- Voltage - Supply：
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- Operating Temperature：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 19
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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IXYS Integrated Circuits Division |
2,946
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 9A NON-INV 8-DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | 22ns，15ns | 0.8V，3V | 9A，9A | ||
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IXYS Integrated Circuits Division |
1,461
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A DUAL NONINV 8DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm)，6 Leads | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS Integrated Circuits Division |
1,719
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3 jours |
-
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MOQ: 1 MPQ: 1
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MOSFET DVR ULT FAST 14A 8-DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | 25ns，18ns | 0.8V，3V | 14A，14A | ||
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IXYS Integrated Circuits Division |
149
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3 jours |
-
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MOQ: 1 MPQ: 1
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MOSFET N-CH 2A DUAL LO SIDE 8-DI
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS Integrated Circuits Division |
633
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A INV 8-DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS Integrated Circuits Division |
581
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A DUAL ENABLE 8DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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2A MOSFET 8 DIP DUAL INV/NON-INV
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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2A 8 DIP DUAL INVERTING
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | 22ns，15ns | 0.8V，3V | 9A，9A | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8DIP
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | 22ns，15ns | 0.8V，3V | 9A，9A | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DVR 4A DUAL HS 8DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
14A 8 PIN DIP INVERTING
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | 25ns，18ns | 0.8V，3V | 14A，14A | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
14A 8 PIN DIP NON INVERTING
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | 25ns，18ns | 0.8V，3V | 14A，14A | ||
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STMicroelectronics |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
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IC DRIVER GATE IGBT/MOSFET 8DIP
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Tube | 12 V ~ 26 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 100ns，100ns (Max) | 0.8V，4.2V | 1.3A，1.7A | ||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 2800 MPQ: 1
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IC PWM HIGH-SIDE SWITCH 8-DIP
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Tube | 25V (Max) | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | - | ||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 2800 MPQ: 1
|
IC PWM HIGH-SIDE SWITCH 8-DIP
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Tube | 25V (Max) | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | - | ||
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STMicroelectronics |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
|
IC IGBT/MOSFET DRIVER ADV 8-DIP
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Tube | 12 V ~ 26 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 100ns，100ns (Max) | 0.8V，4.2V | 1.3A，1.7A | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
3A DUAL NON-INVERTING LOW SIDE G
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- | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | CMOS/TTL | Independent | Low-Side | 2 | IGBT | 18ns，18ns | 0.8V，3V | 3A，3A | ||
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Maxim Integrated |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC MOSFET DVR DUAL PWR DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A |
