Voltage - Supply:
Package / Case:
Supplier Device Package:
Rise / Fall Time (Typ):
Découvrez les produits 4,719
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IRS2186SPBF
Infineon Technologies
3,198
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE 600V 8-SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 22ns,18ns 0.8V,2.5V 4A,4A
UCC27211ADRMT
Texas Instruments
20,500
3 jours
-
MOQ: 250  MPQ: 1
IC DVR HIGH/LOW SIDE 4A 8VSON
Tape & Reel (TR) - 8 V ~ 17 V -40°C ~ 140°C (TJ) 8-VDFN Exposed Pad 8-VSON (4x4) Surface Mount Non-Inverting Independent Half-Bridge N-Channel MOSFET 120V 7.2ns,5.5ns 1.3V,2.7V 4A,4A
UCC27211ADRMT
Texas Instruments
23,901
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HIGH/LOW SIDE 4A 8VSON
Cut Tape (CT) - 8 V ~ 17 V -40°C ~ 140°C (TJ) 8-VDFN Exposed Pad 8-VSON (4x4) Surface Mount Non-Inverting Independent Half-Bridge N-Channel MOSFET 120V 7.2ns,5.5ns 1.3V,2.7V 4A,4A
UCC27211ADRMT
Texas Instruments
23,901
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HIGH/LOW SIDE 4A 8VSON
- - 8 V ~ 17 V -40°C ~ 140°C (TJ) 8-VDFN Exposed Pad 8-VSON (4x4) Surface Mount Non-Inverting Independent Half-Bridge N-Channel MOSFET 120V 7.2ns,5.5ns 1.3V,2.7V 4A,4A
UCC27211DRMT
Texas Instruments
7,750
3 jours
-
MOQ: 250  MPQ: 1
IC DVR HIGH/LOW SIDE 4A 8VSON
Tape & Reel (TR) - 8 V ~ 17 V -40°C ~ 140°C (TJ) 8-VDFN Exposed Pad 8-VSON (4x4) Surface Mount Non-Inverting Independent Half-Bridge N-Channel MOSFET 120V 7.2ns,5.5ns 1.3V,2.7V 4A,4A
UCC27211DRMT
Texas Instruments
10,421
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HIGH/LOW SIDE 4A 8VSON
Cut Tape (CT) - 8 V ~ 17 V -40°C ~ 140°C (TJ) 8-VDFN Exposed Pad 8-VSON (4x4) Surface Mount Non-Inverting Independent Half-Bridge N-Channel MOSFET 120V 7.2ns,5.5ns 1.3V,2.7V 4A,4A
UCC27211DRMT
Texas Instruments
10,421
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HIGH/LOW SIDE 4A 8VSON
- - 8 V ~ 17 V -40°C ~ 140°C (TJ) 8-VDFN Exposed Pad 8-VSON (4x4) Surface Mount Non-Inverting Independent Half-Bridge N-Channel MOSFET 120V 7.2ns,5.5ns 1.3V,2.7V 4A,4A
SN75372P
Texas Instruments
4,778
3 jours
-
MOQ: 1  MPQ: 1
IC DUAL MOSFET DRIVER 8-DIP
Tube - 4.75 V ~ 5.25 V,4.75 V ~ 24 V 0°C ~ 70°C (TA) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting Synchronous Low-Side N-Channel MOSFET - - 0.8V,2V 500mA,500mA
MAX627CSA+
Maxim Integrated
1,238
3 jours
-
MOQ: 1  MPQ: 1
IC DVR MOSFET DUAL NON-INV 8SOIC
Tube - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side N-Channel,P-Channel MOSFET - 25ns,20ns 0.8V,2.4V 2A,2A
IXDN604SI
IXYS Integrated Circuits Division
4,679
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR 4A DUAL NONINV 8SOIC
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Low-Side IGBT,N-Channel,P-Channel MOSFET - 9ns,8ns 0.8V,3V 4A,4A
IXDD604SI
IXYS Integrated Circuits Division
3,463
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR 4A DUAL ENABLE 8SOIC
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Low-Side IGBT,N-Channel,P-Channel MOSFET - 9ns,8ns 0.8V,3V 4A,4A
IXDF604SI
IXYS Integrated Circuits Division
2,088
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR 4A DUAL IN/NON 8SOIC
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting,Non-Inverting Independent Low-Side IGBT,N-Channel,P-Channel MOSFET - 9ns,8ns 0.8V,3V 4A,4A
IR2110PBF
Infineon Technologies
8,446
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 14DIP
Tube - 3.3 V ~ 20 V -40°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm) 14-DIP Through Hole Non-Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 500V 25ns,17ns 6V,9.5V 2A,2A
LM5113TME/NOPB
Texas Instruments
44,750
3 jours
-
MOQ: 250  MPQ: 1
IC GATE DRVR HALF BRDG 5A 12SMD
Tape & Reel (TR) - 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 12-WFBGA,DSBGA 12-DSBGA Surface Mount Non-Inverting Independent Half-Bridge N-Channel MOSFET 107V 7ns,1.5ns 1.76V,1.89V 1.2A,5A
LM5113TME/NOPB
Texas Instruments
45,363
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF BRDG 5A 12SMD
Cut Tape (CT) - 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 12-WFBGA,DSBGA 12-DSBGA Surface Mount Non-Inverting Independent Half-Bridge N-Channel MOSFET 107V 7ns,1.5ns 1.76V,1.89V 1.2A,5A
LM5113TME/NOPB
Texas Instruments
45,363
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF BRDG 5A 12SMD
- - 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 12-WFBGA,DSBGA 12-DSBGA Surface Mount Non-Inverting Independent Half-Bridge N-Channel MOSFET 107V 7ns,1.5ns 1.76V,1.89V 1.2A,5A
IRS21834SPBF
Infineon Technologies
9,490
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HALF-BRIDGE 14-SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 14-SOIC (0.154",3.90mm Width) 14-SOIC Surface Mount Inverting,Non-Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 40ns,20ns 0.8V,2.5V 1.9A,2.3A
IR2302SPBF
Infineon Technologies
2,891
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HALF BRIDGE 8SOIC
Tube - 5 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous Half-Bridge IGBT,N-Channel MOSFET 600V 130ns,50ns 0.8V,2.9V 200mA,350mA
IR2183SPBF
Infineon Technologies
1,398
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HALF BRIDG 600V 8SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 40ns,20ns 0.8V,2.7V 1.9A,2.3A
LM5101AMR/NOPB
Texas Instruments
7,020
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HALF-BRIDGE HV 8SOPWRPAD
Tube - 9 V ~ 14 V -40°C ~ 125°C (TJ) 8-PowerSOIC (0.154",3.90mm Width) 8-SO PowerPad Surface Mount Non-Inverting Independent Half-Bridge N-Channel MOSFET 118V 430ns,260ns 2.3V,- 3A,3A