- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 21
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 1000 MPQ: 1
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MOSFET DRIVER 2CH 6A 8TDFN
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Tube | 7.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-TDFN (3x3) | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 20ns，20ns | 2.4V，9.6V | 6A，6A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 6000 MPQ: 1
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MOSFET DRIVER 2CH 6A 8TDFN
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Tape & Reel (TR) | 7.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-TDFN (3x3) | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 20ns，20ns | 2.4V，9.6V | 6A，6A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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MOSFET DRIVER 2CH 6A 8TDFN
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Tube | 7.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC-EP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 20ns，20ns | 2.4V，9.6V | 6A，6A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 6000 MPQ: 1
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MOSFET DRIVER 2CH 6A 8TDFN
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Tape & Reel (TR) | 7.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC-EP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 20ns，20ns | 2.4V，9.6V | 6A，6A | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC MOSFET DVR SYNC VR12 8-DFN
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Tape & Reel (TR) | 4.5 V ~ 5.5 V | 0°C ~ 150°C (TJ) | 8-DFN (2x2) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 16ns，11ns | 0.6V，3.3V | - | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR SYNC VR12 8-DFN
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Cut Tape (CT) | 4.5 V ~ 5.5 V | 0°C ~ 150°C (TJ) | 8-DFN (2x2) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 16ns，11ns | 0.6V，3.3V | - | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR SYNC VR12 8-DFN
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- | 4.5 V ~ 5.5 V | 0°C ~ 150°C (TJ) | 8-DFN (2x2) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 16ns，11ns | 0.6V，3.3V | - | ||
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ON Semiconductor |
3,000
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3 jours |
-
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MOQ: 3000 MPQ: 1
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IC MOSFET DVR 1CH 10A 8DFN
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Tape & Reel (TR) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DFN (2x2) | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 4ns，4ns | 1.5V，1.9V | 10A，10A | |||
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ON Semiconductor |
4,238
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 1CH 10A 8DFN
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Cut Tape (CT) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DFN (2x2) | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 4ns，4ns | 1.5V，1.9V | 10A，10A | |||
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ON Semiconductor |
4,238
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3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8DFN
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- | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DFN (2x2) | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 4ns，4ns | 1.5V，1.9V | 10A，10A | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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LOW-COST HIGH VOLTAGE DUA
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Tape & Reel (TR) | - | - | 8-DFN (2x2) | - | - | - | - | - | - | - | - | |||
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ON Semiconductor |
2,779
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3 jours |
-
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MOQ: 1 MPQ: 1
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LOW-COST HIGH VOLTAGE DUA
|
Cut Tape (CT) | - | - | 8-DFN (2x2) | - | - | - | - | - | - | - | - | |||
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ON Semiconductor |
2,779
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3 jours |
-
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MOQ: 1 MPQ: 1
|
LOW-COST HIGH VOLTAGE DUA
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- | - | - | 8-DFN (2x2) | - | - | - | - | - | - | - | - | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8DFN
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Tape & Reel (TR) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DFN (2x2) | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 4ns，4ns | - | 10A，10A | |||
|
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ON Semiconductor |
2,162
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8DFN
|
Cut Tape (CT) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DFN (2x2) | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 4ns，4ns | - | 10A，10A | |||
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ON Semiconductor |
2,162
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8DFN
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- | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DFN (2x2) | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 4ns，4ns | - | 10A，10A | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
|
IC MOSFET DVR DUAL HV 8DFN
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Tape & Reel (TR) | 4.6 V ~ 5.5 V | -10°C ~ 150°C (TJ) | 8-DFN (2x2) | Inverting，Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 20ns，15ns | 0.8V，2V | - | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
|
IC MOSFET DRIVER SMD
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Tape & Reel (TR) | 4.5 V ~ 5.5 V | 0°C ~ 150°C (TJ) | 8-DFN (2x2) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 16ns，11ns | 0.6V，3.3V | - | |||
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 3300 MPQ: 1
|
MOSFET DRVR 1.5A SGL HS 8DFN
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Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN (2x3) | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
|
MOSFET DRVR 1.5A SGL HS 8DFN
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Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DFN (2x3) | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A |
