Voltage - Supply:
Package / Case:
Supplier Device Package:
Rise / Fall Time (Typ):
Découvrez les produits 4,719
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IRS21844SPBF
Infineon Technologies
1,664
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HALF-BRIDGE 14-SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 14-SOIC (0.154",3.90mm Width) 14-SOIC Surface Mount Non-Inverting Synchronous Half-Bridge IGBT,N-Channel MOSFET 600V 40ns,20ns 0.8V,2.5V 1.9A,2.3A
IRS21864SPBF
Infineon Technologies
1,322
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE 600V 14SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 14-SOIC (0.154",3.90mm Width) 14-SOIC Surface Mount Non-Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 22ns,18ns 0.8V,2.5V 4A,4A
MAX4427ESA+
Maxim Integrated
506
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRV DUAL NONINV 8-SOIC
Tube - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side N-Channel,P-Channel MOSFET - 20ns,20ns 0.8V,2.4V 1.5A,1.5A
LM5101BMA/NOPB
Texas Instruments
6,421
3 jours
-
MOQ: 1  MPQ: 1
IC DRVR HALF BRDG 100V 2A 8-SOIC
Tube - 9 V ~ 14 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge N-Channel MOSFET 118V 570ns,430ns 2.3V,- 2A,2A
LM5104M/NOPB
Texas Instruments
7,548
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HALF-BRIDGE HV 8-SOIC
Tube - 9 V ~ 14 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 118V 600ns,600ns 0.8V,2.2V 1.6A,1.6A
LM5113SDE/NOPB
Texas Instruments
750
3 jours
-
MOQ: 250  MPQ: 1
IC GATE DRIVER HALF BRIDGE 10SON
Tape & Reel (TR) - 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 10-WDFN Exposed Pad 10-WSON (4x4) Surface Mount Non-Inverting Independent Half-Bridge N-Channel MOSFET 107V 7ns,1.5ns 1.76V,1.89V 1.2A,5A
LM5113SDE/NOPB
Texas Instruments
889
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER HALF BRIDGE 10SON
Cut Tape (CT) - 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 10-WDFN Exposed Pad 10-WSON (4x4) Surface Mount Non-Inverting Independent Half-Bridge N-Channel MOSFET 107V 7ns,1.5ns 1.76V,1.89V 1.2A,5A
LM5113SDE/NOPB
Texas Instruments
889
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER HALF BRIDGE 10SON
- - 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 10-WDFN Exposed Pad 10-WSON (4x4) Surface Mount Non-Inverting Independent Half-Bridge N-Channel MOSFET 107V 7ns,1.5ns 1.76V,1.89V 1.2A,5A
IRS2184PBF
Infineon Technologies
2,868
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HALF BRIDGE 8-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Synchronous Half-Bridge IGBT,N-Channel MOSFET 600V 40ns,20ns 0.8V,2.5V 1.9A,2.3A
IR2010SPBF
Infineon Technologies
1,538
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Non-Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 200V 10ns,15ns 6V,9.5V 3A,3A
LM5101AM/NOPB
Texas Instruments
3,752
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HALF-BRIDGE HV 8-SOIC
Tube - 9 V ~ 14 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge N-Channel MOSFET 118V 430ns,260ns 2.3V,- 3A,3A
IR2112PBF
Infineon Technologies
1,434
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR HI/LO SIDE 14-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm) 14-DIP Through Hole Non-Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 80ns,40ns 6V,9.5V 250mA,500mA
IR2112SPBF
Infineon Technologies
602
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR HI/LO SIDE 16SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Non-Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 80ns,40ns 6V,9.5V 250mA,500mA
IR2184PBF
Infineon Technologies
1,169
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 40ns,20ns 0.8V,2.7V 1.9A,2.3A
IR2184SPBF
Infineon Technologies
427
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 40ns,20ns 0.8V,2.7V 1.9A,2.3A
IR2011PBF
Infineon Technologies
2,599
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting Independent Half-Bridge N-Channel MOSFET 200V 35ns,20ns 0.7V,2.2V 1A,1A
IR2302PBF
Infineon Technologies
2,050
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HALF BRIDGE 8DIP
Tube - 5 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Synchronous Half-Bridge IGBT,N-Channel MOSFET 600V 130ns,50ns 0.8V,2.9V 200mA,350mA
MAX4427CPA+
Maxim Integrated
259
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR DUAL NONINV 8-DIP
Tube - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Independent Low-Side N-Channel,P-Channel MOSFET - 20ns,20ns 0.8V,2.4V 1.5A,1.5A
IR2010PBF
Infineon Technologies
1,189
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 14DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm) 14-DIP Through Hole Non-Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 200V 10ns,15ns 6V,9.5V 3A,3A
IR21844SPBF
Infineon Technologies
1,924
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 14SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 14-SOIC (0.154",3.90mm Width) 14-SOIC Surface Mount Non-Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 40ns,20ns 0.8V,2.7V 1.9A,2.3A