- Packaging:
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- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Driven Configuration:
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- Rise / Fall Time (Typ):
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 63
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
IXYS Integrated Circuits Division |
4,652
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO263
|
Tube | - | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263-5 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | 11ns,11ns | 30A,30A | ||||
IXYS Integrated Circuits Division |
1,427
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO220
|
Tube | - | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | 11ns,11ns | 30A,30A | ||||
IXYS Integrated Circuits Division |
1,249
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER LOW SIDE TO-263-5
|
Tube | - | 9 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263-5 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | 11ns,11ns | 30A,30A | ||||
IXYS-RF |
3,907
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR RF 30A HI DCB
|
Tube | - | 8 V ~ 18 V | -40°C ~ 150°C (TJ) | 6-SMD,Flat Lead Exposed Pad | - | - | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | 4ns,4ns | 30A,30A | ||||
IXYS-RF |
672
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR RF 30A LOW DCB
|
Tube | - | 8 V ~ 18 V | -40°C ~ 150°C (TJ) | 6-SMD,Flat Lead Exposed Pad | - | - | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | 4ns,4ns | 30A,30A | ||||
IXYS Integrated Circuits Division |
695
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO263
|
Tube | - | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263-5 | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | 11ns,11ns | 30A,30A | ||||
IXYS-RF |
132
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
15A,15V MOSFET DRIVER
|
Tube | - | 8 V ~ 18 V | -40°C ~ 85°C | 6-SMD,Flat Leads | 6-SMD | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | 4ns,4ns | 15A,15A | ||||
IXYS-RF |
60
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
15A DUAL MOSFET DRIVER
|
Tube | - | 8 V ~ 18 V | -40°C ~ 85°C | 8-SMD,Flat Lead | 8-SMD | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 4ns,4ns | 15A,15A | ||||
IXYS-RF |
90
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
15A LOW SIDE MOSFET DRIVER IN SM
|
Tube | - | 8 V ~ 18 V | -40°C ~ 85°C | 16-SMD | - | Surface Mount | Non-Inverting | Single | Low-Side | 2 | N-Channel,P-Channel MOSFET | 4ns,4ns | 15A,15A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO263
|
Tube | - | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263-5 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | 11ns,11ns | 30A,30A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO263
|
Tube | - | 9 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263-5 | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | 11ns,11ns | 30A,30A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO263
|
Tube | - | 9 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263-5 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | 11ns,11ns | 30A,30A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSFET DRIVER LS 8A SGL 8-DIP
|
Tube | - | 4.5 V ~ 25 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | 14ns,15ns | 8A,8A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 94 MPQ: 1
|
IC MOSFET DRIVER LS 8A SGL 8SOIC
|
Tube | - | 4.5 V ~ 25 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | 14ns,15ns | 8A,8A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSFET DRVR LS 8A SGL 5TO-263
|
Tube | - | 4.5 V ~ 25 V | -40°C ~ 150°C (TJ) | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263 (D2Pak) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | 14ns,15ns | 8A,8A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSFET DRIVER LS 14A SGL 8DIP
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | 25ns,22ns | 14A,14A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSFET DRVR LS 14A SGL 5TO263
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263 (D2Pak) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | 25ns,22ns | 14A,14A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC MOSFET/IGBT DRIVER TO-263
|
Bulk | - | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263 (D2Pak) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | 18ns,16ns | 30A,30A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC HIGH CURR GATE DRVR 9A TO-263
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263 (D2Pak) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | 10ns,10ns | 9A,9A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 94 MPQ: 1
|
IC DRIVER MOSF/IGBT 14A14SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | 22ns,20ns | 14A,14A |