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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 4,485
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Maxim Integrated |
2,132
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR FET P-P 8-UMAX
|
Tube | - | 4.5 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-uMax-EP | Surface Mount | RC Input Circuit | Synchronous | Low-Side | 2 | N-Channel MOSFET | 10ns，10ns | - | 3A，3A | ||
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|
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Texas Instruments |
2,637
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMPLEMENT PWR DRIVER 16-DIP
|
Tube | - | 5 V ~ 40 V | 0°C ~ 70°C (TA) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 40ns，40ns | 0.8V，2.2V | 1.5A，1.5A | ||
|
|
|
Texas Instruments |
3,014
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL NON-INVERT PWR DRV 8DIP
|
Tube | - | 5 V ~ 35 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 25ns，25ns | 0.8V，2V | 3A，3A | ||
|
|
|
Powerex Inc. |
1,469
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR FOR IGBT MOD
|
Bulk | - | 14 V ~ 15 V | -20°C ~ 60°C (TA) | 14-SIP Module，12 Leads | Module | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT | 500ns，300ns | - | 2A，2A | ||
|
|
|
IXYS-RF |
3,907
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR RF 30A HI DCB
|
Tube | - | 8 V ~ 18 V | -40°C ~ 150°C (TJ) | 6-SMD，Flat Lead Exposed Pad | - | - | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 4ns，4ns | 0.8V，3.5V | 30A，30A | ||
|
|
|
IXYS-RF |
672
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR RF 30A LOW DCB
|
Tube | - | 8 V ~ 18 V | -40°C ~ 150°C (TJ) | 6-SMD，Flat Lead Exposed Pad | - | - | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 4ns，4ns | 0.8V，3.5V | 30A，30A | ||
|
|
|
Powerex Inc. |
2,246
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC IGBT GATE DVR/DC-DC CONV 12A
|
Bulk | - | 14.2 V ~ 15.8 V | -20°C ~ 60°C (TA) | 21-SIP Module | Module | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT | 300ns，300ns | - | 12A，12A | ||
|
|
|
Power Integrations |
261
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL GATE DRIVER 18A
|
Tray | SCALE-1 | 15V | -40°C ~ 85°C (TA) | Module | Module | Surface Mount | - | - | Half-Bridge | 2 | IGBT，N-Channel，P-Channel MOSFET | - | - | 18A，18A | ||
|
|
|
Diodes Incorporated |
12,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT363
|
Tape & Reel (TR) | - | 40V (Max) | -55°C ~ 150°C (TJ) | 6-TSSOP，SC-88，SOT-363 | SOT-363 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 210ns，240ns | - | 2A，2A | ||
|
|
|
Diodes Incorporated |
14,341
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT363
|
Cut Tape (CT) | - | 40V (Max) | -55°C ~ 150°C (TJ) | 6-TSSOP，SC-88，SOT-363 | SOT-363 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 210ns，240ns | - | 2A，2A | ||
|
|
|
Diodes Incorporated |
14,341
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT363
|
- | - | 40V (Max) | -55°C ~ 150°C (TJ) | 6-TSSOP，SC-88，SOT-363 | SOT-363 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 210ns，240ns | - | 2A，2A | ||
|
|
|
Diodes Incorporated |
27,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | Automotive，AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 210ns，240ns | - | 2A，2A | ||
|
|
|
Diodes Incorporated |
28,160
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | Automotive，AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 210ns，240ns | - | 2A，2A | ||
|
|
|
Diodes Incorporated |
28,160
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | Automotive，AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 210ns，240ns | - | 2A，2A | ||
|
|
|
Diodes Incorporated |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | 20V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | 8.3ns，10.8ns | - | 9A，9A | ||
|
|
|
Diodes Incorporated |
6,706
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | 20V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | 8.3ns，10.8ns | - | 9A，9A | ||
|
|
|
Diodes Incorporated |
6,706
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | 20V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | 8.3ns，10.8ns | - | 9A，9A | ||
|
|
|
ON Semiconductor |
75,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR 2A HS LOW SIDE 6MLP
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MLP (2x2) | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 13ns，9ns | 0.8V，2V | 3A，3A | ||
|
|
|
ON Semiconductor |
76,308
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 2A HS LOW SIDE 6MLP
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MLP (2x2) | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 13ns，9ns | 0.8V，2V | 3A，3A | ||
|
|
|
ON Semiconductor |
76,308
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 2A HS LOW SIDE 6MLP
|
- | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MLP (2x2) | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 13ns，9ns | 0.8V，2V | 3A，3A |
