Fabricant:
Series:
Supplier Device Package:
Input Type:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Rise / Fall Time (Typ):
Logic Voltage - VIL, VIH:
Current - Peak Output (Source, Sink):
Découvrez les produits 8
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Supplier Device Package Input Type Channel Type Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
PE29100A-X
pSemi
500
3 jours
-
MOQ: 500  MPQ: 1
HIGH-SPEED FET DRIVER 33 MHZ
Tape & Reel (TR) - 4 V ~ 5.5 V -40°C ~ 125°C (TJ) Die - Synchronous 2 N-Channel MOSFET 100V 2.5ns,2.5ns - 2A,4A
PE29100A-X
pSemi
615
3 jours
-
MOQ: 1  MPQ: 1
HIGH-SPEED FET DRIVER 33 MHZ
Cut Tape (CT) - 4 V ~ 5.5 V -40°C ~ 125°C (TJ) Die - Synchronous 2 N-Channel MOSFET 100V 2.5ns,2.5ns - 2A,4A
PE29100A-X
pSemi
615
3 jours
-
MOQ: 1  MPQ: 1
HIGH-SPEED FET DRIVER 33 MHZ
- - 4 V ~ 5.5 V -40°C ~ 125°C (TJ) Die - Synchronous 2 N-Channel MOSFET 100V 2.5ns,2.5ns - 2A,4A
6ED003L06C2X1SA1
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DVR 3-PH 600V DIE
Bulk EiceDriver 13 V ~ 17.5 V -40°C ~ 125°C (TJ) Chip Non-Inverting 3-Phase 6 IGBT 600V 60ns,26ns 1.1V,1.7V -
6EDL04I06NCX1SA1
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DVR 3-PH 600V DIE
Bulk EiceDriver 13 V ~ 17.5 V -40°C ~ 125°C (TJ) Chip Non-Inverting 3-Phase 6 IGBT 600V 60ns,26ns 1.1V,1.7V -
6EDL04I06PCX1SA1
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DVR 3-PH 600V DIE
Bulk EiceDriver 13 V ~ 17.5 V -40°C ~ 125°C (TJ) Chip Non-Inverting 3-Phase 6 IGBT 600V 60ns,26ns 1.1V,1.7V -
6EDL04N06PCX1SA1
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DVR 3-PH 600V DIE
Bulk EiceDriver 13 V ~ 17.5 V -40°C ~ 125°C (TJ) Chip Non-Inverting 3-Phase 6 IGBT 600V 60ns,26ns 1.1V,1.7V -
UCC27201ATDA2
Texas Instruments
Enquête
-
-
MOQ: 20  MPQ: 1
IC DVR HIGH/LOW SIDE 3A DIE
Tube - 8 V ~ 17 V -40°C ~ 140°C (TJ) Die Non-Inverting Independent 2 N-Channel MOSFET 120V 8ns,7ns 0.8V,2.5V 3A,3A