- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Conditions sélectionnées:
Découvrez les produits 105
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
Infineon Technologies |
17,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 22ns,18ns | 0.8V,2.5V | ||||
Infineon Technologies |
19,926
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 22ns,18ns | 0.8V,2.5V | ||||
Infineon Technologies |
19,926
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 22ns,18ns | 0.8V,2.5V | ||||
Texas Instruments |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8SOPWR
|
Tape & Reel (TR) | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154",3.90mm Width) | 8-SO PowerPad | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 120V | 7.2ns,5.5ns | 1.3V,2.8V | ||||
Texas Instruments |
3,671
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8SOPWR
|
Cut Tape (CT) | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154",3.90mm Width) | 8-SO PowerPad | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 120V | 7.2ns,5.5ns | 1.3V,2.8V | ||||
Texas Instruments |
3,671
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8SOPWR
|
- | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154",3.90mm Width) | 8-SO PowerPad | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 120V | 7.2ns,5.5ns | 1.3V,2.8V | ||||
Texas Instruments |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8SOIC
|
Tape & Reel (TR) | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 120V | 7.2ns,5.5ns | 1.3V,2.7V | ||||
Texas Instruments |
3,318
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8SOIC
|
Cut Tape (CT) | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 120V | 7.2ns,5.5ns | 1.3V,2.7V | ||||
Texas Instruments |
3,318
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8SOIC
|
- | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 120V | 7.2ns,5.5ns | 1.3V,2.7V | ||||
Infineon Technologies |
3,198
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 600V 8-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 22ns,18ns | 0.8V,2.5V | ||||
Texas Instruments |
20,500
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8VSON
|
Tape & Reel (TR) | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-VDFN Exposed Pad | 8-VSON (4x4) | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 120V | 7.2ns,5.5ns | 1.3V,2.7V | ||||
Texas Instruments |
23,901
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8VSON
|
Cut Tape (CT) | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-VDFN Exposed Pad | 8-VSON (4x4) | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 120V | 7.2ns,5.5ns | 1.3V,2.7V | ||||
Texas Instruments |
23,901
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8VSON
|
- | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-VDFN Exposed Pad | 8-VSON (4x4) | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 120V | 7.2ns,5.5ns | 1.3V,2.7V | ||||
Texas Instruments |
7,750
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8VSON
|
Tape & Reel (TR) | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-VDFN Exposed Pad | 8-VSON (4x4) | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 120V | 7.2ns,5.5ns | 1.3V,2.7V | ||||
Texas Instruments |
10,421
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8VSON
|
Cut Tape (CT) | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-VDFN Exposed Pad | 8-VSON (4x4) | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 120V | 7.2ns,5.5ns | 1.3V,2.7V | ||||
Texas Instruments |
10,421
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8VSON
|
- | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-VDFN Exposed Pad | 8-VSON (4x4) | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 120V | 7.2ns,5.5ns | 1.3V,2.7V | ||||
Texas Instruments |
502
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC HALF-BRIDGE GATE DRVR 10WSON
|
Tape & Reel (TR) | - | 7 V ~ 17 V | -40°C ~ 140°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 100V | 7.8ns,6ns | 1.2V,2.55V | ||||
Texas Instruments |
1,587
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF-BRIDGE GATE DRVR 10WSON
|
Cut Tape (CT) | - | 7 V ~ 17 V | -40°C ~ 140°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 100V | 7.8ns,6ns | 1.2V,2.55V | ||||
Texas Instruments |
1,587
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF-BRIDGE GATE DRVR 10WSON
|
- | - | 7 V ~ 17 V | -40°C ~ 140°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 100V | 7.8ns,6ns | 1.2V,2.55V | ||||
Infineon Technologies |
2,602
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 600V 8-DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 22ns,18ns | 0.8V,2.5V |