- Fabricant：
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- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 3,131
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
4,355
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC HALF BRIDGE DRIVER 8-SOIC
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Infineon Technologies |
2,820
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF BRIDGE OSC 8DIP
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Tube | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | RC Input Circuit | Synchronous | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | - | ||
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Infineon Technologies |
2,624
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 8DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
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Infineon Technologies |
1,680
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER FULL SELF OSC 14-SOIC
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Tube | - | 10 V ~ 15.6 V | -25°C ~ 125°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | RC Input Circuit | Synchronous | 4 | N-Channel MOSFET | 600V | 120ns，50ns | 4.7V，9.3V | 180mA，260mA | ||
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Texas Instruments |
7,750
|
3 jours |
-
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MOQ: 250 MPQ: 1
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IC DVR HIGH/LOW SIDE 3A 8VSON
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Tape & Reel (TR) | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-VDFN Exposed Pad | 8-VSON (4x4) | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | 3A，3A | ||
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Texas Instruments |
9,091
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DVR HIGH/LOW SIDE 3A 8VSON
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Cut Tape (CT) | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-VDFN Exposed Pad | 8-VSON (4x4) | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | 3A，3A | ||
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Texas Instruments |
9,091
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DVR HIGH/LOW SIDE 3A 8VSON
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- | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-VDFN Exposed Pad | 8-VSON (4x4) | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | 3A，3A | ||
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Texas Instruments |
250
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3 jours |
-
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MOQ: 250 MPQ: 1
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IC DVR HIGH/LOW SIDE 3A 9SON
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Tape & Reel (TR) | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 10-VFDFN Exposed Pad，9 Leads | 9-VSON (3x3) | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | 3A，3A | ||
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Texas Instruments |
1,727
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DVR HIGH/LOW SIDE 3A 9SON
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Cut Tape (CT) | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 10-VFDFN Exposed Pad，9 Leads | 9-VSON (3x3) | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | 3A，3A | ||
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Texas Instruments |
1,727
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DVR HIGH/LOW SIDE 3A 9SON
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- | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 10-VFDFN Exposed Pad，9 Leads | 9-VSON (3x3) | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | 3A，3A | ||
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Infineon Technologies |
3,137
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC HALF BRDG DVR SELF-OSC 8SOIC
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Tube | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | RC Input Circuit | Synchronous | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | - | ||
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Infineon Technologies |
1,056
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 8SOIC
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
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Infineon Technologies |
4,444
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF BRIDGE 600V 8SOIC
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.5V | 1.9A，2.3A | ||
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pSemi |
500
|
3 jours |
-
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MOQ: 500 MPQ: 1
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HIGH-SPEED FET DRIVER 33 MHZ
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Tape & Reel (TR) | - | 4 V ~ 5.5 V | -40°C ~ 125°C (TJ) | Die | Die | Surface Mount | - | Synchronous | 2 | N-Channel MOSFET | 100V | 2.5ns，2.5ns | - | 2A，4A | ||
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pSemi |
615
|
3 jours |
-
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MOQ: 1 MPQ: 1
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HIGH-SPEED FET DRIVER 33 MHZ
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Cut Tape (CT) | - | 4 V ~ 5.5 V | -40°C ~ 125°C (TJ) | Die | Die | Surface Mount | - | Synchronous | 2 | N-Channel MOSFET | 100V | 2.5ns，2.5ns | - | 2A，4A | ||
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pSemi |
615
|
3 jours |
-
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MOQ: 1 MPQ: 1
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HIGH-SPEED FET DRIVER 33 MHZ
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- | - | 4 V ~ 5.5 V | -40°C ~ 125°C (TJ) | Die | Die | Surface Mount | - | Synchronous | 2 | N-Channel MOSFET | 100V | 2.5ns，2.5ns | - | 2A，4A | ||
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Texas Instruments |
3,503
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC 4.5A HS 8SOIC
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Tube | - | 4 V ~ 6.85 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 33V | 17ns，12ns | - | 3A，4.5A | ||
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Texas Instruments |
502
|
3 jours |
-
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MOQ: 250 MPQ: 1
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IC HALF-BRIDGE GATE DRVR 10WSON
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Tape & Reel (TR) | - | 7 V ~ 17 V | -40°C ~ 140°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 100V | 7.8ns，6ns | 1.2V，2.55V | 4A，4A | ||
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Texas Instruments |
1,587
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF-BRIDGE GATE DRVR 10WSON
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Cut Tape (CT) | - | 7 V ~ 17 V | -40°C ~ 140°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 100V | 7.8ns，6ns | 1.2V，2.55V | 4A，4A | ||
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|
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Texas Instruments |
1,587
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF-BRIDGE GATE DRVR 10WSON
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- | - | 7 V ~ 17 V | -40°C ~ 140°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 100V | 7.8ns，6ns | 1.2V，2.55V | 4A，4A |
