Voltage - Supply:
Package / Case:
Supplier Device Package:
Rise / Fall Time (Typ):
Découvrez les produits 4,485
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
ADP3611JRMZ-REEL
ON Semiconductor
Enquête
-
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER DUAL 10-MSOP
Cut Tape (CT) - 4.6 V ~ 5.5 V -10°C ~ 150°C (TJ) 10-TFSOP,10-MSOP (0.118",3.00mm Width) 10-MSOP Surface Mount Inverting,Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 20ns,15ns 0.8V,2V -
ADP3611JRMZ-REEL
ON Semiconductor
Enquête
-
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER DUAL 10-MSOP
- - 4.6 V ~ 5.5 V -10°C ~ 150°C (TJ) 10-TFSOP,10-MSOP (0.118",3.00mm Width) 10-MSOP Surface Mount Inverting,Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 20ns,15ns 0.8V,2V -
IR11671ASPBF
Infineon Technologies
Enquête
-
-
MOQ: 380  MPQ: 1
IC FET DRIVER EXTERNAL
Tube - - - 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount - - - - - - - -
IR11671ASTRPBF
Infineon Technologies
Enquête
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-
MOQ: 2500  MPQ: 1
IC FET DRIVER EXTERNAL
Tape & Reel (TR) - - - 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount - - - - - - - -
MCP1415T-E/MC
Microchip Technology
Enquête
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-
MOQ: 3300  MPQ: 1
MOSFET DRVR 1.5A SGL HS 8DFN
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-VFDFN Exposed Pad 8-DFN (2x3) Surface Mount Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET 20ns,20ns 0.8V,2.4V 1.5A,1.5A
MCP1416T-E/MC
Microchip Technology
Enquête
-
-
MOQ: 3300  MPQ: 1
MOSFET DRVR 1.5A SGL HS 8DFN
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-VFDFN Exposed Pad 8-DFN (2x3) Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET 20ns,20ns 0.8V,2.4V 1.5A,1.5A
BM6103FV-CE2
ROHM Semiconductor
Enquête
-
-
MOQ: 0  MPQ: 1
1 CHANNEL GATE DRIVER 20-PIN SSO
Bulk - 4.5 ~ 5.5 V -40°C ~ 150°C (TJ) 20-LSSOP (0.240",6.10mm Width) 20-SSOP-B Surface Mount Inverting,Non-Inverting - Low-Side 1 IGBT,N-Channel,P-Channel MOSFET 50ns,50ns - -
MAQ4123YME-TRVAO
Microchip Technology
Enquête
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-
MOQ: 1  MPQ: 1
IC MOSFET DVR 3A L-SIDE 8SOIC
Cut Tape (CT) Automotive,AEC-Q100 4.5 V ~ 20 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET 11ns,11ns 0.8V,2.4V 3A,3A
MAQ4123YME-TRVAO
Microchip Technology
Enquête
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-
MOQ: 1  MPQ: 1
IC MOSFET DVR 3A L-SIDE 8SOIC
- Automotive,AEC-Q100 4.5 V ~ 20 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET 11ns,11ns 0.8V,2.4V 3A,3A
MAQ4125YME-TRVAO
Microchip Technology
Enquête
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-
MOQ: 1  MPQ: 1
IC MOSFET DVR 3A L-SIDE 8SOIC
Cut Tape (CT) Automotive,AEC-Q100 4.5 V ~ 20 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting,Non-Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET 11ns,11ns 0.8V,2.4V 3A,3A
MAQ4125YME-TRVAO
Microchip Technology
Enquête
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-
MOQ: 1  MPQ: 1
IC MOSFET DVR 3A L-SIDE 8SOIC
- Automotive,AEC-Q100 4.5 V ~ 20 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting,Non-Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET 11ns,11ns 0.8V,2.4V 3A,3A
MAQ4124YME-TRVAO
Microchip Technology
Enquête
-
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 3A L-SIDE 8SOIC
Cut Tape (CT) Automotive,AEC-Q100 4.5 V ~ 20 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET 11ns,11ns 0.8V,2.4V 3A,3A
MAQ4124YME-TRVAO
Microchip Technology
Enquête
-
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 3A L-SIDE 8SOIC
- Automotive,AEC-Q100 4.5 V ~ 20 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET 11ns,11ns 0.8V,2.4V 3A,3A
TSC428EPA
Maxim Integrated
Enquête
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-
MOQ: 2500  MPQ: 1
IC MOSFET DVR DUAL PWR DIP
Tube - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-DIP (0.300",7.62mm) 8-DIP Through Hole Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET 25ns,25ns 0.8V,2.4V 1.5A,1.5A
LM2722MX
Texas Instruments
Enquête
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-
MOQ: 2500  MPQ: 1
IC MOSFET DRIVER HI SPD 8-SOIC
Tape & Reel (TR) - 4 V ~ 7 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 17ns,12ns 0.8V,2.4V 3A,3.2A
FAN3122CMX-F085
ON Semiconductor
Enquête
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-
MOQ: 2500  MPQ: 1
IC GATE DVR SGL 9A HS 8SOIC
Tape & Reel (TR) Automotive,AEC-Q100 4.5 V ~ 18 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single Low-Side 1 N-Channel MOSFET 23ns,19ns - 10.6A,11.4A
IX2204NE
IXYS Integrated Circuits Division
Enquête
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-
MOQ: 1000  MPQ: 1
IC IGBT GATE DVR DUAL 16SOIC
Tube - -10 V ~ 25 V -55°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC Surface Mount Non-Inverting Independent Low-Side 2 IGBT -,8ns 0.8V,2V 2A,4A
IX2204NETR
IXYS Integrated Circuits Division
Enquête
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-
MOQ: 2000  MPQ: 1
IC IGBT GATE DVR DUAL 16SOIC
Tape & Reel (TR) - -10 V ~ 25 V -55°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC Surface Mount Non-Inverting Independent Low-Side 2 IGBT -,8ns 0.8V,2V 2A,4A
MAX4426MJA/883B
Maxim Integrated
Enquête
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-
MOQ: 0  MPQ: 1
IC MOSFET DRVR COTS
Tube Military,MIL-STD-883 4.5 V ~ 18 V -55°C ~ 125°C (TA) 8-CDIP (0.300",7.62mm) 8-CERDIP Through Hole Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET 20ns,20ns 0.8V,2.4V 1.5A,1.5A
MAX4429MJA/883B
Maxim Integrated
Enquête
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-
MOQ: 0  MPQ: 1
IC MOSFET DRVR COTS
Tube Military,MIL-STD-883 4.5 V ~ 18 V -55°C ~ 125°C (TA) 8-CDIP (0.300",7.62mm) 8-CERDIP Through Hole Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET 25ns,25ns 0.8V,2.4V 6A,6A