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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 4,719
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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IXYS Integrated Circuits Division |
2,092
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A INV 8-SOIC
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS Integrated Circuits Division |
1,461
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A DUAL NONINV 8DIP
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm)，6 Leads | 8-DIP | Through Hole | Non-Inverting | Independent | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS Integrated Circuits Division |
1,002
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A DIFF 8-SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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Texas Instruments |
3,966
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER DUAL 5A 8-SOIC
|
Tube | - | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | N-Channel MOSFET | - | 14ns，12ns | 0.8V，2.2V | 3A，5A | ||
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Texas Instruments |
1,373
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER DUAL 5A 8-SOIC
|
Tube | - | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 14ns，12ns | 0.8V，2.2V | 3A，5A | ||
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Maxim Integrated |
1,316
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8SOIC
|
Tube | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 40ns，25ns | 0.8V，2.1V | 4A，4A | ||
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Texas Instruments |
1,510
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DVR HALF-BRIDGE 100V 1A 8SOIC
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Tube | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 118V | 15ns，15ns | 0.8V，2.2V | 1A，1A | ||
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Infineon Technologies |
2,000
|
3 jours |
-
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MOQ: 1000 MPQ: 1
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IC MOSFET DRVR HI/LO SIDE 16SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
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Infineon Technologies |
2,308
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
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Infineon Technologies |
2,308
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
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Texas Instruments |
2,858
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8-SOIC
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Tube | - | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 33V | 10ns，10ns | - | - | ||
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Infineon Technologies |
11,772
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Infineon Technologies |
8,526
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.5V | 1.9A，2.3A | ||
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Infineon Technologies |
2,998
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 600V 8DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting，Non-Inverting | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
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Texas Instruments |
2,876
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
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|
|
Infineon Technologies |
3,476
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LOW SIDE 8-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Half-Bridge | N-Channel MOSFET | 200V | 25ns，15ns | 0.8V，2.7V | 1A，1A | ||
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|
|
Infineon Technologies |
1,309
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
|
|
|
Infineon Technologies |
1,038
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER DUAL LOW SIDE 8SOIC
|
Tube | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 15ns，10ns | 0.8V，2.7V | 2.3A，3.3A | ||
|
|
|
Infineon Technologies |
4,355
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRIDGE DRIVER 8-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Texas Instruments |
3,669
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HS FET DRIVER 8-SOIC
|
Tube | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Low-Side | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A |
