Voltage - Supply:
Package / Case:
Supplier Device Package:
Rise / Fall Time (Typ):
Découvrez les produits 4,719
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
SN75451BDR
Texas Instruments
30,000
3 jours
-
MOQ: 2500  MPQ: 1
IC DUAL PERIPHERAL DRVR 8-SOIC
Tape & Reel (TR) - 4.75 V ~ 5.25 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Low-Side N-Channel,P-Channel MOSFET - 5ns,7ns 0.8V,2V 500mA,500mA
SN75451BDR
Texas Instruments
35,071
3 jours
-
MOQ: 1  MPQ: 1
IC DUAL PERIPHERAL DRVR 8-SOIC
Cut Tape (CT) - 4.75 V ~ 5.25 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Low-Side N-Channel,P-Channel MOSFET - 5ns,7ns 0.8V,2V 500mA,500mA
SN75451BDR
Texas Instruments
35,071
3 jours
-
MOQ: 1  MPQ: 1
IC DUAL PERIPHERAL DRVR 8-SOIC
- - 4.75 V ~ 5.25 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Low-Side N-Channel,P-Channel MOSFET - 5ns,7ns 0.8V,2V 500mA,500mA
SN75453BDR
Texas Instruments
7,500
3 jours
-
MOQ: 2500  MPQ: 1
IC PERIPH DRVR DUAL HS 8-SOIC
Tape & Reel (TR) - 4.75 V ~ 5.25 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Low-Side N-Channel,P-Channel MOSFET - 5ns,7ns 0.8V,2V 500mA,500mA
SN75453BDR
Texas Instruments
10,624
3 jours
-
MOQ: 1  MPQ: 1
IC PERIPH DRVR DUAL HS 8-SOIC
Cut Tape (CT) - 4.75 V ~ 5.25 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Low-Side N-Channel,P-Channel MOSFET - 5ns,7ns 0.8V,2V 500mA,500mA
SN75453BDR
Texas Instruments
10,624
3 jours
-
MOQ: 1  MPQ: 1
IC PERIPH DRVR DUAL HS 8-SOIC
- - 4.75 V ~ 5.25 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Low-Side N-Channel,P-Channel MOSFET - 5ns,7ns 0.8V,2V 500mA,500mA
SN75477DR
Texas Instruments
7,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DUAL PERIPHERAL DRVR 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side - - 50ns,90ns 0.8V,2V 500mA,500mA
SN75477DR
Texas Instruments
11,490
3 jours
-
MOQ: 1  MPQ: 1
IC DUAL PERIPHERAL DRVR 8-SOIC
Cut Tape (CT) - 4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side - - 50ns,90ns 0.8V,2V 500mA,500mA
SN75477DR
Texas Instruments
11,490
3 jours
-
MOQ: 1  MPQ: 1
IC DUAL PERIPHERAL DRVR 8-SOIC
- - 4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side - - 50ns,90ns 0.8V,2V 500mA,500mA
IX4427MTR
IXYS Integrated Circuits Division
42,000
3 jours
-
MOQ: 2000  MPQ: 1
IC MOSFET DVR NONINV 1.5A 8-DFN
Tape & Reel (TR) - 4.5 V ~ 30 V -55°C ~ 150°C (TJ) 8-VDFN Exposed Pad 8-DFN (3x3) Surface Mount Non-Inverting Independent Low-Side N-Channel,P-Channel MOSFET - 10ns,8ns 0.8V,2.4V 1.5A,1.5A
IX4427MTR
IXYS Integrated Circuits Division
42,369
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR NONINV 1.5A 8-DFN
Cut Tape (CT) - 4.5 V ~ 30 V -55°C ~ 150°C (TJ) 8-VDFN Exposed Pad 8-DFN (3x3) Surface Mount Non-Inverting Independent Low-Side N-Channel,P-Channel MOSFET - 10ns,8ns 0.8V,2.4V 1.5A,1.5A
IX4427MTR
IXYS Integrated Circuits Division
42,369
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR NONINV 1.5A 8-DFN
- - 4.5 V ~ 30 V -55°C ~ 150°C (TJ) 8-VDFN Exposed Pad 8-DFN (3x3) Surface Mount Non-Inverting Independent Low-Side N-Channel,P-Channel MOSFET - 10ns,8ns 0.8V,2.4V 1.5A,1.5A
IX4428MTR
IXYS Integrated Circuits Division
10,000
3 jours
-
MOQ: 2000  MPQ: 1
IC MOSFET DVR INV/NON 1.5A 8-DFN
Tape & Reel (TR) - 4.5 V ~ 30 V -55°C ~ 150°C (TJ) 8-VDFN Exposed Pad 8-DFN (3x3) Surface Mount Inverting,Non-Inverting Independent Low-Side N-Channel,P-Channel MOSFET - 10ns,8ns 0.8V,2.4V 1.5A,1.5A
IX4428MTR
IXYS Integrated Circuits Division
11,053
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR INV/NON 1.5A 8-DFN
Cut Tape (CT) - 4.5 V ~ 30 V -55°C ~ 150°C (TJ) 8-VDFN Exposed Pad 8-DFN (3x3) Surface Mount Inverting,Non-Inverting Independent Low-Side N-Channel,P-Channel MOSFET - 10ns,8ns 0.8V,2.4V 1.5A,1.5A
IX4428MTR
IXYS Integrated Circuits Division
11,053
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR INV/NON 1.5A 8-DFN
- - 4.5 V ~ 30 V -55°C ~ 150°C (TJ) 8-VDFN Exposed Pad 8-DFN (3x3) Surface Mount Inverting,Non-Inverting Independent Low-Side N-Channel,P-Channel MOSFET - 10ns,8ns 0.8V,2.4V 1.5A,1.5A
IX4427NTR
IXYS Integrated Circuits Division
8,000
3 jours
-
MOQ: 2000  MPQ: 1
IC MOSFET DRIVER 1.5A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 30 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side N-Channel,P-Channel MOSFET - 10ns,8ns 0.8V,2.4V 1.5A,1.5A
IX4427NTR
IXYS Integrated Circuits Division
9,070
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER 1.5A 8SOIC
Cut Tape (CT) - 4.5 V ~ 30 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side N-Channel,P-Channel MOSFET - 10ns,8ns 0.8V,2.4V 1.5A,1.5A
IX4427NTR
IXYS Integrated Circuits Division
9,070
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER 1.5A 8SOIC
- - 4.5 V ~ 30 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side N-Channel,P-Channel MOSFET - 10ns,8ns 0.8V,2.4V 1.5A,1.5A
IRS2004STRPBF
Infineon Technologies
5,000
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER HALF-BRIDGE 8-SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous Half-Bridge IGBT,N-Channel MOSFET 200V 70ns,35ns 0.8V,2.5V 290mA,600mA
IRS2004STRPBF
Infineon Technologies
7,943
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HALF-BRIDGE 8-SOIC
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous Half-Bridge IGBT,N-Channel MOSFET 200V 70ns,35ns 0.8V,2.5V 290mA,600mA