Voltage - Supply:
Package / Case:
Supplier Device Package:
Rise / Fall Time (Typ):
Découvrez les produits 4,719
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
LM5111-1MY/NOPB
Texas Instruments
11,538
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER DUAL 5A 8-EMSOP
- - 3.5 V ~ 14 V -40°C ~ 125°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-PowerPad Surface Mount Non-Inverting Independent Low-Side N-Channel MOSFET - 14ns,12ns 0.8V,2.2V 3A,5A
TPS2814DR
Texas Instruments
7,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DUAL HS MOSFET DRVR 8-SOIC
Tape & Reel (TR) - 4 V ~ 14 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Synchronous Low-Side N-Channel,P-Channel MOSFET - 14ns,15ns 1V,4V 2A,2A
TPS2814DR
Texas Instruments
7,973
3 jours
-
MOQ: 1  MPQ: 1
IC DUAL HS MOSFET DRVR 8-SOIC
Cut Tape (CT) - 4 V ~ 14 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Synchronous Low-Side N-Channel,P-Channel MOSFET - 14ns,15ns 1V,4V 2A,2A
TPS2814DR
Texas Instruments
7,973
3 jours
-
MOQ: 1  MPQ: 1
IC DUAL HS MOSFET DRVR 8-SOIC
- - 4 V ~ 14 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Synchronous Low-Side N-Channel,P-Channel MOSFET - 14ns,15ns 1V,4V 2A,2A
UCC27524DSDR
Texas Instruments
24,000
3 jours
-
MOQ: 3000  MPQ: 1
IC GATE DVR LO-SIDE DL 5A 8SON
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 140°C (TJ) 8-WDFN Exposed Pad 8-SON (3x3) Surface Mount Non-Inverting Independent Low-Side IGBT,N-Channel MOSFET - 7ns,6ns 1V,2.3V 5A,5A
UCC27524DSDR
Texas Instruments
25,232
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LO-SIDE DL 5A 8SON
Cut Tape (CT) - 4.5 V ~ 18 V -40°C ~ 140°C (TJ) 8-WDFN Exposed Pad 8-SON (3x3) Surface Mount Non-Inverting Independent Low-Side IGBT,N-Channel MOSFET - 7ns,6ns 1V,2.3V 5A,5A
UCC27524DSDR
Texas Instruments
25,232
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LO-SIDE DL 5A 8SON
- - 4.5 V ~ 18 V -40°C ~ 140°C (TJ) 8-WDFN Exposed Pad 8-SON (3x3) Surface Mount Non-Inverting Independent Low-Side IGBT,N-Channel MOSFET - 7ns,6ns 1V,2.3V 5A,5A
UCC27524DR
Texas Instruments
12,500
3 jours
-
MOQ: 2500  MPQ: 1
IC GATE DVR LOSIDE DUAL 5A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 140°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side IGBT,N-Channel MOSFET - 7ns,6ns 1V,2.3V 5A,5A
UCC27524DR
Texas Instruments
18,225
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LOSIDE DUAL 5A 8SOIC
Cut Tape (CT) - 4.5 V ~ 18 V -40°C ~ 140°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side IGBT,N-Channel MOSFET - 7ns,6ns 1V,2.3V 5A,5A
UCC27524DR
Texas Instruments
18,225
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LOSIDE DUAL 5A 8SOIC
- - 4.5 V ~ 18 V -40°C ~ 140°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side IGBT,N-Channel MOSFET - 7ns,6ns 1V,2.3V 5A,5A
UCC27524DGNR
Texas Instruments
12,500
3 jours
-
MOQ: 2500  MPQ: 1
IC GATE DRVR LOW SIDE DL 8MSOP
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 140°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-PowerPad Surface Mount Non-Inverting Independent Low-Side IGBT,N-Channel MOSFET - 7ns,6ns 1V,2.3V 5A,5A
UCC27524DGNR
Texas Instruments
18,053
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR LOW SIDE DL 8MSOP
Cut Tape (CT) - 4.5 V ~ 18 V -40°C ~ 140°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-PowerPad Surface Mount Non-Inverting Independent Low-Side IGBT,N-Channel MOSFET - 7ns,6ns 1V,2.3V 5A,5A
UCC27524DGNR
Texas Instruments
18,053
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR LOW SIDE DL 8MSOP
- - 4.5 V ~ 18 V -40°C ~ 140°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-PowerPad Surface Mount Non-Inverting Independent Low-Side IGBT,N-Channel MOSFET - 7ns,6ns 1V,2.3V 5A,5A
IR2103STRPBF
Infineon Technologies
12,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER HALF BRIDGE 600V 8SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 100ns,50ns 0.8V,3V 210mA,360mA
IR2103STRPBF
Infineon Technologies
14,090
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HALF BRIDGE 600V 8SOIC
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 100ns,50ns 0.8V,3V 210mA,360mA
IR2103STRPBF
Infineon Technologies
14,090
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HALF BRIDGE 600V 8SOIC
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 100ns,50ns 0.8V,3V 210mA,360mA
IR2104STRPBF
Infineon Technologies
5,000
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous Half-Bridge IGBT,N-Channel MOSFET 600V 100ns,50ns 0.8V,3V 210mA,360mA
IR2104STRPBF
Infineon Technologies
6,895
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8SOIC
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous Half-Bridge IGBT,N-Channel MOSFET 600V 100ns,50ns 0.8V,3V 210mA,360mA
IR2104STRPBF
Infineon Technologies
6,895
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8SOIC
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous Half-Bridge IGBT,N-Channel MOSFET 600V 100ns,50ns 0.8V,3V 210mA,360mA
LM5106SD/NOPB
Texas Instruments
49,000
3 jours
-
MOQ: 1000  MPQ: 1
IC GATE DVR HALF BRIDGE 10WSON
Tape & Reel (TR) - 8 V ~ 14 V -40°C ~ 125°C (TJ) 10-WDFN Exposed Pad 10-WSON (4x4) Surface Mount Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 118V 15ns,10ns 0.8V,2.2V 1.2A,1.8A