- Fabricant:
-
- Packaging:
-
- Series:
-
- Voltage - Supply:
-
- Operating Temperature:
-
- Package / Case:
-
- Supplier Device Package:
-
- Mounting Type:
-
- Input Type:
-
- Channel Type:
-
- Driven Configuration:
-
- Gate Type:
-
- Rise / Fall Time (Typ):
-
- Logic Voltage - VIL, VIH:
-
- Current - Peak Output (Source, Sink):
-
- Conditions sélectionnées:
Découvrez les produits 4,485
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
3,044
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER DUAL LOW SIDE 8-SOIC
|
Tube | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | 15ns,10ns | 0.8V,2.7V | 2.3A,3.3A | ||||
Renesas Electronics America Inc. |
4,296
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL PWR 8-SOIC
|
Tube | - | 4.5 V ~ 15 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | 20ns,20ns | 0.8V,2V | - | ||||
Maxim Integrated |
363
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRV DUAL NONINV 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,20ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Texas Instruments |
9,183
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-SOIC
|
Tube | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | 20ns,20ns | 1.1V,2.7V | 9A,9A | ||||
Maxim Integrated |
628
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL INV 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,20ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Maxim Integrated |
351
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL PWR 8-DIP
|
Tube | - | 4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 20ns,20ns | 0.8V,2V | - | ||||
IXYS Integrated Circuits Division |
2,404
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A INV 8-SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | 9ns,8ns | 0.8V,3V | 4A,4A | ||||
Maxim Integrated |
506
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRV DUAL NONINV 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,20ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Texas Instruments |
4,175
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-SOIC
|
Tube | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | 20ns,20ns | 1.1V,2.7V | 9A,9A | ||||
Texas Instruments |
1,840
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSF W/LOSS PROT 8SOIC
|
Tube | - | 7 V ~ 26 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | 1.5V,3.5V | - | ||||
Texas Instruments |
3,959
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-DIP
|
Tube | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | 20ns,20ns | 1.1V,2.7V | 9A,9A | ||||
Texas Instruments |
3,074
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-DIP
|
Tube | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | 20ns,20ns | 1.1V,2.7V | 9A,9A | ||||
IXYS Integrated Circuits Division |
233
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A DUAL HS TO263-5
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263-5 | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | 22ns,15ns | 0.8V,3V | 9A,9A | ||||
Texas Instruments |
6,963
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-MSOP
|
Tube | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | 20ns,20ns | 1.1V,2.7V | 9A,9A | ||||
Texas Instruments |
959
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-MSOP
|
Tube | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | 20ns,20ns | 1V,2V | 9A,9A | ||||
Texas Instruments |
2,250
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
LMG1020YFFR BEARCAT 6-PIN WCSP
|
Tape & Reel (TR) | - | 4.75 V ~ 5.25 V | -40°C ~ 125°C (TJ) | 6-UFBGA,DSBGA | 6-DSBGA (1.2x0.8) | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 1 | N-Channel,P-Channel MOSFET | 375ps,350ps | 1.8V,1.7V | 7A,5A | ||||
Texas Instruments |
2,368
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
LMG1020YFFR BEARCAT 6-PIN WCSP
|
Cut Tape (CT) | - | 4.75 V ~ 5.25 V | -40°C ~ 125°C (TJ) | 6-UFBGA,DSBGA | 6-DSBGA (1.2x0.8) | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 1 | N-Channel,P-Channel MOSFET | 375ps,350ps | 1.8V,1.7V | 7A,5A | ||||
Texas Instruments |
2,368
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
LMG1020YFFR BEARCAT 6-PIN WCSP
|
- | - | 4.75 V ~ 5.25 V | -40°C ~ 125°C (TJ) | 6-UFBGA,DSBGA | 6-DSBGA (1.2x0.8) | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 1 | N-Channel,P-Channel MOSFET | 375ps,350ps | 1.8V,1.7V | 7A,5A | ||||
Texas Instruments |
3,611
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-DIP
|
Tube | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | 20ns,20ns | 1.1V,2.7V | 9A,9A | ||||
Maxim Integrated |
259
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL NONINV 8-DIP
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,20ns | 0.8V,2.4V | 1.5A,1.5A |