- Packaging:
-
- Series:
-
- Voltage - Supply:
-
- Operating Temperature:
-
- Package / Case:
-
- Input Type:
-
- Channel Type:
-
- Gate Type:
-
- Rise / Fall Time (Typ):
-
- Logic Voltage - VIL, VIH:
-
- Current - Peak Output (Source, Sink):
-
- Conditions sélectionnées:
Découvrez les produits 31
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
ON Semiconductor |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | Non-Inverting | Independent | IGBT,N-Channel MOSFET | 600V | 60ns,30ns | 0.8V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
9,845
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | Non-Inverting | Independent | IGBT,N-Channel MOSFET | 600V | 60ns,30ns | 0.8V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
9,845
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | Non-Inverting | Independent | IGBT,N-Channel MOSFET | 600V | 60ns,30ns | 0.8V,2.5V | 350mA,650mA | ||||
Richtek USA Inc. |
Enquête
|
- |
-
|
MOQ: 3500 MPQ: 1
|
IC FET DVR 1CH SYNC BUCK 8SOP
|
Tape & Reel (TR) | - | 4.5 V ~ 13.2 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Inverting,Non-Inverting | Synchronous | N-Channel MOSFET | 15V | 25ns,12ns | 0.7V,3.2V | - | ||||
Richtek USA Inc. |
1,573
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DVR 1CH SYNC BUCK 8SOP
|
Cut Tape (CT) | - | 4.5 V ~ 13.2 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Inverting,Non-Inverting | Synchronous | N-Channel MOSFET | 15V | 25ns,12ns | 0.7V,3.2V | - | ||||
Richtek USA Inc. |
1,573
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DVR 1CH SYNC BUCK 8SOP
|
- | - | 4.5 V ~ 13.2 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Inverting,Non-Inverting | Synchronous | N-Channel MOSFET | 15V | 25ns,12ns | 0.7V,3.2V | - | ||||
Richtek USA Inc. |
Enquête
|
- |
-
|
MOQ: 12500 MPQ: 1
|
IC HALF-BRIDGE GATE DRVR SOP-8
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Independent | IGBT,N-Channel MOSFET | 600V | 70ns,35ns | 0.8V,2.5V | 300mA,600mA | ||||
Richtek USA Inc. |
2,486
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF-BRIDGE GATE DRVR SOP-8
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Independent | IGBT,N-Channel MOSFET | 600V | 70ns,35ns | 0.8V,2.5V | 300mA,600mA | ||||
Richtek USA Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC FET DVR 1CH SYNC BUCK 8SOP
|
Tape & Reel (TR) | - | 4.5 V ~ 13.2 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Inverting,Non-Inverting | Synchronous | N-Channel MOSFET | 15V | 25ns,12ns | 0.7V,3.2V | - | ||||
Richtek USA Inc. |
699
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DVR 1CH SYNC BUCK 8SOP
|
Cut Tape (CT) | - | 4.5 V ~ 13.2 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Inverting,Non-Inverting | Synchronous | N-Channel MOSFET | 15V | 25ns,12ns | 0.7V,3.2V | - | ||||
Richtek USA Inc. |
699
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DVR 1CH SYNC BUCK 8SOP
|
- | - | 4.5 V ~ 13.2 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Inverting,Non-Inverting | Synchronous | N-Channel MOSFET | 15V | 25ns,12ns | 0.7V,3.2V | - | ||||
ROHM Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SOP
|
Tape & Reel (TR) | - | 10 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.173",4.40mm Width) | Non-Inverting | Independent | IGBT,N-Channel MOSFET | 600V | 200ns,100ns | 1V,2.6V | 60mA,130mA | ||||
ROHM Semiconductor |
876
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SOP
|
Cut Tape (CT) | - | 10 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.173",4.40mm Width) | Non-Inverting | Independent | IGBT,N-Channel MOSFET | 600V | 200ns,100ns | 1V,2.6V | 60mA,130mA | ||||
ROHM Semiconductor |
876
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SOP
|
- | - | 10 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.173",4.40mm Width) | Non-Inverting | Independent | IGBT,N-Channel MOSFET | 600V | 200ns,100ns | 1V,2.6V | 60mA,130mA | ||||
ON Semiconductor |
39
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI/LOW SIDE 8SOIC
|
Cut Tape (CT) | Automotive,AEC-Q100 | 10 V ~ 22 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Independent | IGBT,N-Channel MOSFET | 600V | 25ns,20ns | 1.2V,2.5V | 4.5A,4.5A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI/LOW SIDE 8SOIC
|
- | Automotive,AEC-Q100 | 10 V ~ 22 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Independent | IGBT,N-Channel MOSFET | 600V | 25ns,20ns | 1.2V,2.5V | 4.5A,4.5A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HALF BRIDGE 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Synchronous | IGBT,N-Channel MOSFET | 600V | 25ns,20ns | 0.8V,2.5V | 2.5A,2.5A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRIDGE 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Synchronous | IGBT,N-Channel MOSFET | 600V | 25ns,20ns | 0.8V,2.5V | 2.5A,2.5A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRIDGE 8-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Synchronous | IGBT,N-Channel MOSFET | 600V | 25ns,20ns | 0.8V,2.5V | 2.5A,2.5A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 8100 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | Non-Inverting | Independent | IGBT,N-Channel MOSFET | 600V | 60ns,30ns | 0.8V,2.5V | 350mA,650mA |