- Fabricant:
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- Packaging:
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- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Input Type:
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- Channel Type:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 3,131
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
9,490
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 14-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 1.9A,2.3A | ||||
Infineon Technologies |
2,891
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
Tube | - | 5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | 2 | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Renesas Electronics America Inc. |
3,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER 3PHASE 80V 0.5A 24SOIC
|
Tape & Reel (TR) | - | 7 V ~ 15 V | -40°C ~ 150°C (TJ) | 24-SOIC (0.295",7.50mm Width) | 24-SOIC | Surface Mount | Inverting,Non-Inverting | 3-Phase | 6 | N-Channel MOSFET | 95V | 20ns,10ns | 1V,2.5V | 500mA,500mA | ||||
Renesas Electronics America Inc. |
3,781
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER 3PHASE 80V 0.5A 24SOIC
|
Cut Tape (CT) | - | 7 V ~ 15 V | -40°C ~ 150°C (TJ) | 24-SOIC (0.295",7.50mm Width) | 24-SOIC | Surface Mount | Inverting,Non-Inverting | 3-Phase | 6 | N-Channel MOSFET | 95V | 20ns,10ns | 1V,2.5V | 500mA,500mA | ||||
Renesas Electronics America Inc. |
3,781
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER 3PHASE 80V 0.5A 24SOIC
|
- | - | 7 V ~ 15 V | -40°C ~ 150°C (TJ) | 24-SOIC (0.295",7.50mm Width) | 24-SOIC | Surface Mount | Inverting,Non-Inverting | 3-Phase | 6 | N-Channel MOSFET | 95V | 20ns,10ns | 1V,2.5V | 500mA,500mA | ||||
Infineon Technologies |
1,398
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDG 600V 8SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.7V | 1.9A,2.3A | ||||
Texas Instruments |
7,020
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE HV 8SOPWRPAD
|
Tube | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-PowerSOIC (0.154",3.90mm Width) | 8-SO PowerPad | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 118V | 430ns,260ns | 2.3V,- | 3A,3A | ||||
Texas Instruments |
2,297
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE HV 8-SOIC
|
Tube | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 118V | 600ns,600ns | 0.8V,2.2V | 1.6A,1.6A | ||||
Infineon Technologies |
2,354
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 3-Phase | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,3V | 200mA,350mA | ||||
Infineon Technologies |
8,823
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
Tube | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 500V | 25ns,17ns | 6V,9.5V | 2A,2A | ||||
Renesas Electronics America Inc. |
1,614
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL BRIDGE 20DIP
|
Tube | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-DIP (0.300",7.62mm) | 20-PDIP | Through Hole | Non-Inverting | Independent | 4 | N-Channel MOSFET | 95V | 10ns,10ns | 1V,2.5V | 2.6A,2.4A | ||||
Infineon Technologies |
1,784
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
Tube | - | 12 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 1200V | 25ns,17ns | 6V,9.5V | 2A,2.5A | ||||
Infineon Technologies |
2,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 3-Phase | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | 250mA,500mA | ||||
Infineon Technologies |
2,088
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 3-Phase | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | 250mA,500mA | ||||
Infineon Technologies |
2,088
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 3-Phase | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | 250mA,500mA | ||||
Infineon Technologies |
1,697
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-DIP
|
Tube | - | 12 V ~ 20 V | -55°C ~ 150°C (TJ) | 14-DIP (0.300",7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | 2 | IGBT,N-Channel MOSFET | 1200V | 25ns,17ns | 6V,9.5V | 2A,2.5A | ||||
Maxim Integrated |
384
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 12-TQFN
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 12-WQFN Exposed Pad | 12-TQFN (4x4) | Surface Mount | Inverting,Non-Inverting | Independent | 2 | N-Channel MOSFET | 125V | 65ns,65ns | 0.8V,2V | 2A,2A | ||||
Power Integrations |
558
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL GATE DRIVER 6A
|
Tray | SCALE-2 | 14.5 V ~ 15.5 V | -40°C ~ 105°C (TA) | Module | Module | Surface Mount | - | Independent | 2 | IGBT | 1200V | 20ns,13ns | - | 6A,6A | ||||
Power Integrations |
345
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL GATE DRIVER
|
Tray | SCALE-2 | 14.5 V ~ 15.5 V | -20°C ~ 85°C (TA) | Module | Module | Surface Mount | - | Independent | 2 | IGBT | 1200V | 5ns,10ns | - | 8A,15A | ||||
Power Integrations |
76
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL GATE DRIVER
|
Tray | SCALE-2 | 14.5 V ~ 15.5 V | -20°C ~ 85°C (TA) | Module | Module | Surface Mount | - | Independent | 2 | IGBT | 1700V | 5ns,10ns | - | 8A,15A |