- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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Découvrez les produits 119
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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ON Semiconductor |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8SOIC
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOP | Non-Inverting | Independent | IGBT，N-Channel MOSFET | 600V | 60ns，30ns | 0.8V，2.5V | 350mA，650mA | ||
|
|
|
ON Semiconductor |
9,845
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8SOIC
|
Cut Tape (CT) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOP | Non-Inverting | Independent | IGBT，N-Channel MOSFET | 600V | 60ns，30ns | 0.8V，2.5V | 350mA，650mA | ||
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|
|
ON Semiconductor |
9,845
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOP | Non-Inverting | Independent | IGBT，N-Channel MOSFET | 600V | 60ns，30ns | 0.8V，2.5V | 350mA，650mA | ||
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|
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Renesas Electronics America Inc. |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8EPSOIC
|
Tape & Reel (TR) | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
6,742
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8EPSOIC
|
Cut Tape (CT) | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
6,742
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8EPSOIC
|
- | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | 2A，2A | ||
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|
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Maxim Integrated |
392
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSF DRVR HALF BRDG HS 8-SOIC
|
Tube | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC-EP | Inverting，Non-Inverting | Independent | N-Channel MOSFET | 125V | 50ns，40ns | 0.8V，2V | 3A，3A | ||
|
|
|
Maxim Integrated |
253
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSF DRVR HALF BRDG HS 8-SOIC
|
Tube | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Independent | N-Channel MOSFET | 125V | 50ns，40ns | 0.8V，2V | 3A，3A | ||
|
|
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Renesas Electronics America Inc. |
1,649
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8EPSOIC
|
Tube | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | 2A，2A | ||
|
|
|
Maxim Integrated |
171
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF-BRIDGE MOSFET DVR 8-SOIC
|
Tube | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC-EP | Inverting，Non-Inverting | Independent | N-Channel MOSFET | 175V | 65ns，65ns | - | 2A，2A | ||
|
|
|
Maxim Integrated |
190
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 8-SOIC
|
Tube | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Independent | N-Channel MOSFET | 125V | 65ns，65ns | - | 2A，2A | ||
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|
|
Monolithic Power Systems Inc. |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DRIVER
|
Tape & Reel (TR) | 9 V ~ 16 V | -40°C ~ 140°C (TJ) | 8-SOIC-EP | Non-Inverting | Independent | N-Channel MOSFET | 100V | 12ns，9ns | 1V，2.4V | 2.5A，2.5A | ||
|
|
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Renesas Electronics America Inc. |
709
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8EPSOIC
|
Tube | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Independent | N-Channel MOSFET | 114V | 10ns，10ns | 4V，7V | 2A，2A | ||
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|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR SYNC BUCK 8EPSOIC
|
Tape & Reel (TR) | 10.8 V ~ 13.2 V | -40°C ~ 125°C (TJ) | 8-SOIC-EP | Non-Inverting | Synchronous | N-Channel MOSFET | 36V | 26ns，18ns | - | 1.25A，2A | ||
|
|
|
Renesas Electronics America Inc. |
4,558
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC BUCK 8EPSOIC
|
Cut Tape (CT) | 10.8 V ~ 13.2 V | -40°C ~ 125°C (TJ) | 8-SOIC-EP | Non-Inverting | Synchronous | N-Channel MOSFET | 36V | 26ns，18ns | - | 1.25A，2A | ||
|
|
|
Renesas Electronics America Inc. |
4,558
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC BUCK 8EPSOIC
|
- | 10.8 V ~ 13.2 V | -40°C ~ 125°C (TJ) | 8-SOIC-EP | Non-Inverting | Synchronous | N-Channel MOSFET | 36V | 26ns，18ns | - | 1.25A，2A | ||
|
|
|
Maxim Integrated |
27
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSF DRVR HALF BRDG HS 8-SOIC
|
Tube | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Independent | N-Channel MOSFET | 125V | 50ns，40ns | - | 3A，3A | ||
|
|
|
Maxim Integrated |
100
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 8-SOIC
|
Tube | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC-EP | Inverting，Non-Inverting | Independent | N-Channel MOSFET | 125V | 65ns，65ns | 0.8V，2V | 2A，2A | ||
|
|
|
Maxim Integrated |
82
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF-BRIDGE MOSFET DVR 8-SOIC
|
Tube | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Independent | N-Channel MOSFET | 175V | 65ns，65ns | 0.8V，2V | 2A，2A | ||
|
|
|
Maxim Integrated |
2
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF-BRIDGE MOSFET DVR 8-SOIC
|
Tube | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC-EP | Inverting，Non-Inverting | Independent | N-Channel MOSFET | 175V | 65ns，65ns | 0.8V，2V | 2A，2A |
