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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 1,823
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Powerex Inc. |
Enquête
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MOQ: 10 MPQ: 1
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IC IGBT GATE DVR
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Bulk | - | 14.2 V ~ 15.8 V | -20°C ~ 60°C (TA) | 30-SIP Module，21 Leads | 21-SIP | Through Hole | Non-Inverting | Low-Side | 1 | IGBT | - | 300ns，300ns | - | 12A，12A | ||
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Linear Technology/Analog Devices |
Enquête
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-
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MOQ: 0 MPQ: 1
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IC MOSFET DRIVER HIGH-SIDE 8-DIP
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | High-Side | 1 | N-Channel MOSFET | - | - | 0.8V，2V | - | |||
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IXYS |
Enquête
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- |
-
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MOQ: 25 MPQ: 1
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IC LOW SIDE DRIVER 16DIP
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Tube | ISOSMART | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm) | 16-DIP | Through Hole | Non-Inverting | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | 1200V | 15ns，15ns | 1V，3.65V | 2A，2A | |||
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Microchip Technology |
Enquête
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-
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MOQ: 56 MPQ: 1
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IC CMOS DRVR W/BOOST 1.5A 8-CDIP
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Tube | - | 4 V ~ 6 V | -55°C ~ 125°C (TA) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Inverting | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 33ns，27ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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-
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MOQ: 56 MPQ: 1
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IC MOSFET DRIVER 6A HS 8CDIP
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Tube | - | 7 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Inverting | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 23ns，25ns | 0.8V，2.4V | 6A，6A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 168 MPQ: 1
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IC MOSFET DRIVER 30V 1.5A 8-CDIP
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Tube | - | 4.5 V ~ 30 V | -40°C ~ 150°C (TJ) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Inverting | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，33ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 168 MPQ: 1
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IC MOSFET DRIVER 30V 1.5A 8-CDIP
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Tube | - | 4.5 V ~ 30 V | -40°C ~ 150°C (TJ) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Non-Inverting | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，33ns | 0.8V，2.4V | 1.5A，1.5A | |||
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IXYS |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
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IC MOSFET DRVR LS 8A SGL 5TO-220
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Tube | - | 4.5 V ~ 25 V | -40°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Non-Inverting | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 14ns，15ns | 0.8V，3.5V | 8A，8A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
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IC MOSFET DRV LS 14A SGL 5TO-220
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Non-Inverting | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，22ns | 0.8V，3.5V | 14A，14A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 46 MPQ: 1
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IC LOW SIDE DRIVER 16SOIC
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Tube | ISOSMART | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | 1200V | 15ns，15ns | 1V，3.65V | 2A，2A | |||
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IXYS |
Enquête
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- |
-
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MOQ: 25 MPQ: 1
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IC HIGH SIDE DRIVER 16DIP
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Tube | ISOSMART | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm) | 16-DIP | Through Hole | Non-Inverting | High-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | 1200V | 15ns，15ns | 1V，3.65V | 2A，2A | |||
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IXYS |
Enquête
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- |
-
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MOQ: 46 MPQ: 1
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IC HIGH SIDE DRIVER 16SOIC
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Tube | ISOSMART | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | High-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | 1200V | 15ns，15ns | 1V，3.65V | 2A，2A | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC DRIVER GATE SINGLE IGBT 8DIP
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Tube | - | 11 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 17ns，17ns | 1.2V，3.2V | 1A，2A | |||
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ON Semiconductor |
Enquête
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-
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MOQ: 2500 MPQ: 1
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IC DRIVER GATE SINGLE IGBT 8SOIC
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Tape & Reel (TR) | - | 11 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 17ns，17ns | 1.2V，3.2V | 1A，2A | |||
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ON Semiconductor |
Enquête
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-
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MOQ: 1 MPQ: 1
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IC DRIVER GATE SINGLE IGBT 8SOIC
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Cut Tape (CT) | - | 11 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 17ns，17ns | 1.2V，3.2V | 1A，2A | |||
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ON Semiconductor |
Enquête
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-
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MOQ: 2500 MPQ: 1
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IC PREDRIVER IGBT IGNITION 8SOIC
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Tape & Reel (TR) | - | 7 V ~ 10 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Low-Side | 1 | IGBT，N-Channel MOSFET | - | - | - | - | |||
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ON Semiconductor |
Enquête
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-
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MOQ: 100 MPQ: 1
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IC PREDRIVER IGBT IGNITION 8DIP
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Tube | - | 7 V ~ 10 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Low-Side | 1 | IGBT，N-Channel MOSFET | - | - | - | - | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 294 MPQ: 1
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IC DRIVER GATE SINGLE IGBT 8SOIC
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Tube | - | 11 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 17ns，17ns | 1.2V，3.2V | 1A，2A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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IC MOSFET DRIVER 6A HS 8DFN
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Tape & Reel (TR) | - | 7 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-EP (3x3) | Surface Mount | Inverting | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 23ns，25ns | 0.8V，2.4V | 6A，6A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 300 MPQ: 1
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IC MOSFET DRIVER 6A HS 8DFN
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Tube | - | 7 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-EP (3x3) | Surface Mount | Inverting | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 23ns，25ns | 0.8V，2.4V | 6A，6A |
