- Fabricant:
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- Packaging:
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- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Input Type:
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- Channel Type:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 3,131
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
602
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 6V,9.5V | 250mA,500mA | ||||
Infineon Technologies |
1,169
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.7V | 1.9A,2.3A | ||||
Infineon Technologies |
427
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.7V | 1.9A,2.3A | ||||
Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER HV 3PHASE 48-MLPQ
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 48-VFQFN Exposed Pad,34 Leads | 48-MLPQ,34 Leads (7x7) | Surface Mount | Inverting | 3-Phase | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
Infineon Technologies |
3,351
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HV 3PHASE 48-MLPQ
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 48-VFQFN Exposed Pad,34 Leads | 48-MLPQ,34 Leads (7x7) | Surface Mount | Inverting | 3-Phase | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
Infineon Technologies |
3,351
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HV 3PHASE 48-MLPQ
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 48-VFQFN Exposed Pad,34 Leads | 48-MLPQ,34 Leads (7x7) | Surface Mount | Inverting | 3-Phase | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
Infineon Technologies |
2,599
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | 2 | N-Channel MOSFET | 200V | 35ns,20ns | 0.7V,2.2V | 1A,1A | ||||
Infineon Technologies |
2,050
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8DIP
|
Tube | - | 5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Synchronous | 2 | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
1,189
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300",7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 200V | 10ns,15ns | 6V,9.5V | 3A,3A | ||||
Infineon Technologies |
1,924
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.7V | 1.9A,2.3A | ||||
Infineon Technologies |
195
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting,Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.7V | 1.9A,2.3A | ||||
Renesas Electronics America Inc. |
918
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET H-BRIDGE 16SOIC
|
Tube | - | 8.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154",3.90mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | 4 | N-Channel MOSFET | 95V | 9ns,9ns | 1V,2.5V | 1.4A,1.3A | ||||
Renesas Electronics America Inc. |
672
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET H-BRIDGE 16DIP
|
Tube | - | 8.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 16-DIP (0.300",7.62mm) | 16-PDIP | Through Hole | Non-Inverting | Independent | 4 | N-Channel MOSFET | 95V | 9ns,9ns | 1V,2.5V | 1.4A,1.3A | ||||
Texas Instruments |
3,470
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8SOIC
|
Tube | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 120V | 7.2ns,5.5ns | 1.3V,2.7V | 4A,4A | ||||
Texas Instruments |
3,062
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8SOPWR
|
Tube | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154",3.90mm Width) | 8-SO PowerPad | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 120V | 7.2ns,5.5ns | 1.3V,2.8V | 4A,4A | ||||
Infineon Technologies |
1,460
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FULL SELF OSC 14-DIP
|
Tube | - | 10 V ~ 15.6 V | -25°C ~ 125°C (TJ) | 14-DIP (0.300",7.62mm) | 14-DIP | Through Hole | RC Input Circuit | Synchronous | 4 | N-Channel MOSFET | 600V | 120ns,50ns | 4.7V,9.3V | 180mA,260mA | ||||
Renesas Electronics America Inc. |
2,481
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MSFT DVR HALF-BRG 100V 8-SOIC
|
Tube | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 114V | 9ns,7.5ns | 1.4V,2.2V | 3A,4A | ||||
Renesas Electronics America Inc. |
963
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MSFT DVR HALF-BRG 100V 10TDFN
|
Tube | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-TDFN (4x4) | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 114V | 9ns,7.5ns | 1.4V,2.2V | 3A,4A | ||||
Infineon Technologies |
1,792
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HI/LO SIDE 14-DIP
|
Tube | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300",7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,17ns | 6V,9.5V | 2A,2A | ||||
Infineon Technologies |
1,498
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
Tube | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,17ns | 6V,9.5V | 2A,2A |