inverting Single High-Side or Low-Side 1 N-Channel MOSFET 305ns,20ns -
ZXGD3101N8TC
Diodes Incorporated
298
3 jours
-
MOQ: 1  MPQ: 1
IC SYNCH MOSFET CNTRLR 4A 8SO
Cut Tape (CT) 5 V ~ 15 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Non-Inverting Single High-Side or Low-Side 1 N-Channel MOSFET 305ns,20ns -
ZXGD3101N8TC
Diodes Incorporated
298
3 jours
-
MOQ: 1  MPQ: 1
IC SYNCH MOSFET CNTRLR 4A 8SO
- 5 V ~ 15 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Non-Inverting Single High-Side or Low-Side 1 N-Channel MOSFET 305ns,20ns -
ZXGD3101T8TA
Diodes Incorporated
Enquête
-
-
MOQ: 1000  MPQ: 1
IC FLYBACK CONVERTER SM8
Tape & Reel (TR) 5 V ~ 15 V -40°C ~ 150°C (TJ) SOT-223-8 SM8 Non-Inverting Single High-Side or Low-Side 1 N-Channel MOSFET 305ns,20ns -
ZXGD3101T8TA
Diodes Incorporated
8
3 jours
-
MOQ: 1  MPQ: 1
IC FLYBACK CONVERTER SM8
Cut Tape (CT) 5 V ~ 15 V -40°C ~ 150°C (TJ) SOT-223-8 SM8 Non-Inverting Single High-Side or Low-Side 1 N-Channel MOSFET 305ns,20ns -
ZXGD3101T8TA
Diodes Incorporated
Enquête
-
-
MOQ: 1  MPQ: 1
IC FLYBACK CONVERTER SM8
- 5 V ~ 15 V -40°C ~ 150°C (TJ) SOT-223-8 SM8 Non-Inverting Single High-Side or Low-Side 1 N-Channel MOSFET 305ns,20ns -
MIC4479YME-TR
Microchip Technology
677
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 32V INV 8SOIC
Cut Tape (CT) 4.5 V ~ 32 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Inverting Independent Low-Side 2 N-Channel MOSFET 120ns,45ns 0.8V,2.4V
ZXGD3101T8TA
Diodes Incorporated
Enquête
-
-
MOQ: 1000  MPQ: 1
IC FLYBACK CONVERTER SM8
- 5 V ~ 15 V -40°C ~ 150°C (TJ) SOT-223-8 SM8 Non-Inverting Single High-Side or Low-Side 1 N-Channel MOSFET 305ns,20ns -
MIC4478YME-T5
Microchip Technology
Enquête
-
-
MOQ: 500  MPQ: 1
IC MOSFET DVR 32V NONINV 8SOIC
Tape & Reel (TR) 4.5 V ~ 32 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Non-Inverting Independent Low-Side 2 N-Channel MOSFET 120ns,45ns 0.8V,2.4V
MIC4478YME-T5
Microchip Technology
Enquête
-
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 32V NONINV 8SOIC
Cut Tape (CT) 4.5 V ~ 32 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Non-Inverting Independent Low-Side 2 N-Channel MOSFET 120ns,45ns 0.8V,2.4V
MIC4478YME-T5
Microchip Technology
Enquête
-
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 32V NONINV 8SOIC
- 4.5 V ~ 32 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Non-Inverting Independent Low-Side 2 N-Channel MOSFET 120ns,45ns 0.8V,2.4V
MIC4478YME-TR
Microchip Technology
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DVR 32V NONINV 8SOIC
Tape & Reel (TR) 4.5 V ~ 32 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Non-Inverting Independent Low-Side 2 N-Channel MOSFET 120ns,45ns 0.8V,2.4V
MIC4478YME-TR
Microchip Technology
Enquête
-
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 32V NONINV 8SOIC
Cut Tape (CT) 4.5 V ~ 32 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Non-Inverting Independent Low-Side 2 N-Channel MOSFET 120ns,45ns 0.8V,2.4V
MIC4478YME-TR
Microchip Technology
Enquête
-
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 32V NONINV 8SOIC
- 4.5 V ~ 32 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Non-Inverting Independent Low-Side 2 N-Channel MOSFET 120ns,45ns 0.8V,2.4V