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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 4,719
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
195
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF BRIDGE 8DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting，Non-Inverting | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
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Texas Instruments |
3,470
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DVR HIGH/LOW SIDE 4A 8SOIC
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Tube | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 120V | 7.2ns，5.5ns | 1.3V，2.7V | 4A，4A | ||
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Texas Instruments |
3,062
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DVR HIGH/LOW SIDE 4A 8SOPWR
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Tube | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154"，3.90mm Width) | 8-SO PowerPad | Surface Mount | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 120V | 7.2ns，5.5ns | 1.3V，2.8V | 4A，4A | ||
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Renesas Electronics America Inc. |
2,481
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MSFT DVR HALF-BRG 100V 8-SOIC
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Tube | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 114V | 9ns，7.5ns | 1.4V，2.2V | 3A，4A | ||
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Renesas Electronics America Inc. |
963
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MSFT DVR HALF-BRG 100V 10TDFN
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Tube | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-TDFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 114V | 9ns，7.5ns | 1.4V，2.2V | 3A，4A | ||
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Infineon Technologies |
1,792
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR HI/LO SIDE 14-DIP
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Tube | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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Infineon Technologies |
1,498
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR HI/LO SIDE 16SOIC
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Tube | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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Maxim Integrated |
1,523
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET DUAL 8-DIP
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
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Maxim Integrated |
392
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSF DRVR HALF BRDG HS 8-SOIC
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Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting，Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 125V | 50ns，40ns | 0.8V，2V | 3A，3A | ||
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Renesas Electronics America Inc. |
4,488
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MONO PIN DVR HS 8-SOIC
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Tube | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | High-Side or Low-Side | IGBT，N-Channel MOSFET | - | 4ns，4ns | 0.6V，2.4V | 4A，4A | ||
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Infineon Technologies |
1,168
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 24-SSOP
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Tube | - | 11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 24-SSOP (0.209"，5.30mm Width) | 24-SSOP | Surface Mount | Non-Inverting | Independent | Half-Bridge | IGBT | 600V | 24ns，7ns | 0.8V，2V | 2A，3A | ||
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Infineon Technologies |
4,205
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF BRIDGE SGL 24SSOP
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Tube | - | 11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 24-SSOP (0.209"，5.30mm Width) | 24-SSOP | Surface Mount | Non-Inverting | Independent | Half-Bridge | IGBT | 1200V | 24ns，7ns | 0.8V，2V | 2A，3A | ||
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Maxim Integrated |
184
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET 8-SOIC
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Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 175V | 65ns，65ns | 0.8V，2V | 2A，2A | ||
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Texas Instruments |
657
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC HS MOSFET DRIVER 16-DIP
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Tube | - | 5 V ~ 40 V | 0°C ~ 70°C (TA) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 40ns，30ns | 0.8V，2.2V | 1.5A，1.5A | ||
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Texas Instruments |
3,826
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC INVERTING MOSFET DRVR 8-DIP
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Tube | - | 5 V ~ 40 V | -55°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.2V | 1.5A，1.5A | ||
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Power Integrations |
122
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL GATE DRIVER 15A
|
Tray | SCALE-2 | 14.5 V ~ 15.5 V | -40°C ~ 105°C (TA) | Module | Module | Surface Mount | - | Independent | High-Side or Low-Side | IGBT | 1200V | 6ns，12ns | - | 15A，15A | ||
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Power Integrations |
299
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL GATE DRIVER 8A
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Tray | SCALE-2 | 14.5 V ~ 15.5 V | -40°C ~ 85°C (TA) | Module | Module | Surface Mount | - | Independent | High-Side or Low-Side | IGBT | 1700V | 17ns，15ns | - | 8A，8A | ||
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|
|
Power Integrations |
130
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL GATE DRIVER
|
Tray | SCALE-2 | 14.5 V ~ 15.5 V | -20°C ~ 85°C (TA) | Module | Module | Surface Mount | - | Independent | Half-Bridge | IGBT | 1200V | 5ns，10ns | - | 8A，15A | ||
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|
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Power Integrations |
107
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL GATE DRIVER 6A
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Tray | SCALE-1 | 15V | -40°C ~ 85°C (TA) | Module | Module | Surface Mount | - | - | Half-Bridge | IGBT，N-Channel，P-Channel MOSFET | - | 100ns，80ns | - | 6A，6A | ||
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|
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Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
|
Tape & Reel (TR) | - | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 35V | 21ns，18ns | 0.8V，1V | 3A，4A |
