- Fabricant:
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- Packaging:
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- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Input Type:
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- Channel Type:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 3,131
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Texas Instruments |
6,729
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8SON
|
- | - | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-SON (3x3) | Surface Mount | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 33V | 10ns,10ns | - | - | ||||
Texas Instruments |
3,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10WSON
|
Tape & Reel (TR) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 118V | 600ns,600ns | 0.8V,2.2V | 1.6A,1.6A | ||||
Texas Instruments |
5,544
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10WSON
|
Cut Tape (CT) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 118V | 600ns,600ns | 0.8V,2.2V | 1.6A,1.6A | ||||
Texas Instruments |
5,544
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10WSON
|
- | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 118V | 600ns,600ns | 0.8V,2.2V | 1.6A,1.6A | ||||
Infineon Technologies |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 8.3V,12.6V | 250mA,500mA | ||||
Infineon Technologies |
11,376
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 8.3V,12.6V | 250mA,500mA | ||||
Infineon Technologies |
11,376
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 8.3V,12.6V | 250mA,500mA | ||||
Texas Instruments |
1,500
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC MOSFET DRVR SYNC 8WSON
|
Tape & Reel (TR) | - | 4.5 V ~ 5.5 V | -40°C ~ 105°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (2x2) | Surface Mount | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 34V | 30ns,8ns | 0.6V,2.65V | - | ||||
Texas Instruments |
3,775
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SYNC 8WSON
|
Cut Tape (CT) | - | 4.5 V ~ 5.5 V | -40°C ~ 105°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (2x2) | Surface Mount | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 34V | 30ns,8ns | 0.6V,2.65V | - | ||||
Texas Instruments |
3,775
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SYNC 8WSON
|
- | - | 4.5 V ~ 5.5 V | -40°C ~ 105°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (2x2) | Surface Mount | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 34V | 30ns,8ns | 0.6V,2.65V | - | ||||
Texas Instruments |
4,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10WSON
|
Tape & Reel (TR) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Inverting,Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 118V | 600ns,600ns | 0.8V,2.2V | 1.6A,1.6A | ||||
Texas Instruments |
6,686
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10WSON
|
Cut Tape (CT) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Inverting,Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 118V | 600ns,600ns | 0.8V,2.2V | 1.6A,1.6A | ||||
Texas Instruments |
6,686
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10WSON
|
- | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Inverting,Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 118V | 600ns,600ns | 0.8V,2.2V | 1.6A,1.6A | ||||
Infineon Technologies |
2,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,17ns | 6V,9.5V | 2.5A,2.5A | ||||
Infineon Technologies |
2,133
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,17ns | 6V,9.5V | 2.5A,2.5A | ||||
Infineon Technologies |
2,133
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,17ns | 6V,9.5V | 2.5A,2.5A | ||||
STMicroelectronics |
1,820
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 8-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | Inverting,Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 75ns,35ns | 1.1V,1.9V | 290mA,430mA | ||||
STMicroelectronics |
1,049
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE HV 8-SOIC
|
Tube | - | 14.6 V ~ 16.6 V | -45°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | Inverting | Synchronous | 2 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 1.5V,3.6V | 400mA,650mA | ||||
Texas Instruments |
6,840
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE 90V 1A 8-SOIC
|
Tube | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 108V | 15ns,15ns | 0.8V,2.2V | 1A,1A | ||||
STMicroelectronics |
1,858
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE HV 8-SOIC
|
Tube | - | 17V (Max) | -45°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 1.5V,3.6V | 400mA,650mA |