- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 1,380
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Texas Instruments |
30,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
Tape & Reel (TR) | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 5ns,7ns | 0.8V,2V | 500mA,500mA | ||||
Texas Instruments |
35,071
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
Cut Tape (CT) | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 5ns,7ns | 0.8V,2V | 500mA,500mA | ||||
Texas Instruments |
35,071
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
- | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 5ns,7ns | 0.8V,2V | 500mA,500mA | ||||
Texas Instruments |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC PERIPH DRVR DUAL HS 8-SOIC
|
Tape & Reel (TR) | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 5ns,7ns | 0.8V,2V | 500mA,500mA | ||||
Texas Instruments |
10,624
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PERIPH DRVR DUAL HS 8-SOIC
|
Cut Tape (CT) | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 5ns,7ns | 0.8V,2V | 500mA,500mA | ||||
Texas Instruments |
10,624
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PERIPH DRVR DUAL HS 8-SOIC
|
- | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 5ns,7ns | 0.8V,2V | 500mA,500mA | ||||
Texas Instruments |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Independent | Low-Side | 2 | - | 50ns,90ns | 0.8V,2V | 500mA,500mA | ||||
Texas Instruments |
11,490
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Independent | Low-Side | 2 | - | 50ns,90ns | 0.8V,2V | 500mA,500mA | ||||
Texas Instruments |
11,490
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
- | - | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Independent | Low-Side | 2 | - | 50ns,90ns | 0.8V,2V | 500mA,500mA | ||||
IXYS Integrated Circuits Division |
8,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 10ns,8ns | 0.8V,2.4V | 1.5A,1.5A | ||||
IXYS Integrated Circuits Division |
9,070
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 10ns,8ns | 0.8V,2.4V | 1.5A,1.5A | ||||
IXYS Integrated Circuits Division |
9,070
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
|
- | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 10ns,8ns | 0.8V,2.4V | 1.5A,1.5A | ||||
ON Semiconductor |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC BRIDGE DVR P-N 2A 30V 8-SOIC
|
Tape & Reel (TR) | - | 8 V ~ 27 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Inverting,Non-Inverting | Independent | Half-Bridge | 2 | N-Channel,P-Channel MOSFET | 21ns,8ns | 0.8V,2.25V | 1A,1.5A | ||||
ON Semiconductor |
12,102
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC BRIDGE DVR P-N 2A 30V 8-SOIC
|
Cut Tape (CT) | - | 8 V ~ 27 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Inverting,Non-Inverting | Independent | Half-Bridge | 2 | N-Channel,P-Channel MOSFET | 21ns,8ns | 0.8V,2.25V | 1A,1.5A | ||||
ON Semiconductor |
12,102
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC BRIDGE DVR P-N 2A 30V 8-SOIC
|
- | - | 8 V ~ 27 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Inverting,Non-Inverting | Independent | Half-Bridge | 2 | N-Channel,P-Channel MOSFET | 21ns,8ns | 0.8V,2.25V | 1A,1.5A | ||||
Infineon Technologies |
240,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER DUAL LOW SIDE 8SOIC
|
Tape & Reel (TR) | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | 15ns,10ns | 0.8V,2.7V | 2.3A,3.3A | ||||
Infineon Technologies |
241,985
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER DUAL LOW SIDE 8SOIC
|
Cut Tape (CT) | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | 15ns,10ns | 0.8V,2.7V | 2.3A,3.3A | ||||
Infineon Technologies |
241,985
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER DUAL LOW SIDE 8SOIC
|
- | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | 15ns,10ns | 0.8V,2.7V | 2.3A,3.3A | ||||
Texas Instruments |
27,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
MOSFET DRVR 5A DUAL LOSIDE 8SOIC
|
Tape & Reel (TR) | - | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 14ns,12ns | 0.8V,2.2V | 3A,5A | ||||
Texas Instruments |
28,897
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET DRVR 5A DUAL LOSIDE 8SOIC
|
Cut Tape (CT) | - | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 14ns,12ns | 0.8V,2.2V | 3A,5A |