- Fabricant：
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- Packaging：
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- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 3,131
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
4,500
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3 jours |
-
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MOQ: 4500 MPQ: 1
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IC GATE DRIVER 10WSON
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Tape & Reel (TR) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 118V | 600ns，600ns | 0.8V，2V | 1.6A，1.6A | ||
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Texas Instruments |
4,500
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DRIVER 10WSON
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Cut Tape (CT) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 118V | 600ns，600ns | 0.8V，2V | 1.6A，1.6A | ||
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Texas Instruments |
4,500
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DRIVER 10WSON
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- | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 118V | 600ns，600ns | 0.8V，2V | 1.6A，1.6A | ||
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Maxim Integrated |
2,500
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3 jours |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET DRIVER 8-SOIC
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Tape & Reel (TR) | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 125V | 65ns，65ns | - | 2A，2A | ||
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Maxim Integrated |
4,983
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER 8-SOIC
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Cut Tape (CT) | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 125V | 65ns，65ns | - | 2A，2A | ||
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Maxim Integrated |
4,983
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER 8-SOIC
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- | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 125V | 65ns，65ns | - | 2A，2A | ||
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Maxim Integrated |
104
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR DUAL PWR 8-SOIC
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Tube | - | 4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
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STMicroelectronics |
1,300
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRVR HALF BRDG HV W/OSC 8DIP
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Tube | - | 10 V ~ 16.6 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-Mini DIP | Through Hole | RC Input Circuit | Synchronous | 2 | IGBT，N-Channel MOSFET | 600V | - | - | 170mA，270mA | ||
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Infineon Technologies |
168
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HI/LO SIDE 600V 14-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | 2.5A，2.5A | ||
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Maxim Integrated |
150
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR DUAL PWR 8-DIP
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Tube | - | 4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
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Texas Instruments |
1,358
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR HI/LO SIDE 3A 8SOIC
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Tube | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 100V | 430ns，260ns | 2.3V，- | 3A，3A | ||
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Infineon Technologies |
3,000
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRVR SELF-OSC HALF BRG 8-DIP
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Tube | - | 10 V ~ 15.4 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | RC Input Circuit | Synchronous | 2 | N-Channel MOSFET | 600V | 120ns，50ns | - | 180mA，260mA | ||
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Renesas Electronics America Inc. |
1,649
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF BRDG 100V 8EPSOIC
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Tube | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | 2A，2A | ||
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Texas Instruments |
225
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DVR HIGH/LOW SIDE 3A 8SOIC
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Bulk | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | 3A，3A | ||
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Texas Instruments |
121
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DVR HIGH/LOW SIDE 3A 8SOPWR
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Bulk | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154"，3.90mm Width) | 8-SO PowerPad | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | 3A，3A | ||
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Infineon Technologies |
337
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET/IGBT DVR HV HS 8-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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Infineon Technologies |
1,086
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF BRIDGE 14DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Inverting，Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
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Infineon Technologies |
135
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
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Maxim Integrated |
171
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC HALF-BRIDGE MOSFET DVR 8-SOIC
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Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting，Non-Inverting | Independent | 2 | N-Channel MOSFET | 175V | 65ns，65ns | - | 2A，2A | ||
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|
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Maxim Integrated |
163
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER 12-TQFN
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Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 12-WQFN Exposed Pad | 12-TQFN (4x4) | Surface Mount | Inverting，Non-Inverting | Independent | 2 | N-Channel MOSFET | 125V | 65ns，65ns | - | 2A，2A |
