- Fabricant：
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- Packaging：
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- Voltage - Supply：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 3,131
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
5,148
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
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Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 200V | 10ns，15ns | 6V，9.5V | 3A，3A | ||
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Infineon Technologies |
5,148
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 200V | 10ns，15ns | 6V，9.5V | 3A，3A | ||
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|
|
Renesas Electronics America Inc. |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8-SOIC
|
Tape & Reel (TR) | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | 2A，2A | ||
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|
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Renesas Electronics America Inc. |
11,838
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8-SOIC
|
Cut Tape (CT) | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | 2A，2A | ||
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Renesas Electronics America Inc. |
11,838
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8-SOIC
|
- | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8-SOIC
|
Tape & Reel (TR) | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 4V，7V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
9,420
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8-SOIC
|
Cut Tape (CT) | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 4V，7V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
9,420
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8-SOIC
|
- | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 4V，7V | 2A，2A | ||
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|
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Renesas Electronics America Inc. |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8EPSOIC
|
Tape & Reel (TR) | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
6,742
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8EPSOIC
|
Cut Tape (CT) | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | 2A，2A | ||
|
|
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Renesas Electronics America Inc. |
6,742
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8EPSOIC
|
- | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | 2A，2A | ||
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Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF BRIDGE 14-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
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|
|
Infineon Technologies |
6,862
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 14-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
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|
|
Infineon Technologies |
6,862
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 14-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
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Texas Instruments |
3,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR HALF BRIDGE 4A 10SON
|
Tape & Reel (TR) | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 107V | 7ns，1.5ns | 1.76V，1.89V | 1.2A，5A | ||
|
|
|
Texas Instruments |
3,689
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRIDGE 4A 10SON
|
Cut Tape (CT) | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 107V | 7ns，1.5ns | 1.76V，1.89V | 1.2A，5A | ||
|
|
|
Texas Instruments |
3,689
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRIDGE 4A 10SON
|
- | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 107V | 7ns，1.5ns | 1.76V，1.89V | 1.2A，5A | ||
|
|
|
Infineon Technologies |
7,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
Tape & Reel (TR) | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
|
|
|
Infineon Technologies |
7,166
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
Cut Tape (CT) | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
|
|
|
Infineon Technologies |
7,166
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
- | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | 2A，2A |
