- Fabricant:
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- Packaging:
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- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Input Type:
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- Channel Type:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 3,131
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
ON Semiconductor |
6,038
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDG 20SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295",7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | 3-Phase | 6 | IGBT,N-Channel MOSFET | 200V | 50ns,30ns | 1V,2.5V | 350mA,650mA | ||||
Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 14DSO
|
Tape & Reel (TR) | EiceDriver | 10 V ~ 17.5 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-DSO | Surface Mount | Non-Inverting | Independent | 2 | N-Channel,P-Channel MOSFET | 600V | 48ns,37ns | 1.1V,1.7V | 1.8A,2.3A | ||||
Infineon Technologies |
9,815
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 14DSO
|
Cut Tape (CT) | EiceDriver | 10 V ~ 17.5 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-DSO | Surface Mount | Non-Inverting | Independent | 2 | N-Channel,P-Channel MOSFET | 600V | 48ns,37ns | 1.1V,1.7V | 1.8A,2.3A | ||||
Infineon Technologies |
9,815
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 14DSO
|
- | EiceDriver | 10 V ~ 17.5 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-DSO | Surface Mount | Non-Inverting | Independent | 2 | N-Channel,P-Channel MOSFET | 600V | 48ns,37ns | 1.1V,1.7V | 1.8A,2.3A | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 14DSO
|
Tape & Reel (TR) | EiceDriver | 10 V ~ 25 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | PG-DSO-14 | Surface Mount | Non-Inverting | Independent | 2 | IGBT | 600V | 48ns,37ns | 1.1V,1.7V | 2.3A,2.3A | ||||
Infineon Technologies |
4,972
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 14DSO
|
Cut Tape (CT) | EiceDriver | 10 V ~ 25 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | PG-DSO-14 | Surface Mount | Non-Inverting | Independent | 2 | IGBT | 600V | 48ns,37ns | 1.1V,1.7V | 2.3A,2.3A | ||||
Infineon Technologies |
4,972
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 14DSO
|
- | EiceDriver | 10 V ~ 25 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | PG-DSO-14 | Surface Mount | Non-Inverting | Independent | 2 | IGBT | 600V | 48ns,37ns | 1.1V,1.7V | 2.3A,2.3A | ||||
Texas Instruments |
21,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR GATE HALF BRIDGE 10WSON
|
Tape & Reel (TR) | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 118V | 15ns,15ns | 0.8V,2.2V | 1.8A,1.8A | ||||
Texas Instruments |
26,488
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR GATE HALF BRIDGE 10WSON
|
Cut Tape (CT) | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 118V | 15ns,15ns | 0.8V,2.2V | 1.8A,1.8A | ||||
Texas Instruments |
26,488
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR GATE HALF BRIDGE 10WSON
|
- | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 118V | 15ns,15ns | 0.8V,2.2V | 1.8A,1.8A | ||||
Texas Instruments |
13,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10-MSOP
|
Tape & Reel (TR) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-TFSOP,10-MSOP (0.118",3.00mm Width) | 10-VSSOP | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 118V | 600ns,600ns | 0.8V,2.2V | 1.6A,1.6A | ||||
Texas Instruments |
14,911
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10-MSOP
|
Cut Tape (CT) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-TFSOP,10-MSOP (0.118",3.00mm Width) | 10-VSSOP | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 118V | 600ns,600ns | 0.8V,2.2V | 1.6A,1.6A | ||||
Texas Instruments |
14,911
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10-MSOP
|
- | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-TFSOP,10-MSOP (0.118",3.00mm Width) | 10-VSSOP | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 118V | 600ns,600ns | 0.8V,2.2V | 1.6A,1.6A | ||||
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 150ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
7,227
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 150ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
7,227
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 150ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
12,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
HI/LO SIDE DRVR 8SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | 2 | N-Channel MOSFET | 200V | 35ns,20ns | 0.7V,2.2V | 1A,1A | ||||
Infineon Technologies |
14,762
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | 2 | N-Channel MOSFET | 200V | 35ns,20ns | 0.7V,2.2V | 1A,1A | ||||
Texas Instruments |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF-BRIDGE HV 8-SOIC
|
Tape & Reel (TR) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 118V | 600ns,600ns | 0.8V,2.2V | 1.6A,1.6A | ||||
Texas Instruments |
7,131
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE HV 8-SOIC
|
Cut Tape (CT) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 118V | 600ns,600ns | 0.8V,2.2V | 1.6A,1.6A |