- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 480
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
7,943
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
ON Semiconductor |
25,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW GATE 8-SOP
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 200V | 60ns，30ns | 0.8V，2.9V | 350mA，650mA | ||
|
|
|
ON Semiconductor |
21,270
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDGE 8-SOP
|
- | 15 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | 2 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 1.2V，2.9V | 350mA，650mA | ||
|
|
|
ON Semiconductor |
9,845
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOP | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 60ns，30ns | 0.8V，2.5V | 350mA，650mA | ||
|
|
|
ON Semiconductor |
12,102
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC BRIDGE DVR P-N 2A 30V 8-SOIC
|
- | 8 V ~ 27 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | 2 | N-Channel，P-Channel MOSFET | - | 21ns，8ns | 0.8V，2.25V | 1A，1.5A | ||
|
|
|
Texas Instruments |
36,233
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE 100V 1A 8SOIC
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | 2 | N-Channel MOSFET | 108V | 15ns，15ns | 0.8V，2.2V | 1A，1A | ||
|
|
|
Texas Instruments |
11,870
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE 90V 1A 8-SOIC
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | 2 | N-Channel MOSFET | 108V | 15ns，15ns | 0.8V，2.2V | 1A，1A | ||
|
|
|
ON Semiconductor |
8,128
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRIDGE GATE DRIVER 8-SOP
|
- | 11 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 1.2V，2.5V | 350mA，650mA | ||
|
|
|
Texas Instruments |
51,980
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF 1A 8WSON
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-WSON (4x4) | Non-Inverting | Independent | 2 | N-Channel MOSFET | 108V | 15ns，15ns | 0.8V，2.2V | 1A，1A | ||
|
|
|
Texas Instruments |
36,650
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE 100V 1A 8WSON
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-WSON (4x4) | Non-Inverting | Independent | 2 | N-Channel MOSFET | 108V | 15ns，15ns | 0.8V，2.2V | 1A，1A | ||
|
|
|
Texas Instruments |
9,372
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8SON
|
- | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-SON (3x3) | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 33V | 10ns，10ns | - | 2A，2A | ||
|
|
|
Infineon Technologies |
12,190
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
STMicroelectronics |
9,768
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE HV 8-SOIC
|
- | 17V (Max) | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，40ns | 1.1V，1.8V | 400mA，650mA | ||
|
|
|
Infineon Technologies |
11,887
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Texas Instruments |
6,116
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SYNC 8WSON
|
- | 4.5 V ~ 5.5 V | -40°C ~ 105°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (2x2) | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 34V | 30ns，8ns | 0.6V，2.65V | - | ||
|
|
|
Infineon Technologies |
14,090
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 600V 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
|
|
|
Infineon Technologies |
6,895
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
|
|
|
Texas Instruments |
50,753
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRIDGE 10WSON
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 118V | 15ns，10ns | 0.8V，2.2V | 1.2A，1.8A | ||
|
|
|
Texas Instruments |
25,202
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10-MSOP
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 118V | 15ns，10ns | 0.8V，2.2V | 1.2A，1.8A | ||
|
|
|
Infineon Technologies |
9,998
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
- | 5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.9V | 200mA，350mA |
