- Fabricant:
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- Packaging:
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- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 4,719
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
5,859
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
|
Cut Tape (CT) | - | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 35V | 21ns,18ns | 0.8V,1V | 3A,4A | ||||
Infineon Technologies |
5,859
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
|
- | - | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 35V | 21ns,18ns | 0.8V,1V | 3A,4A | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET IGBT DRIVER 8SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 150ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
2,537
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET IGBT DRIVER 8SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 150ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
2,537
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET IGBT DRIVER 8SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 150ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8DSO
|
Tape & Reel (TR) | EiceDriver | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | PG-DSO-8 | Surface Mount | Non-Inverting | Independent | Half-Bridge | IGBT | 600V | 48ns,24ns | 1.1V,1.7V | 500mA,500mA | ||||
Infineon Technologies |
10,174
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8DSO
|
Cut Tape (CT) | EiceDriver | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | PG-DSO-8 | Surface Mount | Non-Inverting | Independent | Half-Bridge | IGBT | 600V | 48ns,24ns | 1.1V,1.7V | 500mA,500mA | ||||
Infineon Technologies |
10,174
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8DSO
|
- | EiceDriver | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | PG-DSO-8 | Surface Mount | Non-Inverting | Independent | Half-Bridge | IGBT | 600V | 48ns,24ns | 1.1V,1.7V | 500mA,500mA | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 200ns,100ns | 0.8V,2.3V | 60mA,130mA | ||||
Infineon Technologies |
3,257
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 200ns,100ns | 0.8V,2.3V | 60mA,130mA | ||||
Infineon Technologies |
3,257
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 200ns,100ns | 0.8V,2.3V | 60mA,130mA | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 8DSO
|
Tape & Reel (TR) | EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | PG-DSO-8 | Surface Mount | Inverting | Independent | Low-Side | N-Channel MOSFET | - | 5.3ns,4.5ns | 1.2V,1.9V | 5A,5A | ||||
Infineon Technologies |
4,909
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 8DSO
|
Cut Tape (CT) | EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | PG-DSO-8 | Surface Mount | Inverting | Independent | Low-Side | N-Channel MOSFET | - | 5.3ns,4.5ns | 1.2V,1.9V | 5A,5A | ||||
Infineon Technologies |
4,909
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 8DSO
|
- | EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | PG-DSO-8 | Surface Mount | Inverting | Independent | Low-Side | N-Channel MOSFET | - | 5.3ns,4.5ns | 1.2V,1.9V | 5A,5A | ||||
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR BRDG 60V .25A DSO14
|
Tape & Reel (TR) | EiceDriver | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | PG-DSO-14 | Surface Mount | Non-Inverting | Independent | Half-Bridge | N-Channel,P-Channel MOSFET | 600V | 48ns,24ns | 1.1V,1.7V | 250mA,500mA | ||||
Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR BRDG 60V .25A DSO14
|
Cut Tape (CT) | EiceDriver | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | PG-DSO-14 | Surface Mount | Non-Inverting | Independent | Half-Bridge | N-Channel,P-Channel MOSFET | 600V | 48ns,24ns | 1.1V,1.7V | 250mA,500mA | ||||
Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR BRDG 60V .25A DSO14
|
- | EiceDriver | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | PG-DSO-14 | Surface Mount | Non-Inverting | Independent | Half-Bridge | N-Channel,P-Channel MOSFET | 600V | 48ns,24ns | 1.1V,1.7V | 250mA,500mA | ||||
Texas Instruments |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DRVR SYNC DUAL 8SON
|
Tape & Reel (TR) | - | 4.5 V ~ 5.5 V | -40°C ~ 105°C (TJ) | 8-VDFN Exposed Pad | 8-SON (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | - | 15ns,10ns | 0.7V,4V | - | ||||
Texas Instruments |
8,914
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SYNC DUAL 8SON
|
Cut Tape (CT) | - | 4.5 V ~ 5.5 V | -40°C ~ 105°C (TJ) | 8-VDFN Exposed Pad | 8-SON (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | - | 15ns,10ns | 0.7V,4V | - | ||||
Texas Instruments |
8,914
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SYNC DUAL 8SON
|
- | - | 4.5 V ~ 5.5 V | -40°C ~ 105°C (TJ) | 8-VDFN Exposed Pad | 8-SON (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | - | 15ns,10ns | 0.7V,4V | - |