- Packaging:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 201
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
ON Semiconductor |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC BRIDGE DVR P-N 2A 30V 8-SOIC
|
Tape & Reel (TR) | - | 8 V ~ 27 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | 2 | N-Channel,P-Channel MOSFET | 21ns,8ns | 0.8V,2.25V | 1A,1.5A | ||||
ON Semiconductor |
12,102
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC BRIDGE DVR P-N 2A 30V 8-SOIC
|
Cut Tape (CT) | - | 8 V ~ 27 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | 2 | N-Channel,P-Channel MOSFET | 21ns,8ns | 0.8V,2.25V | 1A,1.5A | ||||
ON Semiconductor |
12,102
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC BRIDGE DVR P-N 2A 30V 8-SOIC
|
- | - | 8 V ~ 27 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | 2 | N-Channel,P-Channel MOSFET | 21ns,8ns | 0.8V,2.25V | 1A,1.5A | ||||
Power Integrations |
261
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL GATE DRIVER 18A
|
Tray | SCALE-1 | 15V | -40°C ~ 85°C (TA) | Module | Module | Surface Mount | - | - | 2 | IGBT,N-Channel,P-Channel MOSFET | - | - | 18A,18A | ||||
Maxim Integrated |
351
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL PWR 8-DIP
|
Tube | - | 4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | 2 | N-Channel MOSFET | 20ns,20ns | 0.8V,2V | - | ||||
Power Integrations |
107
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL GATE DRIVER 6A
|
Tray | SCALE-1 | 15V | -40°C ~ 85°C (TA) | Module | Module | Surface Mount | - | - | 2 | IGBT,N-Channel,P-Channel MOSFET | 100ns,80ns | - | 6A,6A | ||||
Texas Instruments |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DRVR SYNC DUAL 8SON
|
Tape & Reel (TR) | - | 4.5 V ~ 5.5 V | -40°C ~ 105°C (TJ) | 8-VDFN Exposed Pad | 8-SON (3x3) | Surface Mount | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 15ns,10ns | 0.7V,4V | - | ||||
Texas Instruments |
8,914
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SYNC DUAL 8SON
|
Cut Tape (CT) | - | 4.5 V ~ 5.5 V | -40°C ~ 105°C (TJ) | 8-VDFN Exposed Pad | 8-SON (3x3) | Surface Mount | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 15ns,10ns | 0.7V,4V | - | ||||
Texas Instruments |
8,914
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SYNC DUAL 8SON
|
- | - | 4.5 V ~ 5.5 V | -40°C ~ 105°C (TJ) | 8-VDFN Exposed Pad | 8-SON (3x3) | Surface Mount | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 15ns,10ns | 0.7V,4V | - | ||||
Maxim Integrated |
332
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL PWR 8-SOIC
|
Tube | - | 4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | 2 | N-Channel MOSFET | 20ns,20ns | 0.8V,2V | - | ||||
Maxim Integrated |
104
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL PWR 8-SOIC
|
Tube | - | 4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | 2 | N-Channel MOSFET | 20ns,20ns | 0.8V,2V | - | ||||
Maxim Integrated |
150
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL PWR 8-DIP
|
Tube | - | 4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | 2 | N-Channel MOSFET | 20ns,20ns | 0.8V,2V | - | ||||
ROHM Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
2CH HALF-BRIDGE GATE DRIVER
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 3 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 24-VSSOP (0.220",5.60mm Width) Exposed Pad | 24-HTSSOP-B | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | - | - | - | ||||
ROHM Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
2CH HALF-BRIDGE GATE DRIVER
|
Cut Tape (CT) | Automotive,AEC-Q100 | 3 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 24-VSSOP (0.220",5.60mm Width) Exposed Pad | 24-HTSSOP-B | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | - | - | - | ||||
ROHM Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
2CH HALF-BRIDGE GATE DRIVER
|
- | Automotive,AEC-Q100 | 3 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 24-VSSOP (0.220",5.60mm Width) Exposed Pad | 24-HTSSOP-B | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | - | - | - | ||||
Maxim Integrated |
1,900
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET HS 10-TDFN
|
Strip | - | 4.5 V ~ 6.5 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN (3x3) | Surface Mount | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 14ns,9ns | 0.8V,2.5V | - | ||||
Texas Instruments |
148
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
4A/6A 2KVRMS DUAL CH ISO DR 8V
|
Tube | - | 3 V ~ 5.5 V | -40°C ~ 125°C (TA) | 16-SOIC (0.154",3.90mm Width) | 16-SOIC | Surface Mount | CMOS/TTL | Independent | 2 | IGBT,N-Channel MOSFET | 5ns,6ns | 1.25V,1.6V | 4A,6A | ||||
STMicroelectronics |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC FET DVR 3PHASE BLDC 64TQFP
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 5 V ~ 54 V | -40°C ~ 150°C (TJ) | 64-TQFP Exposed Pad | 64-TQFP-EP (10x10) | Surface Mount | - | 3-Phase | 6 | N-Channel MOSFET | 35ns,35ns | 0.8V,2V | - | ||||
STMicroelectronics |
1,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DVR 3PHASE BLDC 64TQFP
|
Cut Tape (CT) | Automotive,AEC-Q100 | 5 V ~ 54 V | -40°C ~ 150°C (TJ) | 64-TQFP Exposed Pad | 64-TQFP-EP (10x10) | Surface Mount | - | 3-Phase | 6 | N-Channel MOSFET | 35ns,35ns | 0.8V,2V | - | ||||
STMicroelectronics |
1,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DVR 3PHASE BLDC 64TQFP
|
- | Automotive,AEC-Q100 | 5 V ~ 54 V | -40°C ~ 150°C (TJ) | 64-TQFP Exposed Pad | 64-TQFP-EP (10x10) | Surface Mount | - | 3-Phase | 6 | N-Channel MOSFET | 35ns,35ns | 0.8V,2V | - |