- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 20
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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|
|
Renesas Electronics America Inc. |
2,481
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MSFT DVR HALF-BRG 100V 8-SOIC
|
Tube | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Independent | 114V | 9ns，7.5ns | 1.4V，2.2V | ||
|
|
|
Renesas Electronics America Inc. |
963
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MSFT DVR HALF-BRG 100V 10TDFN
|
Tube | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-TDFN (4x4) | Independent | 114V | 9ns，7.5ns | 1.4V，2.2V | ||
|
|
|
Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
|
Tape & Reel (TR) | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Synchronous | 35V | 21ns，18ns | 0.8V，1V | ||
|
|
|
Infineon Technologies |
5,859
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
|
Cut Tape (CT) | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Synchronous | 35V | 21ns，18ns | 0.8V，1V | ||
|
|
|
Infineon Technologies |
5,859
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
|
- | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Synchronous | 35V | 21ns，18ns | 0.8V，1V | ||
|
|
|
Renesas Electronics America Inc. |
871
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MSFT DVR HALF-BRG 100V 8-SOIC
|
Tube | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Independent | 114V | 9ns，7.5ns | 3.7V，7.4V | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC MSFT DVR HALF-BRG 100V 10TDFN
|
Tape & Reel (TR) | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-TDFN (4x4) | Independent | 114V | 9ns，7.5ns | 1.4V，2.2V | ||
|
|
|
Renesas Electronics America Inc. |
6,215
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MSFT DVR HALF-BRG 100V 10TDFN
|
Cut Tape (CT) | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-TDFN (4x4) | Independent | 114V | 9ns，7.5ns | 1.4V，2.2V | ||
|
|
|
Renesas Electronics America Inc. |
6,215
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MSFT DVR HALF-BRG 100V 10TDFN
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-TDFN (4x4) | Independent | 114V | 9ns，7.5ns | 1.4V，2.2V | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET GATE DRIVER 10DFN
|
Tape & Reel (TR) | 4.5 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Synchronous | - | - | - | ||
|
|
|
Infineon Technologies |
2,700
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET GATE DRIVER 10DFN
|
Cut Tape (CT) | 4.5 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Synchronous | - | - | - | ||
|
|
|
Infineon Technologies |
2,700
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET GATE DRIVER 10DFN
|
- | 4.5 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Synchronous | - | - | - | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC MSFT DVR HALF-BRG 100V 8-SOIC
|
Tape & Reel (TR) | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Independent | 114V | 9ns，7.5ns | 1.4V，2.2V | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC MSFT DVR HALF-BRG 100V 12-DFN
|
Tape & Reel (TR) | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 12-VFDFN Exposed Pad | 12-DFN (4x4) | Independent | 114V | 9ns，7.5ns | 1.4V，2.2V | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC MSFT DVR HALF-BRG 100V 8DFN
|
Tape & Reel (TR) | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (4x4) | Independent | 114V | 9ns，7.5ns | 1.4V，2.2V | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC MSFT DVR HALF-BRG 100V 8-SOIC
|
Tape & Reel (TR) | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Independent | 114V | 9ns，7.5ns | 3.7V，7.4V | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC MSFT DVR HALF-BRG 100V 12-DFN
|
Tape & Reel (TR) | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 12-VFDFN Exposed Pad | 12-DFN (4x4) | Independent | 114V | 9ns，7.5ns | 3.7V，7.4V | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 750 MPQ: 1
|
IC MSFT DVR HALF-BRG 100V 12-DFN
|
Tube | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 12-VFDFN Exposed Pad | 12-DFN (4x4) | Independent | 114V | 9ns，7.5ns | 1.4V，2.2V | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 750 MPQ: 1
|
IC MSFT DVR HALF-BRG 100V 8DFN
|
Tube | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (4x4) | Independent | 114V | 9ns，7.5ns | 1.4V，2.2V | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 750 MPQ: 1
|
IC MSFT DVR HALF-BRG 100V 12-DFN
|
Tube | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 12-VFDFN Exposed Pad | 12-DFN (4x4) | Independent | 114V | 9ns，7.5ns | 3.7V，7.4V |
