- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 29
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Diodes Incorporated |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
Tape & Reel (TR) | 4.5 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 | CMOS/TTL | Synchronous | 2 | N-Channel MOSFET | 50V | 16ns，12ns | 1.5A，2.5A | ||
|
|
|
Diodes Incorporated |
3,076
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
Cut Tape (CT) | 4.5 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 | CMOS/TTL | Synchronous | 2 | N-Channel MOSFET | 50V | 16ns，12ns | 1.5A，2.5A | ||
|
|
|
Diodes Incorporated |
3,076
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
- | 4.5 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 | CMOS/TTL | Synchronous | 2 | N-Channel MOSFET | 50V | 16ns，12ns | 1.5A，2.5A | ||
|
|
|
Diodes Incorporated |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HV W-DFN3030-10
|
Tape & Reel (TR) | 4.5 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 (type TH) | CMOS/TTL | Synchronous | 2 | N-Channel MOSFET | 50V | 17ns，12ns | 1.5A，2.5A | ||
|
|
|
Diodes Incorporated |
3,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HV W-DFN3030-10
|
Cut Tape (CT) | 4.5 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 (type TH) | CMOS/TTL | Synchronous | 2 | N-Channel MOSFET | 50V | 17ns，12ns | 1.5A，2.5A | ||
|
|
|
Diodes Incorporated |
3,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HV W-DFN3030-10
|
- | 4.5 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 (type TH) | CMOS/TTL | Synchronous | 2 | N-Channel MOSFET | 50V | 17ns，12ns | 1.5A，2.5A | ||
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|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE HV DRIVER MSOP-10
|
Tape & Reel (TR) | 8 V ~ 14 V | -40°C ~ 125°C (TA) | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-MSOP | CMOS/TTL | Synchronous | 2 | N-Channel MOSFET | 50V | 17ns，12ns | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
2,158
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE HV DRIVER MSOP-10
|
Cut Tape (CT) | 8 V ~ 14 V | -40°C ~ 125°C (TA) | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-MSOP | CMOS/TTL | Synchronous | 2 | N-Channel MOSFET | 50V | 17ns，12ns | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
2,158
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE HV DRIVER MSOP-10
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TA) | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-MSOP | CMOS/TTL | Synchronous | 2 | N-Channel MOSFET | 50V | 17ns，12ns | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
Tape & Reel (TR) | 8 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 | CMOS/TTL | Synchronous | 2 | N-Channel MOSFET | 50V | 17ns，12ns | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
2,553
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
Cut Tape (CT) | 8 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 | CMOS/TTL | Synchronous | 2 | N-Channel MOSFET | 50V | 17ns，12ns | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
2,553
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 | CMOS/TTL | Synchronous | 2 | N-Channel MOSFET | 50V | 17ns，12ns | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
Tape & Reel (TR) | 8 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 | CMOS/TTL | Synchronous | 2 | N-Channel MOSFET | 50V | 16ns，18ns | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
2,845
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
Cut Tape (CT) | 8 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 | CMOS/TTL | Synchronous | 2 | N-Channel MOSFET | 50V | 16ns，18ns | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
2,845
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 | CMOS/TTL | Synchronous | 2 | N-Channel MOSFET | 50V | 16ns，18ns | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1500 MPQ: 1
|
HV GATE DRIVER SO-28
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SO | Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 90ns，35ns | 200mA，350mA | ||
|
|
|
Diodes Incorporated |
1,204
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HV GATE DRIVER SO-28
|
Cut Tape (CT) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SO | Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 90ns，35ns | 200mA，350mA | ||
|
|
|
Diodes Incorporated |
1,204
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HV GATE DRIVER SO-28
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SO | Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 90ns，35ns | 200mA，350mA | ||
|
|
|
Maxim Integrated |
45
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR MOSFET DUAL 20-TQFN
|
Tube | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 20-WFQFN Exposed Pad | 20-TQFN (4x4) | Non-Inverting | Synchronous | 4 | N-Channel MOSFET | - | 16ns，14ns | 1.5A，1.5A | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRVR MOSFET DUAL 20-TQFN
|
Tape & Reel (TR) | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 20-WFQFN Exposed Pad | 20-TQFN (4x4) | Non-Inverting | Synchronous | 4 | N-Channel MOSFET | - | 16ns，14ns | 1.5A，1.5A |
