Fabricant:
Voltage - Supply:
Driven Configuration:
High Side Voltage - Max (Bootstrap):
Rise / Fall Time (Typ):
Logic Voltage - VIL, VIH:
Current - Peak Output (Source, Sink):
Découvrez les produits 6
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Input Type Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
EL7243CM
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 114  MPQ: 1
IC CCD DRIVER DUAL HS 20-SOIC
Tube 4.5 V ~ 16 V -40°C ~ 125°C (TJ) Inverting,Non-Inverting Low-Side N-Channel,P-Channel MOSFET - 10ns,10ns (Max) 0.8V,2.4V 2A,2A
EL7243CM-T13
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC CCD DRIVER DUAL HS 20-SOIC
Tape & Reel (TR) 4.5 V ~ 16 V -40°C ~ 125°C (TJ) Inverting,Non-Inverting Low-Side N-Channel,P-Channel MOSFET - 10ns,10ns (Max) 0.8V,2.4V 2A,2A
EL7243CMZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 114  MPQ: 1
IC CCD DRIVER DUAL HS 20-SOIC
Tube 4.5 V ~ 16 V -40°C ~ 125°C (TJ) Inverting,Non-Inverting Low-Side N-Channel,P-Channel MOSFET - 10ns,10ns (Max) 0.8V,2.4V 2A,2A
EL7243CMZ-T13
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC CCD DRIVER DUAL HS 20-SOIC
Tape & Reel (TR) 4.5 V ~ 16 V -40°C ~ 125°C (TJ) Inverting,Non-Inverting Low-Side N-Channel,P-Channel MOSFET - 10ns,10ns (Max) 0.8V,2.4V 2A,2A
IRS21956SPBF
Infineon Technologies
Enquête
-
-
MOQ: 216  MPQ: 1
IC DVR HI SIDE/DUAL LOW 20-SOIC
Tube 10 V ~ 20 V -55°C ~ 150°C (TJ) Non-Inverting Half-Bridge IGBT,N-Channel MOSFET 600V 25ns,15ns 0.8V,3.5V 500mA,500mA
IRS21956STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DVR HI/LOW SIDE 600V 20SOIC
Tape & Reel (TR) 10 V ~ 20 V -55°C ~ 150°C (TJ) Non-Inverting Half-Bridge IGBT,N-Channel MOSFET 600V 25ns,15ns 0.8V,3.5V 500mA,500mA