- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 792
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
IXYS Integrated Circuits Division |
10,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC MOSFET DVR INV/NON 1.5A 8-DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (3x3) | Surface Mount | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 10ns,8ns | 0.8V,2.4V | 1.5A,1.5A | ||||
IXYS Integrated Circuits Division |
11,053
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR INV/NON 1.5A 8-DFN
|
Cut Tape (CT) | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (3x3) | Surface Mount | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 10ns,8ns | 0.8V,2.4V | 1.5A,1.5A | ||||
IXYS Integrated Circuits Division |
11,053
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR INV/NON 1.5A 8-DFN
|
- | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (3x3) | Surface Mount | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 10ns,8ns | 0.8V,2.4V | 1.5A,1.5A | ||||
ON Semiconductor |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC BRIDGE DVR P-N 2A 30V 8-SOIC
|
Tape & Reel (TR) | - | 8 V ~ 27 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | N-Channel,P-Channel MOSFET | - | 21ns,8ns | 0.8V,2.25V | 1A,1.5A | ||||
ON Semiconductor |
12,102
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC BRIDGE DVR P-N 2A 30V 8-SOIC
|
Cut Tape (CT) | - | 8 V ~ 27 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | N-Channel,P-Channel MOSFET | - | 21ns,8ns | 0.8V,2.25V | 1A,1.5A | ||||
ON Semiconductor |
12,102
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC BRIDGE DVR P-N 2A 30V 8-SOIC
|
- | - | 8 V ~ 27 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | N-Channel,P-Channel MOSFET | - | 21ns,8ns | 0.8V,2.25V | 1A,1.5A | ||||
Texas Instruments |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DUAL HS MOSFET DRVR 8-SOIC
|
Tape & Reel (TR) | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Low-Side | N-Channel,P-Channel MOSFET | - | 14ns,15ns | 1V,4V | 2A,2A | ||||
Texas Instruments |
7,973
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HS MOSFET DRVR 8-SOIC
|
Cut Tape (CT) | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Low-Side | N-Channel,P-Channel MOSFET | - | 14ns,15ns | 1V,4V | 2A,2A | ||||
Texas Instruments |
7,973
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HS MOSFET DRVR 8-SOIC
|
- | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Low-Side | N-Channel,P-Channel MOSFET | - | 14ns,15ns | 1V,4V | 2A,2A | ||||
Infineon Technologies |
12,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRIDGE 600V 8SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 100ns,50ns | 0.8V,3V | 210mA,360mA | ||||
Infineon Technologies |
14,090
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 600V 8SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 100ns,50ns | 0.8V,3V | 210mA,360mA | ||||
Infineon Technologies |
14,090
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 600V 8SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 100ns,50ns | 0.8V,3V | 210mA,360mA | ||||
Texas Instruments |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF-BRIDGE HV 8-SOIC
|
Tape & Reel (TR) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | N-Channel MOSFET | 118V | 600ns,600ns | 0.8V,2.2V | 1.6A,1.6A | ||||
Texas Instruments |
7,131
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE HV 8-SOIC
|
Cut Tape (CT) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | N-Channel MOSFET | 118V | 600ns,600ns | 0.8V,2.2V | 1.6A,1.6A | ||||
Texas Instruments |
7,131
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE HV 8-SOIC
|
- | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | N-Channel MOSFET | 118V | 600ns,600ns | 0.8V,2.2V | 1.6A,1.6A | ||||
Infineon Technologies |
27,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.7V | 1.9A,2.3A | ||||
Infineon Technologies |
28,842
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.7V | 1.9A,2.3A | ||||
Infineon Technologies |
28,842
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.7V | 1.9A,2.3A | ||||
Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRIDGE 14SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Surface Mount | Independent | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.7V | 1.9A,2.3A | ||||
Infineon Technologies |
9,262
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 14SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Surface Mount | Independent | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.7V | 1.9A,2.3A |