High Side Voltage - Max (Bootstrap):
Rise / Fall Time (Typ):
Logic Voltage - VIL, VIH:
Current - Peak Output (Source, Sink):
Découvrez les produits 8
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Package / Case Channel Type Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IRS2001MTRPBF
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16MLPQ
Tape & Reel (TR) 16-VFQFN Exposed Pad Independent IGBT,N-Channel MOSFET 200V 70ns,35ns 0.8V,2.5V 290mA,600mA
IRS21844MTRPBF
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
IC DRIVER HALF-BRIDGE 16MLPQ
Tape & Reel (TR) 16-VFQFN Exposed Pad,14 Leads Synchronous N-Channel MOSFET 600V 40ns,20ns 0.8V,2.5V 1.9A,2.3A
IRS2113MTRPBF
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16MLPQ
Tape & Reel (TR) 16-VFQFN Exposed Pad,14 Leads Independent IGBT,N-Channel MOSFET 600V 25ns,17ns 6V,9.5V 2.5A,2.5A
IRS21814MTRPBF
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16MLPQ
Tape & Reel (TR) 16-VFQFN Exposed Pad,14 Leads Independent N-Channel MOSFET 600V 40ns,20ns 0.8V,2.5V 1.9A,2.3A
IRS2001MPBF
Infineon Technologies
Enquête
-
-
MOQ: 368  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16MLPQ
Tube 16-VFQFN Exposed Pad Independent IGBT,N-Channel MOSFET 200V 70ns,35ns 0.8V,2.5V 290mA,600mA
IRS2113MPBF
Infineon Technologies
Enquête
-
-
MOQ: 368  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16MLPQ
Tube 16-VFQFN Exposed Pad,14 Leads Independent IGBT,N-Channel MOSFET 600V 25ns,17ns 6V,9.5V 2.5A,2.5A
IRS21814MPBF
Infineon Technologies
Enquête
-
-
MOQ: 273  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16MLPQ
Tube 16-VFQFN Exposed Pad,14 Leads Independent N-Channel MOSFET 600V 40ns,20ns 0.8V,2.5V 1.9A,2.3A
IRS21844MPBF
Infineon Technologies
Enquête
-
-
MOQ: 273  MPQ: 1
IC DRIVER HALF-BRIDGE 16MLPQ
Tube 16-VFQFN Exposed Pad,14 Leads Synchronous N-Channel MOSFET 600V 40ns,20ns 0.8V,2.5V 1.9A,2.3A