- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 19
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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IXYS Integrated Circuits Division |
42,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC MOSFET DVR NONINV 1.5A 8-DFN
|
Tape & Reel (TR) | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | Non-Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | 1.5A，1.5A | ||
|
|
|
IXYS Integrated Circuits Division |
42,369
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR NONINV 1.5A 8-DFN
|
Cut Tape (CT) | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | Non-Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | 1.5A，1.5A | ||
|
|
|
IXYS Integrated Circuits Division |
42,369
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR NONINV 1.5A 8-DFN
|
- | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | Non-Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | 1.5A，1.5A | ||
|
|
|
IXYS Integrated Circuits Division |
10,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC MOSFET DVR INV/NON 1.5A 8-DFN
|
Tape & Reel (TR) | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | Inverting，Non-Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | 1.5A，1.5A | ||
|
|
|
IXYS Integrated Circuits Division |
11,053
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR INV/NON 1.5A 8-DFN
|
Cut Tape (CT) | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | Inverting，Non-Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | 1.5A，1.5A | ||
|
|
|
IXYS Integrated Circuits Division |
11,053
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR INV/NON 1.5A 8-DFN
|
- | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | Inverting，Non-Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | 1.5A，1.5A | ||
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|
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC MOSFET DVR INV 1.5A 8-DFN
|
Tape & Reel (TR) | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | 1.5A，1.5A | ||
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|
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR INV 1.5A 8-DFN
|
Cut Tape (CT) | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | 1.5A，1.5A | ||
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|
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR INV 1.5A 8-DFN
|
- | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | 1.5A，1.5A | ||
|
|
ON Semiconductor |
18,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DRIVER DUAL 12V 8-DFN
|
Tape & Reel (TR) | 4.6 V ~ 13.2 V | -20°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | Inverting，Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 35V | 20ns，11ns | 0.8V，2V | - | |||
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ON Semiconductor |
20,482
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 12V 8-DFN
|
Cut Tape (CT) | 4.6 V ~ 13.2 V | -20°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | Inverting，Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 35V | 20ns，11ns | 0.8V，2V | - | |||
|
|
ON Semiconductor |
20,482
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 12V 8-DFN
|
- | 4.6 V ~ 13.2 V | -20°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | Inverting，Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 35V | 20ns，11ns | 0.8V，2V | - | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DRIVER DUAL 12V 8-DFN
|
Tape & Reel (TR) | 4.6 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | Inverting，Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 35V | 20ns，11ns | 0.8V，2V | - | |||
|
|
ON Semiconductor |
2,901
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 12V 8-DFN
|
Cut Tape (CT) | 4.6 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | Inverting，Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 35V | 20ns，11ns | 0.8V，2V | - | |||
|
|
ON Semiconductor |
2,901
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 12V 8-DFN
|
- | 4.6 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | Inverting，Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 35V | 20ns，11ns | 0.8V，2V | - | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DRIVER BUCK DUAL QFN
|
Tape & Reel (TR) | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 35V | 16ns，11ns | 1V，2V | - | |||
|
|
ON Semiconductor |
1,332
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER BUCK DUAL QFN
|
Cut Tape (CT) | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 35V | 16ns，11ns | 1V，2V | - | |||
|
|
ON Semiconductor |
1,332
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER BUCK DUAL QFN
|
- | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 35V | 16ns，11ns | 1V，2V | - | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DRIVER DUAL 12V 8-DFN
|
Tape & Reel (TR) | 4.6 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 35V | 16ns，11ns | 0.8V，2V | - |
