- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 122
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF-BRDG SELF OSC 8SOIC
|
Tape & Reel (TR) | 10 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | RC Input Circuit | Synchronous | 2 | N-Channel MOSFET | 100V | 40ns，20ns | - | 1A，1A | ||
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|
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Infineon Technologies |
4,410
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRDG SELF OSC 8SOIC
|
Cut Tape (CT) | 10 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | RC Input Circuit | Synchronous | 2 | N-Channel MOSFET | 100V | 40ns，20ns | - | 1A，1A | ||
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Infineon Technologies |
4,410
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRDG SELF OSC 8SOIC
|
- | 10 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | RC Input Circuit | Synchronous | 2 | N-Channel MOSFET | 100V | 40ns，20ns | - | 1A，1A | ||
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Texas Instruments |
12,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
|
Tape & Reel (TR) | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154"，3.90mm Width) | 8-SO PowerPad | Non-Inverting | Independent | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | 3A，3A | ||
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Texas Instruments |
16,709
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
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Cut Tape (CT) | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154"，3.90mm Width) | 8-SO PowerPad | Non-Inverting | Independent | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | 3A，3A | ||
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Texas Instruments |
16,709
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
|
- | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154"，3.90mm Width) | 8-SO PowerPad | Non-Inverting | Independent | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | 3A，3A | ||
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ROHM Semiconductor |
6,000
|
3 jours |
-
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MOQ: 2000 MPQ: 1
|
2CH HALF-BRIDGE GATE DRIVER
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Tape & Reel (TR) | 3 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 24-VSSOP (0.220"，5.60mm Width) Exposed Pad | 24-HTSSOP-B | Non-Inverting | Independent | 2 | N-Channel MOSFET | - | - | - | - | ||
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ROHM Semiconductor |
6,000
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
2CH HALF-BRIDGE GATE DRIVER
|
Cut Tape (CT) | 3 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 24-VSSOP (0.220"，5.60mm Width) Exposed Pad | 24-HTSSOP-B | Non-Inverting | Independent | 2 | N-Channel MOSFET | - | - | - | - | ||
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|
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ROHM Semiconductor |
6,000
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
2CH HALF-BRIDGE GATE DRIVER
|
- | 3 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 24-VSSOP (0.220"，5.60mm Width) Exposed Pad | 24-HTSSOP-B | Non-Inverting | Independent | 2 | N-Channel MOSFET | - | - | - | - | ||
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Renesas Electronics America Inc. |
250
|
3 jours |
-
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MOQ: 250 MPQ: 1
|
IC DRVR HALF BRIDGE 10DFN
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Tape & Reel (TR) | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 14-TSSOP (0.173"，4.40mm Width) Exposed Pad | 14-HTSSOP | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 1.8V，4V | 2A，2A | ||
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Renesas Electronics America Inc. |
379
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR HALF BRIDGE 10DFN
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Cut Tape (CT) | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 14-TSSOP (0.173"，4.40mm Width) Exposed Pad | 14-HTSSOP | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 1.8V，4V | 2A，2A | ||
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|
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Renesas Electronics America Inc. |
379
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR HALF BRIDGE 10DFN
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- | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 14-TSSOP (0.173"，4.40mm Width) Exposed Pad | 14-HTSSOP | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 1.8V，4V | 2A，2A | ||
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Renesas Electronics America Inc. |
965
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR HALF BRIDGE 10DFN
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Tube | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 14-TSSOP (0.173"，4.40mm Width) Exposed Pad | 14-HTSSOP | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 1.8V，4V | 2A，2A | ||
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STMicroelectronics |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC FET DVR 3PHASE BLDC 64TQFP
|
Tape & Reel (TR) | 5 V ~ 54 V | -40°C ~ 150°C (TJ) | 64-TQFP Exposed Pad | 64-TQFP-EP (10x10) | - | 3-Phase | 6 | N-Channel MOSFET | - | 35ns，35ns | 0.8V，2V | - | ||
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STMicroelectronics |
1,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DVR 3PHASE BLDC 64TQFP
|
Cut Tape (CT) | 5 V ~ 54 V | -40°C ~ 150°C (TJ) | 64-TQFP Exposed Pad | 64-TQFP-EP (10x10) | - | 3-Phase | 6 | N-Channel MOSFET | - | 35ns，35ns | 0.8V，2V | - | ||
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STMicroelectronics |
1,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DVR 3PHASE BLDC 64TQFP
|
- | 5 V ~ 54 V | -40°C ~ 150°C (TJ) | 64-TQFP Exposed Pad | 64-TQFP-EP (10x10) | - | 3-Phase | 6 | N-Channel MOSFET | - | 35ns，35ns | 0.8V，2V | - | ||
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|
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Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVER HALF BRIDGE 8WSON
|
Tape & Reel (TR) | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (4x4) | Non-Inverting | Independent | 2 | N-Channel MOSFET | 108V | 15ns，15ns | 0.8V，2.2V | 1A，1A | ||
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|
|
Texas Instruments |
1,955
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDGE 8WSON
|
Cut Tape (CT) | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (4x4) | Non-Inverting | Independent | 2 | N-Channel MOSFET | 108V | 15ns，15ns | 0.8V，2.2V | 1A，1A | ||
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|
|
Texas Instruments |
1,955
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDGE 8WSON
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (4x4) | Non-Inverting | Independent | 2 | N-Channel MOSFET | 108V | 15ns，15ns | 0.8V，2.2V | 1A，1A | ||
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|
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Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR SINK SYNC 4A 8SOIC
|
Tape & Reel (TR) | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 33V | 10ns，10ns | 0.8V，2.1V | 2A，2A |
