Voltage - Supply:
Package / Case:
Supplier Device Package:
Rise / Fall Time (Typ):
Découvrez les produits 4,719
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
TPS28225DRBR
Texas Instruments
6,000
3 jours
-
MOQ: 3000  MPQ: 1
IC SYNC MOSFET DVR 4A 8SON
Tape & Reel (TR) - 4.5 V ~ 8.8 V -40°C ~ 125°C (TJ) 8-VDFN Exposed Pad 8-SON (3x3) Surface Mount Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 33V 10ns,10ns - 2A,2A
TPS28225DRBR
Texas Instruments
9,372
3 jours
-
MOQ: 1  MPQ: 1
IC SYNC MOSFET DVR 4A 8SON
Cut Tape (CT) - 4.5 V ~ 8.8 V -40°C ~ 125°C (TJ) 8-VDFN Exposed Pad 8-SON (3x3) Surface Mount Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 33V 10ns,10ns - 2A,2A
TPS28225DRBR
Texas Instruments
9,372
3 jours
-
MOQ: 1  MPQ: 1
IC SYNC MOSFET DVR 4A 8SON
- - 4.5 V ~ 8.8 V -40°C ~ 125°C (TJ) 8-VDFN Exposed Pad 8-SON (3x3) Surface Mount Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 33V 10ns,10ns - 2A,2A
IRS2308STRPBF
Infineon Technologies
10,000
3 jours
-
MOQ: 2500  MPQ: 1
IC DVR HALF BRIDGE 8-SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 100ns,35ns 0.8V,2.5V 290mA,600mA
IRS2308STRPBF
Infineon Technologies
12,190
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HALF BRIDGE 8-SOIC
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 100ns,35ns 0.8V,2.5V 290mA,600mA
IRS2308STRPBF
Infineon Technologies
12,190
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HALF BRIDGE 8-SOIC
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 100ns,35ns 0.8V,2.5V 290mA,600mA
L6388ED013TR
STMicroelectronics
7,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER HI/LO SIDE HV 8-SOIC
Tape & Reel (TR) - 17V (Max) -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 70ns,40ns 1.1V,1.8V 400mA,650mA
L6388ED013TR
STMicroelectronics
9,768
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE HV 8-SOIC
Cut Tape (CT) - 17V (Max) -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 70ns,40ns 1.1V,1.8V 400mA,650mA
L6388ED013TR
STMicroelectronics
9,768
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE HV 8-SOIC
- - 17V (Max) -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 70ns,40ns 1.1V,1.8V 400mA,650mA
IRS2101STRPBF
Infineon Technologies
10,000
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8-SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 290mA,600mA
IRS2101STRPBF
Infineon Technologies
11,887
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8-SOIC
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 290mA,600mA
IRS2101STRPBF
Infineon Technologies
11,887
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8-SOIC
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 290mA,600mA
IRS4427STRPBF
Infineon Technologies
7,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DVR LOW SIDE DUAL 8SOIC
Tape & Reel (TR) - 6 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side IGBT,N-Channel MOSFET - 25ns,25ns 0.8V,2.5V 2.3A,3.3A
IRS4427STRPBF
Infineon Technologies
9,600
3 jours
-
MOQ: 1  MPQ: 1
IC DVR LOW SIDE DUAL 8SOIC
Cut Tape (CT) - 6 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side IGBT,N-Channel MOSFET - 25ns,25ns 0.8V,2.5V 2.3A,3.3A
IRS4427STRPBF
Infineon Technologies
9,600
3 jours
-
MOQ: 1  MPQ: 1
IC DVR LOW SIDE DUAL 8SOIC
- - 6 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side IGBT,N-Channel MOSFET - 25ns,25ns 0.8V,2.5V 2.3A,3.3A
TPS51604DSGR
Texas Instruments
3,000
3 jours
-
MOQ: 3000  MPQ: 1
IC MOSFET DRVR SYNC 8WSON
Tape & Reel (TR) - 4.5 V ~ 5.5 V -40°C ~ 105°C (TJ) 8-WFDFN Exposed Pad 8-WSON (2x2) Surface Mount Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 34V 30ns,8ns 0.6V,2.65V -
TPS51604DSGR
Texas Instruments
6,116
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR SYNC 8WSON
Cut Tape (CT) - 4.5 V ~ 5.5 V -40°C ~ 105°C (TJ) 8-WFDFN Exposed Pad 8-WSON (2x2) Surface Mount Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 34V 30ns,8ns 0.6V,2.65V -
TPS51604DSGR
Texas Instruments
6,116
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR SYNC 8WSON
- - 4.5 V ~ 5.5 V -40°C ~ 105°C (TJ) 8-WFDFN Exposed Pad 8-WSON (2x2) Surface Mount Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 34V 30ns,8ns 0.6V,2.65V -
LM5111-1MY/NOPB
Texas Instruments
7,000
3 jours
-
MOQ: 1000  MPQ: 1
IC MOSFET DRIVER DUAL 5A 8-EMSOP
Tape & Reel (TR) - 3.5 V ~ 14 V -40°C ~ 125°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-PowerPad Surface Mount Non-Inverting Independent Low-Side N-Channel MOSFET - 14ns,12ns 0.8V,2.2V 3A,5A
LM5111-1MY/NOPB
Texas Instruments
11,538
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER DUAL 5A 8-EMSOP
Cut Tape (CT) - 3.5 V ~ 14 V -40°C ~ 125°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-PowerPad Surface Mount Non-Inverting Independent Low-Side N-Channel MOSFET - 14ns,12ns 0.8V,2.2V 3A,5A