- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 83
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF-BRDG SELF OSC 8SOIC
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 10 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | RC Input Circuit | Synchronous | Half-Bridge | N-Channel MOSFET | 40ns，20ns | - | 1A，1A | ||
|
|
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Infineon Technologies |
4,410
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRDG SELF OSC 8SOIC
|
Cut Tape (CT) | Automotive，AEC-Q100 | 10 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | RC Input Circuit | Synchronous | Half-Bridge | N-Channel MOSFET | 40ns，20ns | - | 1A，1A | ||
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|
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Infineon Technologies |
4,410
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRDG SELF OSC 8SOIC
|
- | Automotive，AEC-Q100 | 10 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | RC Input Circuit | Synchronous | Half-Bridge | N-Channel MOSFET | 40ns，20ns | - | 1A，1A | ||
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|
|
pSemi |
500
|
3 jours |
-
|
MOQ: 500 MPQ: 1
|
HIGH-SPEED FET DRIVER 33 MHZ
|
Tape & Reel (TR) | - | 4 V ~ 5.5 V | -40°C ~ 125°C (TJ) | Die | Die | - | Synchronous | Half-Bridge | N-Channel MOSFET | 2.5ns，2.5ns | - | 2A，4A | ||
|
|
|
pSemi |
615
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HIGH-SPEED FET DRIVER 33 MHZ
|
Cut Tape (CT) | - | 4 V ~ 5.5 V | -40°C ~ 125°C (TJ) | Die | Die | - | Synchronous | Half-Bridge | N-Channel MOSFET | 2.5ns，2.5ns | - | 2A，4A | ||
|
|
|
pSemi |
615
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HIGH-SPEED FET DRIVER 33 MHZ
|
- | - | 4 V ~ 5.5 V | -40°C ~ 125°C (TJ) | Die | Die | - | Synchronous | Half-Bridge | N-Channel MOSFET | 2.5ns，2.5ns | - | 2A，4A | ||
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Texas Instruments |
502
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC HALF-BRIDGE GATE DRVR 10WSON
|
Tape & Reel (TR) | - | 7 V ~ 17 V | -40°C ~ 140°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 7.8ns，6ns | 1.2V，2.55V | 4A，4A | ||
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|
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Texas Instruments |
1,587
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF-BRIDGE GATE DRVR 10WSON
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Cut Tape (CT) | - | 7 V ~ 17 V | -40°C ~ 140°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 7.8ns，6ns | 1.2V，2.55V | 4A，4A | ||
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|
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Texas Instruments |
1,587
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF-BRIDGE GATE DRVR 10WSON
|
- | - | 7 V ~ 17 V | -40°C ~ 140°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 7.8ns，6ns | 1.2V，2.55V | 4A，4A | ||
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|
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Texas Instruments |
1,358
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI/LO SIDE 3A 8SOIC
|
Tube | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 430ns，260ns | 2.3V，- | 3A，3A | ||
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|
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Renesas Electronics America Inc. |
3,173
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 100V 1.25A 9-DFN
|
Tube | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 9-VFDFN Exposed Pad | 9-DFN-EP (3x3) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 16ns，16ns | 1.4V，2.2V | 1.25A，1.25A | ||
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Texas Instruments |
250
|
3 jours |
-
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MOQ: 250 MPQ: 1
|
LMG1205YFXT
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Tape & Reel (TR) | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 12-WFBGA，DSBGA | 12-DSBGA | TTL | Independent | Half-Bridge | N-Channel MOSFET | 7ns，3.5ns | - | 1.2A，5A | ||
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|
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Texas Instruments |
695
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
LMG1205YFXT
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Cut Tape (CT) | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 12-WFBGA，DSBGA | 12-DSBGA | TTL | Independent | Half-Bridge | N-Channel MOSFET | 7ns，3.5ns | - | 1.2A，5A | ||
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|
|
Texas Instruments |
695
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
LMG1205YFXT
|
- | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 12-WFBGA，DSBGA | 12-DSBGA | TTL | Independent | Half-Bridge | N-Channel MOSFET | 7ns，3.5ns | - | 1.2A，5A | ||
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Diodes Incorporated |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
|
IC GATE DVR HV 10-WDFN
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Non-Inverting | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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|
|
Diodes Incorporated |
2,647
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HV 10-WDFN
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Non-Inverting | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
2,647
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HV 10-WDFN
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Non-Inverting | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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|
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Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER
|
Tape & Reel (TR) | - | 9 V ~ 16 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 12ns，9ns | 1V，2.4V | 2.5A，2.5A | ||
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|
|
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC GATE DRIVER
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-QFN (3x3) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 12ns，9ns | 1V，2.4V | 2.5A，2.5A | ||
|
|
|
Renesas Electronics America Inc. |
825
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR H-BRDG 100V 1.25A 8SOIC
|
Tube | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 16ns，16ns | 3.7V，7.4V | 1.25A，1.25A |
