- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 106
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR 2CH LOW SIDE 8MSOP
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | Non-Inverting | Independent | Low-Side | IGBT,N-Channel MOSFET | 7ns,6ns | 1V,2.3V | 5A,5A | ||||
Texas Instruments |
5,315
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 2CH LOW SIDE 8MSOP
|
Cut Tape (CT) | Automotive,AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | Non-Inverting | Independent | Low-Side | IGBT,N-Channel MOSFET | 7ns,6ns | 1V,2.3V | 5A,5A | ||||
Texas Instruments |
5,315
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 2CH LOW SIDE 8MSOP
|
- | Automotive,AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | Non-Inverting | Independent | Low-Side | IGBT,N-Channel MOSFET | 7ns,6ns | 1V,2.3V | 5A,5A | ||||
Analog Devices Inc. |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DVR 2A DL HS 8MSOP
|
Tape & Reel (TR) | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | Inverting | Independent | Low-Side | N-Channel MOSFET | 10ns,10ns | 0.8V,2V | 2A,2A | ||||
Analog Devices Inc. |
1,230
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 2A DL HS 8MSOP
|
Cut Tape (CT) | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | Inverting | Independent | Low-Side | N-Channel MOSFET | 10ns,10ns | 0.8V,2V | 2A,2A | ||||
Analog Devices Inc. |
1,230
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 2A DL HS 8MSOP
|
- | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | Inverting | Independent | Low-Side | N-Channel MOSFET | 10ns,10ns | 0.8V,2V | 2A,2A | ||||
Analog Devices Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DVR 2A DL HS 8MSOP
|
Tape & Reel (TR) | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | Inverting,Non-Inverting | Independent | Low-Side | N-Channel MOSFET | 10ns,10ns | 0.8V,2V | 2A,2A | ||||
Analog Devices Inc. |
900
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 2A DL HS 8MSOP
|
Cut Tape (CT) | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | Inverting,Non-Inverting | Independent | Low-Side | N-Channel MOSFET | 10ns,10ns | 0.8V,2V | 2A,2A | ||||
Analog Devices Inc. |
900
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 2A DL HS 8MSOP
|
- | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | Inverting,Non-Inverting | Independent | Low-Side | N-Channel MOSFET | 10ns,10ns | 0.8V,2V | 2A,2A | ||||
Analog Devices Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DVR 2A DL HS 8MSOP
|
Tape & Reel (TR) | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | 10ns,10ns | 0.8V,2V | 2A,2A | ||||
Analog Devices Inc. |
845
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 2A DL HS 8MSOP
|
Cut Tape (CT) | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | 10ns,10ns | 0.8V,2V | 2A,2A | ||||
Analog Devices Inc. |
845
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 2A DL HS 8MSOP
|
- | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | 10ns,10ns | 0.8V,2V | 2A,2A | ||||
Semtech Corporation |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 2A LOWSIDE 8MSOP
|
Tape & Reel (TR) | - | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | Inverting,Non-Inverting | Independent | Low-Side | N-Channel MOSFET | 20ns,20ns | 0.8V,2V | 2A,2A | ||||
Microchip Technology |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOSFET 1.5A DUAL 8MSOP
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | 20ns,29ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
2,959
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 1.5A DUAL 8MSOP
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | 20ns,29ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
2,959
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 1.5A DUAL 8MSOP
|
- | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | 20ns,29ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
2,484
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 1.5A DUAL 8MSOP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | Inverting,Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | 20ns,29ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOSFET 1.5A DUAL 8MSOP
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | Inverting,Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | 20ns,29ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
1,200
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
3.0A MATCHED,HIGH -SPEED,LOW-S
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | Inverting | Independent | High-Side | IGBT | 12ns,12ns | 0.8V,2V | 3A,3A | ||||
Microchip Technology |
1,200
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
3.0A MATCHED,HIGH -SPEED,LOW-S
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | Non-Inverting | Independent | High-Side | IGBT | 12ns,12ns | 0.8V,2V | 3A,3A |