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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 4,719
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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ON Semiconductor |
7,040
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
- | Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | 5A，5A | ||
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Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 14DSO
|
Tape & Reel (TR) | EiceDriver | 10 V ~ 17.5 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-DSO | Surface Mount | Non-Inverting | Independent | Half-Bridge | N-Channel，P-Channel MOSFET | 600V | 48ns，37ns | 1.1V，1.7V | 1.8A，2.3A | ||
|
|
|
Infineon Technologies |
9,815
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 14DSO
|
Cut Tape (CT) | EiceDriver | 10 V ~ 17.5 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-DSO | Surface Mount | Non-Inverting | Independent | Half-Bridge | N-Channel，P-Channel MOSFET | 600V | 48ns，37ns | 1.1V，1.7V | 1.8A，2.3A | ||
|
|
|
Infineon Technologies |
9,815
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 14DSO
|
- | EiceDriver | 10 V ~ 17.5 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-DSO | Surface Mount | Non-Inverting | Independent | Half-Bridge | N-Channel，P-Channel MOSFET | 600V | 48ns，37ns | 1.1V，1.7V | 1.8A，2.3A | ||
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|
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Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 14DSO
|
Tape & Reel (TR) | EiceDriver | 10 V ~ 25 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | PG-DSO-14 | Surface Mount | Non-Inverting | Independent | Half-Bridge | IGBT | 600V | 48ns，37ns | 1.1V，1.7V | 2.3A，2.3A | ||
|
|
|
Infineon Technologies |
4,972
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 14DSO
|
Cut Tape (CT) | EiceDriver | 10 V ~ 25 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | PG-DSO-14 | Surface Mount | Non-Inverting | Independent | Half-Bridge | IGBT | 600V | 48ns，37ns | 1.1V，1.7V | 2.3A，2.3A | ||
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|
|
Infineon Technologies |
4,972
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 14DSO
|
- | EiceDriver | 10 V ~ 25 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | PG-DSO-14 | Surface Mount | Non-Inverting | Independent | Half-Bridge | IGBT | 600V | 48ns，37ns | 1.1V，1.7V | 2.3A，2.3A | ||
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Texas Instruments |
21,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR GATE HALF BRIDGE 10WSON
|
Tape & Reel (TR) | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 118V | 15ns，15ns | 0.8V，2.2V | 1.8A，1.8A | ||
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|
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Texas Instruments |
26,488
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR GATE HALF BRIDGE 10WSON
|
Cut Tape (CT) | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 118V | 15ns，15ns | 0.8V，2.2V | 1.8A，1.8A | ||
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|
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Texas Instruments |
26,488
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR GATE HALF BRIDGE 10WSON
|
- | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 118V | 15ns，15ns | 0.8V，2.2V | 1.8A，1.8A | ||
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|
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Texas Instruments |
13,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10-MSOP
|
Tape & Reel (TR) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Surface Mount | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 118V | 600ns，600ns | 0.8V，2.2V | 1.6A，1.6A | ||
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|
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Texas Instruments |
14,911
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10-MSOP
|
Cut Tape (CT) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Surface Mount | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 118V | 600ns，600ns | 0.8V，2.2V | 1.6A，1.6A | ||
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|
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Texas Instruments |
14,911
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10-MSOP
|
- | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Surface Mount | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 118V | 600ns，600ns | 0.8V，2.2V | 1.6A，1.6A | ||
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|
|
Analog Devices Inc. |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR DUAL NONINVERT 4A 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
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|
|
Analog Devices Inc. |
9,980
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR DUAL NONINVERT 4A 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
|
|
|
Analog Devices Inc. |
9,980
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR DUAL NONINVERT 4A 8SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
|
|
|
Renesas Electronics America Inc. |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER DUAL 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 15 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | High-Side or Low-Side | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
|
|
|
Renesas Electronics America Inc. |
5,201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 15 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | High-Side or Low-Side | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
|
|
|
Renesas Electronics America Inc. |
5,201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 8-SOIC
|
- | - | 4.5 V ~ 15 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | High-Side or Low-Side | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
|
|
|
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA |
