- Fabricant:
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- Packaging:
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- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Input Type:
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- Channel Type:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 3,131
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
1,092
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 70ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
1,925
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 200ns,100ns | 0.8V,2.3V | 60mA,130mA | ||||
Infineon Technologies |
18,868
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRDG SELF-OSC 8-DIP
|
Tube | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | RC Input Circuit | Synchronous | 2 | N-Channel MOSFET | 600V | 80ns,45ns | - | - | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER N-BRIDGE 24SSOP
|
Tape & Reel (TR) | - | 7 V ~ 34 V | -40°C ~ 150°C (TJ) | 24-LSSOP (0.154",3.90mm Width) Exposed Pad | PG-SSOP-24 | Surface Mount | Non-Inverting | Synchronous | 4 | N-Channel MOSFET | 55V | 250ns,200ns | 1V,2V | - | ||||
Infineon Technologies |
4,322
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER N-BRIDGE 24SSOP
|
Cut Tape (CT) | - | 7 V ~ 34 V | -40°C ~ 150°C (TJ) | 24-LSSOP (0.154",3.90mm Width) Exposed Pad | PG-SSOP-24 | Surface Mount | Non-Inverting | Synchronous | 4 | N-Channel MOSFET | 55V | 250ns,200ns | 1V,2V | - | ||||
Infineon Technologies |
4,322
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER N-BRIDGE 24SSOP
|
- | - | 7 V ~ 34 V | -40°C ~ 150°C (TJ) | 24-LSSOP (0.154",3.90mm Width) Exposed Pad | PG-SSOP-24 | Surface Mount | Non-Inverting | Synchronous | 4 | N-Channel MOSFET | 55V | 250ns,200ns | 1V,2V | - | ||||
Infineon Technologies |
2,498
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE SELF OSC 8DIP
|
Tube | - | 10 V ~ 15.4 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | RC Input Circuit | Synchronous | 2 | N-Channel MOSFET | 600V | 120ns,50ns | - | 180mA,260mA | ||||
Texas Instruments |
12,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154",3.90mm Width) | 8-SO PowerPad | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 120V | 8ns,7ns | 0.8V,2.5V | 3A,3A | ||||
Texas Instruments |
16,709
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
|
Cut Tape (CT) | Automotive,AEC-Q100 | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154",3.90mm Width) | 8-SO PowerPad | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 120V | 8ns,7ns | 0.8V,2.5V | 3A,3A | ||||
Texas Instruments |
16,709
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
|
- | Automotive,AEC-Q100 | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154",3.90mm Width) | 8-SO PowerPad | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 120V | 8ns,7ns | 0.8V,2.5V | 3A,3A | ||||
Texas Instruments |
1,510
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE 100V 1A 8SOIC
|
Tube | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 118V | 15ns,15ns | 0.8V,2.2V | 1A,1A | ||||
Infineon Technologies |
2,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 6V,9.5V | 250mA,500mA | ||||
Infineon Technologies |
2,308
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 6V,9.5V | 250mA,500mA | ||||
Infineon Technologies |
2,308
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 6V,9.5V | 250mA,500mA | ||||
Texas Instruments |
2,858
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8-SOIC
|
Tube | - | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 33V | 10ns,10ns | - | - | ||||
Infineon Technologies |
11,772
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
8,526
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 1.9A,2.3A | ||||
Infineon Technologies |
2,998
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 600V 8DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting,Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,50ns | 0.8V,3V | 210mA,360mA | ||||
Infineon Technologies |
3,476
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LOW SIDE 8-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | 2 | N-Channel MOSFET | 200V | 25ns,15ns | 0.8V,2.7V | 1A,1A | ||||
Infineon Technologies |
1,309
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,50ns | 0.8V,3V | 210mA,360mA |