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- Channel Type:
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- Driven Configuration:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 4,485
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Microchip Technology |
Enquête
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MOQ: 800 MPQ: 1
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IC DRIVER MOSFET 6A LO SIDE 8DIP
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | 12ns,13ns | 0.8V,2.4V | 6A,6A | ||||
Microchip Technology |
Enquête
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- |
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MOQ: 855 MPQ: 1
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IC DRIVER MOSFET 9A LOSIDE 8SOIC
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | 20ns,24ns | 0.8V,2.4V | 9A,9A | ||||
Microchip Technology |
Enquête
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MOQ: 855 MPQ: 1
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IC DRIVER MOSFET 9A LOSIDE 8SOIC
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | 20ns,24ns | 0.8V,2.4V | 9A,9A | ||||
Microchip Technology |
Enquête
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- |
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MOQ: 700 MPQ: 1
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IC DRIVER MOSFET 9A LOSIDE 8DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | 20ns,24ns | 0.8V,2.4V | 9A,9A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 550 MPQ: 1
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IC DRIVER MOSFET 3A DUAL 8DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 28ns,32ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 550 MPQ: 1
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IC DRIVER MOSFET 3A DUAL 8DIP
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 28ns,32ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
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- |
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MOQ: 855 MPQ: 1
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IC DRIVER MOSFET 3A DUAL 8SOIC
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 28ns,32ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 550 MPQ: 1
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IC DRIVER MOSFET 3A DUAL 8DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 28ns,32ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 550 MPQ: 1
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IC DRIVER MOSFET 3A DUAL 8DIP
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 28ns,32ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 550 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 28ns,32ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
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- |
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MOQ: 950 MPQ: 1
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IC DRIVER MOSFET 1.5A DUAL 8SOIC
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,29ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
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MOQ: 2500 MPQ: 1
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IC DRIVER MOSFET 1.5A DUAL 8SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,29ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
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- |
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MOQ: 750 MPQ: 1
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IC DRIVER MOSFET 1.5A DUAL 8DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,29ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
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- |
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MOQ: 950 MPQ: 1
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IC DRIVER MOSFET 1.5A DUAL 8SOIC
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,29ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
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- |
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MOQ: 2500 MPQ: 1
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IC DRIVER MOSFET 1.5A DUAL 8SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,29ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
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- |
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MOQ: 950 MPQ: 1
|
IC DRIVER MOSFET 1.5A DUAL 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,29ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
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- |
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MOQ: 2500 MPQ: 1
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IC DRIVER MOSFET 1.5A DUAL 8SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,29ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
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- |
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MOQ: 750 MPQ: 1
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IC DRIVER MOSFET 1.5A DUAL 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,29ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
|
- |
-
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MOQ: 950 MPQ: 1
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IC DRIVER MOSFET 1.5A DUAL 8SOIC
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,29ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DRIVER MOSFET 1.5A DUAL 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,29ns | 0.8V,2.4V | 1.5A,1.5A |