- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 451
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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IXYS Integrated Circuits Division |
42,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC MOSFET DVR NONINV 1.5A 8-DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (3x3) | Surface Mount | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | ||
|
|
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IXYS Integrated Circuits Division |
42,369
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR NONINV 1.5A 8-DFN
|
Cut Tape (CT) | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (3x3) | Surface Mount | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | ||
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|
|
IXYS Integrated Circuits Division |
42,369
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR NONINV 1.5A 8-DFN
|
- | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (3x3) | Surface Mount | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | ||
|
|
|
IXYS Integrated Circuits Division |
10,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC MOSFET DVR INV/NON 1.5A 8-DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (3x3) | Surface Mount | Inverting，Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | ||
|
|
|
IXYS Integrated Circuits Division |
11,053
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR INV/NON 1.5A 8-DFN
|
Cut Tape (CT) | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (3x3) | Surface Mount | Inverting，Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | ||
|
|
|
IXYS Integrated Circuits Division |
11,053
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR INV/NON 1.5A 8-DFN
|
- | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (3x3) | Surface Mount | Inverting，Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | ||
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|
|
IXYS Integrated Circuits Division |
8,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | ||
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|
|
IXYS Integrated Circuits Division |
9,070
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | ||
|
|
|
IXYS Integrated Circuits Division |
9,070
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
|
- | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | ||
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|
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Maxim Integrated |
952
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL 8-DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting，Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | ||
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|
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Texas Instruments |
2,637
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMPLEMENT PWR DRIVER 16-DIP
|
Tube | - | 5 V ~ 40 V | 0°C ~ 70°C (TA) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Through Hole | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | - | 40ns，40ns | 0.8V，2.2V | ||
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|
|
IXYS Integrated Circuits Division |
2,094
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
|
Tube | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | ||
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|
|
IXYS Integrated Circuits Division |
2,089
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
|
Tube | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | ||
|
|
|
Maxim Integrated |
363
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRV DUAL NONINV 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | ||
|
|
|
Maxim Integrated |
628
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL INV 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | ||
|
|
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Maxim Integrated |
506
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRV DUAL NONINV 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | ||
|
|
|
Maxim Integrated |
259
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL NONINV 8-DIP
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | ||
|
|
|
Texas Instruments |
657
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HS MOSFET DRIVER 16-DIP
|
Tube | - | 5 V ~ 40 V | 0°C ~ 70°C (TA) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Through Hole | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | - | 40ns，30ns | 0.8V，2.2V | ||
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|
|
Texas Instruments |
3,826
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC INVERTING MOSFET DRVR 8-DIP
|
Tube | - | 5 V ~ 40 V | -55°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.2V | ||
|
|
|
Maxim Integrated |
217
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR INV/NONINV 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V |
