Découvrez les produits 18
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Input Type Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IR2125STRPBF
Infineon Technologies
2,000
3 jours
-
MOQ: 1000  MPQ: 1
IC MOSFET DRIVER LIMITING 16SOIC
Tape & Reel (TR) - 0 V ~ 18 V -40°C ~ 150°C (TJ) Non-Inverting High-Side IGBT,N-Channel MOSFET 500V 43ns,26ns 0.8V,2.2V 1.6A,3.3A
IR2125STRPBF
Infineon Technologies
2,466
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER LIMITING 16SOIC
Cut Tape (CT) - 0 V ~ 18 V -40°C ~ 150°C (TJ) Non-Inverting High-Side IGBT,N-Channel MOSFET 500V 43ns,26ns 0.8V,2.2V 1.6A,3.3A
IR2125STRPBF
Infineon Technologies
2,466
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER LIMITING 16SOIC
- - 0 V ~ 18 V -40°C ~ 150°C (TJ) Non-Inverting High-Side IGBT,N-Channel MOSFET 500V 43ns,26ns 0.8V,2.2V 1.6A,3.3A
IR2125SPBF
Infineon Technologies
2,077
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER LIMITING 1CHAN 16-SOIC
Tube - 0 V ~ 18 V -40°C ~ 150°C (TJ) Non-Inverting High-Side IGBT,N-Channel MOSFET 500V 43ns,26ns 0.8V,2.2V 1.6A,3.3A
UC3710DW
Texas Instruments
235
3 jours
-
MOQ: 1  MPQ: 1
IC HIGH CURRENT FET DRVR 16-SOIC
Tube - 4.7 V ~ 18 V -55°C ~ 150°C (TJ) Inverting,Non-Inverting Low-Side IGBT,N-Channel MOSFET - 85ns,85ns 0.8V,2V 6A,6A
UC3710DWG4
Texas Instruments
Enquête
-
-
MOQ: 80  MPQ: 1
IC HIGH CURRENT FET DRVR 16-SOIC
Tube - 4.7 V ~ 18 V -55°C ~ 150°C (TJ) Inverting,Non-Inverting Low-Side IGBT,N-Channel MOSFET - 85ns,85ns 0.8V,2V 6A,6A
IR2125S
Infineon Technologies
Enquête
-
-
MOQ: 135  MPQ: 1
IC MOSFET DRIVER LIMITING 16SOIC
Tube - 0 V ~ 18 V -40°C ~ 150°C (TJ) Non-Inverting High-Side IGBT,N-Channel MOSFET 500V 43ns,26ns 0.8V,2.2V 1.6A,3.3A
IR2125STR
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC MOSFET DRIVER LIMITING 16SOIC
Tape & Reel (TR) - 0 V ~ 18 V -40°C ~ 150°C (TJ) Non-Inverting High-Side IGBT,N-Channel MOSFET 500V 43ns,26ns 0.8V,2.2V 1.6A,3.3A
TC4626COE
Microchip Technology
Enquête
-
-
MOQ: 188  MPQ: 1
IC MOSFET DVR INV 1.5A 16SOIC
Tube - 4 V ~ 6 V 0°C ~ 70°C (TA) Inverting High-Side or Low-Side N-Channel,P-Channel MOSFET - 33ns,27ns 0.8V,2.4V 1.5A,1.5A
TC4627COE
Microchip Technology
Enquête
-
-
MOQ: 188  MPQ: 1
IC MOSFET DRIVER 1.5A 16SOIC
Tube - 4 V ~ 6 V 0°C ~ 70°C (TA) Non-Inverting High-Side or Low-Side N-Channel,P-Channel MOSFET - 33ns,27ns 0.8V,2.4V 1.5A,1.5A
TC4626COE713
Microchip Technology
Enquête
-
-
MOQ: 1000  MPQ: 1
IC MOSFET DVR INV 1.5A 16SOIC
Tape & Reel (TR) - 4 V ~ 6 V 0°C ~ 70°C (TA) Inverting High-Side or Low-Side N-Channel,P-Channel MOSFET - 33ns,27ns 0.8V,2.4V 1.5A,1.5A
TC4627COE713
Microchip Technology
Enquête
-
-
MOQ: 1000  MPQ: 1
IC MOSFET DRIVER 1.5A 16SOIC
Tape & Reel (TR) - 4 V ~ 6 V 0°C ~ 70°C (TA) Non-Inverting High-Side or Low-Side N-Channel,P-Channel MOSFET - 33ns,27ns 0.8V,2.4V 1.5A,1.5A
TC4626EOE713
Microchip Technology
Enquête
-
-
MOQ: 1000  MPQ: 1
IC MOSFET DVR INV 1.5A 16SOIC
Tape & Reel (TR) - 4 V ~ 6 V -40°C ~ 85°C (TA) Inverting High-Side or Low-Side N-Channel,P-Channel MOSFET - 33ns,27ns 0.8V,2.4V 1.5A,1.5A
TC4627EOE713
Microchip Technology
Enquête
-
-
MOQ: 1000  MPQ: 1
IC MOSFET DRIVER 1.5A 16SOIC
Tape & Reel (TR) - 4 V ~ 6 V -40°C ~ 85°C (TA) Non-Inverting High-Side or Low-Side N-Channel,P-Channel MOSFET - 33ns,27ns 0.8V,2.4V 1.5A,1.5A
TC4627EOE
Microchip Technology
Enquête
-
-
MOQ: 188  MPQ: 1
IC MOSFET DRIVER 1.5A 16SOIC
Tube - 4 V ~ 6 V -40°C ~ 85°C (TA) Non-Inverting High-Side or Low-Side N-Channel,P-Channel MOSFET - 33ns,27ns 0.8V,2.4V 1.5A,1.5A
TC4626EOE
Microchip Technology
Enquête
-
-
MOQ: 188  MPQ: 1
IC MOSFET DVR INV 1.5A 16SOIC
Tube - 4 V ~ 6 V -40°C ~ 85°C (TA) Inverting High-Side or Low-Side N-Channel,P-Channel MOSFET - 33ns,27ns 0.8V,2.4V 1.5A,1.5A
IXBD4410SI
IXYS
Enquête
-
-
MOQ: 46  MPQ: 1
IC LOW SIDE DRIVER 16SOIC
Tube ISOSMART 10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting Low-Side IGBT,N-Channel,P-Channel MOSFET 1200V 15ns,15ns 1V,3.65V 2A,2A
IXBD4411SI
IXYS
Enquête
-
-
MOQ: 46  MPQ: 1
IC HIGH SIDE DRIVER 16SOIC
Tube ISOSMART 10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting High-Side IGBT,N-Channel,P-Channel MOSFET 1200V 15ns,15ns 1V,3.65V 2A,2A