- Fabricant：
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- Packaging：
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- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 3,131
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Maxim Integrated |
392
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSF DRVR HALF BRDG HS 8-SOIC
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Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting，Non-Inverting | Independent | 2 | N-Channel MOSFET | 125V | 50ns，40ns | 0.8V，2V | 3A，3A | ||
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Renesas Electronics America Inc. |
2,362
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER FET FULL BRIDGE 20SOIC
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Tube | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Independent | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
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Renesas Electronics America Inc. |
1,263
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER FET FULL BRIDGE 20DIP
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Tube | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-PDIP | Through Hole | Non-Inverting | Synchronous | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
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Renesas Electronics America Inc. |
938
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER 3-PHASE FET 24-SOIC
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Tube | - | 7 V ~ 15 V | -40°C ~ 150°C (TJ) | 24-SOIC (0.295"，7.50mm Width) | 24-SOIC | Surface Mount | Inverting，Non-Inverting | 3-Phase | 6 | N-Channel MOSFET | 95V | 20ns，10ns | 1V，2.5V | 500mA，500mA | ||
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Renesas Electronics America Inc. |
1,899
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER FET 3PHASE N-CH 24DIP
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Tube | - | 7 V ~ 15 V | -40°C ~ 150°C (TJ) | 24-DIP (0.300"，7.62mm) | 24-PDIP | Through Hole | Inverting，Non-Inverting | 3-Phase | 6 | N-Channel MOSFET | 95V | 20ns，10ns | 1V，2.5V | 500mA，500mA | ||
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Infineon Technologies |
1,168
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF-BRIDGE 24-SSOP
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Tube | - | 11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 24-SSOP (0.209"，5.30mm Width) | 24-SSOP | Surface Mount | Non-Inverting | Independent | 2 | IGBT | 600V | 24ns，7ns | 0.8V，2V | 2A，3A | ||
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Infineon Technologies |
4,205
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF BRIDGE SGL 24SSOP
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Tube | - | 11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 24-SSOP (0.209"，5.30mm Width) | 24-SSOP | Surface Mount | Non-Inverting | Independent | 2 | IGBT | 1200V | 24ns，7ns | 0.8V，2V | 2A，3A | ||
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Maxim Integrated |
184
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET 8-SOIC
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Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 175V | 65ns，65ns | 0.8V，2V | 2A，2A | ||
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Infineon Technologies |
2,050
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER BRIDGE 3-PHASE 28-SOIC
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Inverting | Independent | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.2V | 250mA，500mA | ||
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Infineon Technologies |
222
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-DIP (0.600"，15.24mm) | 28-PDIP | Through Hole | Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
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Infineon Technologies |
1,494
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER BRIDGE 3-PHASE 28-SOIC
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 3-Phase | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
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Power Integrations |
130
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL GATE DRIVER
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Tray | SCALE-2 | 14.5 V ~ 15.5 V | -20°C ~ 85°C (TA) | Module | Module | Surface Mount | - | Independent | 2 | IGBT | 1200V | 5ns，10ns | - | 8A，15A | ||
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Power Integrations |
107
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL GATE DRIVER 6A
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Tray | SCALE-1 | 15V | -40°C ~ 85°C (TA) | Module | Module | Surface Mount | - | - | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 100ns，80ns | - | 6A，6A | ||
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Infineon Technologies |
3,000
|
3 jours |
-
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MOQ: 3000 MPQ: 1
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IC GATE DRVR HI/LOW SIDE 10DFN
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Tape & Reel (TR) | - | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 35V | 21ns，18ns | 0.8V，1V | 3A，4A | ||
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Infineon Technologies |
5,859
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
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Cut Tape (CT) | - | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 35V | 21ns，18ns | 0.8V，1V | 3A，4A | ||
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Infineon Technologies |
5,859
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
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- | - | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 35V | 21ns，18ns | 0.8V，1V | 3A，4A | ||
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|
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Infineon Technologies |
2,500
|
3 jours |
-
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MOQ: 2500 MPQ: 1
|
IC MOSFET IGBT DRIVER 8SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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Infineon Technologies |
2,537
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET IGBT DRIVER 8SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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|
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Infineon Technologies |
2,537
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET IGBT DRIVER 8SOIC
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- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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|
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Infineon Technologies |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8DSO
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Tape & Reel (TR) | EiceDriver | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8 | Surface Mount | Non-Inverting | Independent | 2 | IGBT | 600V | 48ns，24ns | 1.1V，1.7V | 500mA，500mA |
