Voltage - Supply:
Package / Case:
Supplier Device Package:
Rise / Fall Time (Typ):
Découvrez les produits 4,719
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
ADP3629ARZ-R7
Analog Devices Inc.
22,877
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 2A DL HS 8SOIC
Cut Tape (CT) - 9.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Low-Side N-Channel MOSFET - 10ns,10ns 0.8V,2V 2A,2A
ADP3629ARZ-R7
Analog Devices Inc.
22,877
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 2A DL HS 8SOIC
- - 9.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Low-Side N-Channel MOSFET - 10ns,10ns 0.8V,2V 2A,2A
TPS28225DRBT
Texas Instruments
3,000
3 jours
-
MOQ: 250  MPQ: 1
IC SYNC MOSFET DVR 4A 8SON
Tape & Reel (TR) - 4.5 V ~ 8.8 V -40°C ~ 125°C (TJ) 8-VDFN Exposed Pad 8-SON (3x3) Surface Mount Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 33V 10ns,10ns - -
TPS28225DRBT
Texas Instruments
6,729
3 jours
-
MOQ: 1  MPQ: 1
IC SYNC MOSFET DVR 4A 8SON
Cut Tape (CT) - 4.5 V ~ 8.8 V -40°C ~ 125°C (TJ) 8-VDFN Exposed Pad 8-SON (3x3) Surface Mount Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 33V 10ns,10ns - -
TPS28225DRBT
Texas Instruments
6,729
3 jours
-
MOQ: 1  MPQ: 1
IC SYNC MOSFET DVR 4A 8SON
- - 4.5 V ~ 8.8 V -40°C ~ 125°C (TJ) 8-VDFN Exposed Pad 8-SON (3x3) Surface Mount Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 33V 10ns,10ns - -
LM5102SD/NOPB
Texas Instruments
3,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DVR HALF-BRIDGE HV 10WSON
Tape & Reel (TR) - 9 V ~ 14 V -40°C ~ 125°C (TJ) 10-WDFN Exposed Pad 10-WSON (4x4) Surface Mount Non-Inverting Independent Half-Bridge N-Channel MOSFET 118V 600ns,600ns 0.8V,2.2V 1.6A,1.6A
LM5102SD/NOPB
Texas Instruments
5,544
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HALF-BRIDGE HV 10WSON
Cut Tape (CT) - 9 V ~ 14 V -40°C ~ 125°C (TJ) 10-WDFN Exposed Pad 10-WSON (4x4) Surface Mount Non-Inverting Independent Half-Bridge N-Channel MOSFET 118V 600ns,600ns 0.8V,2.2V 1.6A,1.6A
LM5102SD/NOPB
Texas Instruments
5,544
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HALF-BRIDGE HV 10WSON
- - 9 V ~ 14 V -40°C ~ 125°C (TJ) 10-WDFN Exposed Pad 10-WSON (4x4) Surface Mount Non-Inverting Independent Half-Bridge N-Channel MOSFET 118V 600ns,600ns 0.8V,2.2V 1.6A,1.6A
IR2111STRPBF
Infineon Technologies
10,000
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER HALF BRIDGE 8SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous Half-Bridge IGBT,N-Channel MOSFET 600V 80ns,40ns 8.3V,12.6V 250mA,500mA
IR2111STRPBF
Infineon Technologies
11,376
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HALF BRIDGE 8SOIC
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous Half-Bridge IGBT,N-Channel MOSFET 600V 80ns,40ns 8.3V,12.6V 250mA,500mA
IR2111STRPBF
Infineon Technologies
11,376
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HALF BRIDGE 8SOIC
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous Half-Bridge IGBT,N-Channel MOSFET 600V 80ns,40ns 8.3V,12.6V 250mA,500mA
TPS51604DSGT
Texas Instruments
1,500
3 jours
-
MOQ: 250  MPQ: 1
IC MOSFET DRVR SYNC 8WSON
Tape & Reel (TR) - 4.5 V ~ 5.5 V -40°C ~ 105°C (TJ) 8-WFDFN Exposed Pad 8-WSON (2x2) Surface Mount Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 34V 30ns,8ns 0.6V,2.65V -
TPS51604DSGT
Texas Instruments
3,775
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR SYNC 8WSON
Cut Tape (CT) - 4.5 V ~ 5.5 V -40°C ~ 105°C (TJ) 8-WFDFN Exposed Pad 8-WSON (2x2) Surface Mount Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 34V 30ns,8ns 0.6V,2.65V -
TPS51604DSGT
Texas Instruments
3,775
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR SYNC 8WSON
- - 4.5 V ~ 5.5 V -40°C ~ 105°C (TJ) 8-WFDFN Exposed Pad 8-WSON (2x2) Surface Mount Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 34V 30ns,8ns 0.6V,2.65V -
ADP3623ARHZ-RL
Analog Devices Inc.
3,000
3 jours
-
MOQ: 3000  MPQ: 1
IC MOSFET DVR 4A DL HS 8MSOP
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-EP Surface Mount Inverting Independent Low-Side N-Channel MOSFET - 10ns,10ns 0.8V,2V 4A,4A
ADP3623ARHZ-RL
Analog Devices Inc.
4,462
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 4A DL HS 8MSOP
Cut Tape (CT) - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-EP Surface Mount Inverting Independent Low-Side N-Channel MOSFET - 10ns,10ns 0.8V,2V 4A,4A
ADP3623ARHZ-RL
Analog Devices Inc.
4,462
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 4A DL HS 8MSOP
- - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-EP Surface Mount Inverting Independent Low-Side N-Channel MOSFET - 10ns,10ns 0.8V,2V 4A,4A
IXDN602SIA
IXYS Integrated Circuits Division
4,958
3 jours
-
MOQ: 1  MPQ: 1
DUAL LOW SIDE MOSFET DRIVER
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side IGBT,N-Channel,P-Channel MOSFET - 7.5ns,6.5ns 0.8V,3V 2A,2A
IXDI602SIA
IXYS Integrated Circuits Division
1,297
3 jours
-
MOQ: 1  MPQ: 1
MOSFET N-CH 2A DUAL LO SIDE 8-SO
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Low-Side IGBT,N-Channel,P-Channel MOSFET - 7.5ns,6.5ns 0.8V,3V 2A,2A
LM5104SD/NOPB
Texas Instruments
4,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DVR HALF-BRIDGE HV 10WSON
Tape & Reel (TR) - 9 V ~ 14 V -40°C ~ 125°C (TJ) 10-WDFN Exposed Pad 10-WSON (4x4) Surface Mount Inverting,Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 118V 600ns,600ns 0.8V,2.2V 1.6A,1.6A