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- Packaging:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 4,719
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
3,198
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 600V 8-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 22ns,18ns | 0.8V,2.5V | 4A,4A | ||||
Texas Instruments |
20,500
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8VSON
|
Tape & Reel (TR) | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-VDFN Exposed Pad | 8-VSON (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 120V | 7.2ns,5.5ns | 1.3V,2.7V | 4A,4A | ||||
Texas Instruments |
23,901
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8VSON
|
Cut Tape (CT) | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-VDFN Exposed Pad | 8-VSON (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 120V | 7.2ns,5.5ns | 1.3V,2.7V | 4A,4A | ||||
Texas Instruments |
23,901
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8VSON
|
- | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-VDFN Exposed Pad | 8-VSON (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 120V | 7.2ns,5.5ns | 1.3V,2.7V | 4A,4A | ||||
Texas Instruments |
7,750
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8VSON
|
Tape & Reel (TR) | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-VDFN Exposed Pad | 8-VSON (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 120V | 7.2ns,5.5ns | 1.3V,2.7V | 4A,4A | ||||
Texas Instruments |
10,421
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8VSON
|
Cut Tape (CT) | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-VDFN Exposed Pad | 8-VSON (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 120V | 7.2ns,5.5ns | 1.3V,2.7V | 4A,4A | ||||
Texas Instruments |
10,421
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8VSON
|
- | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-VDFN Exposed Pad | 8-VSON (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 120V | 7.2ns,5.5ns | 1.3V,2.7V | 4A,4A | ||||
Texas Instruments |
4,778
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL MOSFET DRIVER 8-DIP
|
Tube | - | 4.75 V ~ 5.25 V,4.75 V ~ 24 V | 0°C ~ 70°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Synchronous | Low-Side | N-Channel MOSFET | - | - | 0.8V,2V | 500mA,500mA | ||||
Maxim Integrated |
1,238
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR MOSFET DUAL NON-INV 8SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | N-Channel,P-Channel MOSFET | - | 25ns,20ns | 0.8V,2.4V | 2A,2A | ||||
IXYS Integrated Circuits Division |
4,679
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A DUAL NONINV 8SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Low-Side | IGBT,N-Channel,P-Channel MOSFET | - | 9ns,8ns | 0.8V,3V | 4A,4A | ||||
IXYS Integrated Circuits Division |
3,463
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A DUAL ENABLE 8SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Low-Side | IGBT,N-Channel,P-Channel MOSFET | - | 9ns,8ns | 0.8V,3V | 4A,4A | ||||
IXYS Integrated Circuits Division |
2,088
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A DUAL IN/NON 8SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | IGBT,N-Channel,P-Channel MOSFET | - | 9ns,8ns | 0.8V,3V | 4A,4A | ||||
Infineon Technologies |
8,446
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14DIP
|
Tube | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300",7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | Half-Bridge | IGBT,N-Channel MOSFET | 500V | 25ns,17ns | 6V,9.5V | 2A,2A | ||||
Texas Instruments |
44,750
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DRVR HALF BRDG 5A 12SMD
|
Tape & Reel (TR) | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 12-WFBGA,DSBGA | 12-DSBGA | Surface Mount | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 107V | 7ns,1.5ns | 1.76V,1.89V | 1.2A,5A | ||||
Texas Instruments |
45,363
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF BRDG 5A 12SMD
|
Cut Tape (CT) | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 12-WFBGA,DSBGA | 12-DSBGA | Surface Mount | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 107V | 7ns,1.5ns | 1.76V,1.89V | 1.2A,5A | ||||
Texas Instruments |
45,363
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF BRDG 5A 12SMD
|
- | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 12-WFBGA,DSBGA | 12-DSBGA | Surface Mount | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 107V | 7ns,1.5ns | 1.76V,1.89V | 1.2A,5A | ||||
Infineon Technologies |
9,490
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 14-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 1.9A,2.3A | ||||
Infineon Technologies |
2,891
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
Tube | - | 5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
1,398
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDG 600V 8SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.7V | 1.9A,2.3A | ||||
Texas Instruments |
7,020
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE HV 8SOPWRPAD
|
Tube | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-PowerSOIC (0.154",3.90mm Width) | 8-SO PowerPad | Surface Mount | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 118V | 430ns,260ns | 2.3V,- | 3A,3A |