Voltage - Supply:
Package / Case:
Supplier Device Package:
Number of Drivers:
Rise / Fall Time (Typ):
Découvrez les produits 3,131
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IR2112SPBF
Infineon Technologies
602
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR HI/LO SIDE 16SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Non-Inverting Independent 2 IGBT,N-Channel MOSFET 600V 80ns,40ns 6V,9.5V 250mA,500mA
IR2184PBF
Infineon Technologies
1,169
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Independent 2 IGBT,N-Channel MOSFET 600V 40ns,20ns 0.8V,2.7V 1.9A,2.3A
IR2184SPBF
Infineon Technologies
427
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent 2 IGBT,N-Channel MOSFET 600V 40ns,20ns 0.8V,2.7V 1.9A,2.3A
IRS2336DMTRPBF
Infineon Technologies
3,000
3 jours
-
MOQ: 3000  MPQ: 1
IC GATE DRIVER HV 3PHASE 48-MLPQ
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 48-VFQFN Exposed Pad,34 Leads 48-MLPQ,34 Leads (7x7) Surface Mount Inverting 3-Phase 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,2.5V 200mA,350mA
IRS2336DMTRPBF
Infineon Technologies
3,351
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER HV 3PHASE 48-MLPQ
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 48-VFQFN Exposed Pad,34 Leads 48-MLPQ,34 Leads (7x7) Surface Mount Inverting 3-Phase 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,2.5V 200mA,350mA
IRS2336DMTRPBF
Infineon Technologies
3,351
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER HV 3PHASE 48-MLPQ
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 48-VFQFN Exposed Pad,34 Leads 48-MLPQ,34 Leads (7x7) Surface Mount Inverting 3-Phase 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,2.5V 200mA,350mA
IR2011PBF
Infineon Technologies
2,599
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting Independent 2 N-Channel MOSFET 200V 35ns,20ns 0.7V,2.2V 1A,1A
IR2302PBF
Infineon Technologies
2,050
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HALF BRIDGE 8DIP
Tube - 5 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Synchronous 2 IGBT,N-Channel MOSFET 600V 130ns,50ns 0.8V,2.9V 200mA,350mA
IR2010PBF
Infineon Technologies
1,189
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 14DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm) 14-DIP Through Hole Non-Inverting Independent 2 IGBT,N-Channel MOSFET 200V 10ns,15ns 6V,9.5V 3A,3A
IR21844SPBF
Infineon Technologies
1,924
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 14SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 14-SOIC (0.154",3.90mm Width) 14-SOIC Surface Mount Non-Inverting Independent 2 IGBT,N-Channel MOSFET 600V 40ns,20ns 0.8V,2.7V 1.9A,2.3A
IR2183PBF
Infineon Technologies
195
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HALF BRIDGE 8DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting,Non-Inverting Independent 2 IGBT,N-Channel MOSFET 600V 40ns,20ns 0.8V,2.7V 1.9A,2.3A
HIP4082IBZ
Renesas Electronics America Inc.
918
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER FET H-BRIDGE 16SOIC
Tube - 8.5 V ~ 15 V -55°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC Surface Mount Non-Inverting Independent 4 N-Channel MOSFET 95V 9ns,9ns 1V,2.5V 1.4A,1.3A
HIP4082IPZ
Renesas Electronics America Inc.
672
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER FET H-BRIDGE 16DIP
Tube - 8.5 V ~ 15 V -55°C ~ 150°C (TJ) 16-DIP (0.300",7.62mm) 16-PDIP Through Hole Non-Inverting Independent 4 N-Channel MOSFET 95V 9ns,9ns 1V,2.5V 1.4A,1.3A
UCC27211D
Texas Instruments
3,470
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HIGH/LOW SIDE 4A 8SOIC
Tube - 8 V ~ 17 V -40°C ~ 140°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent 2 N-Channel MOSFET 120V 7.2ns,5.5ns 1.3V,2.7V 4A,4A
UCC27211DDA
Texas Instruments
3,062
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HIGH/LOW SIDE 4A 8SOPWR
Tube - 8 V ~ 17 V -40°C ~ 140°C (TJ) 8-PowerSOIC (0.154",3.90mm Width) 8-SO PowerPad Surface Mount Non-Inverting Independent 2 N-Channel MOSFET 120V 7.2ns,5.5ns 1.3V,2.8V 4A,4A
IRS2453DPBF
Infineon Technologies
1,460
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER FULL SELF OSC 14-DIP
Tube - 10 V ~ 15.6 V -25°C ~ 125°C (TJ) 14-DIP (0.300",7.62mm) 14-DIP Through Hole RC Input Circuit Synchronous 4 N-Channel MOSFET 600V 120ns,50ns 4.7V,9.3V 180mA,260mA
ISL2111ABZ
Renesas Electronics America Inc.
2,481
3 jours
-
MOQ: 1  MPQ: 1
IC MSFT DVR HALF-BRG 100V 8-SOIC
Tube - 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent 2 N-Channel MOSFET 114V 9ns,7.5ns 1.4V,2.2V 3A,4A
ISL2111ARTZ
Renesas Electronics America Inc.
963
3 jours
-
MOQ: 1  MPQ: 1
IC MSFT DVR HALF-BRG 100V 10TDFN
Tube - 8 V ~ 14 V -40°C ~ 125°C (TJ) 10-WDFN Exposed Pad 10-TDFN (4x4) Surface Mount Non-Inverting Independent 2 N-Channel MOSFET 114V 9ns,7.5ns 1.4V,2.2V 3A,4A
IR2113PBF
Infineon Technologies
1,792
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR HI/LO SIDE 14-DIP
Tube - 3.3 V ~ 20 V -40°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm) 14-DIP Through Hole Non-Inverting Independent 2 IGBT,N-Channel MOSFET 600V 25ns,17ns 6V,9.5V 2A,2A
IR2113SPBF
Infineon Technologies
1,498
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR HI/LO SIDE 16SOIC
Tube - 3.3 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Non-Inverting Independent 2 IGBT,N-Channel MOSFET 600V 25ns,17ns 6V,9.5V 2A,2A