- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 632
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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|
|
Diodes Incorporated |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC SYNCH MOSFET CNTRLR 4A 8SO
|
Tape & Reel (TR) | - | 5 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SO | Non-Inverting | High-Side or Low-Side | 1 | N-Channel MOSFET | - | 450ns，21ns | - | 2.5A，6A | ||
|
|
|
Diodes Incorporated |
5,330
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNCH MOSFET CNTRLR 4A 8SO
|
Cut Tape (CT) | - | 5 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SO | Non-Inverting | High-Side or Low-Side | 1 | N-Channel MOSFET | - | 450ns，21ns | - | 2.5A，6A | ||
|
|
|
Diodes Incorporated |
5,330
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNCH MOSFET CNTRLR 4A 8SO
|
- | - | 5 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SO | Non-Inverting | High-Side or Low-Side | 1 | N-Channel MOSFET | - | 450ns，21ns | - | 2.5A，6A | ||
|
|
|
ON Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER HIGH SIDE 8SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOP | Non-Inverting | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 70ns，30ns | 1V，3.6V | 250mA，500mA | ||
|
|
|
ON Semiconductor |
9,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HIGH SIDE 8SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOP | Non-Inverting | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 70ns，30ns | 1V，3.6V | 250mA，500mA | ||
|
|
|
ON Semiconductor |
9,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HIGH SIDE 8SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOP | Non-Inverting | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 70ns，30ns | 1V，3.6V | 250mA，500mA | ||
|
|
|
ON Semiconductor |
42,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOP
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
|
|
|
ON Semiconductor |
43,853
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOP
|
Cut Tape (CT) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
|
|
|
ON Semiconductor |
43,853
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOP
|
- | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
|
|
|
STMicroelectronics |
25,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC IGBT/MOSFET DRIVER ADV 8-SOIC
|
Tape & Reel (TR) | - | 12 V ~ 26 V | -40°C ~ 150°C (TJ) | 8-SO | Non-Inverting | High-Side | 1 | IGBT，N-Channel MOSFET | - | 100ns，100ns (Max) | 0.8V，4.2V | 1.3A，1.7A | ||
|
|
|
STMicroelectronics |
26,196
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC IGBT/MOSFET DRIVER ADV 8-SOIC
|
Cut Tape (CT) | - | 12 V ~ 26 V | -40°C ~ 150°C (TJ) | 8-SO | Non-Inverting | High-Side | 1 | IGBT，N-Channel MOSFET | - | 100ns，100ns (Max) | 0.8V，4.2V | 1.3A，1.7A | ||
|
|
|
STMicroelectronics |
26,196
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC IGBT/MOSFET DRIVER ADV 8-SOIC
|
- | - | 12 V ~ 26 V | -40°C ~ 150°C (TJ) | 8-SO | Non-Inverting | High-Side | 1 | IGBT，N-Channel MOSFET | - | 100ns，100ns (Max) | 0.8V，4.2V | 1.3A，1.7A | ||
|
|
|
ON Semiconductor |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR SGL 9A HS 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Low-Side | 1 | N-Channel MOSFET | - | 23ns，19ns | - | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
12,541
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A HS 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Low-Side | 1 | N-Channel MOSFET | - | 23ns，19ns | - | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
12,541
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A HS 8-SOIC
|
- | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Low-Side | 1 | N-Channel MOSFET | - | 23ns，19ns | - | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR SGL 9A TTL 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Low-Side | 1 | N-Channel MOSFET | - | 23ns，19ns | 0.8V，2V | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
8,665
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A TTL 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Low-Side | 1 | N-Channel MOSFET | - | 23ns，19ns | 0.8V，2V | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
8,665
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A TTL 8-SOIC
|
- | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Low-Side | 1 | N-Channel MOSFET | - | 23ns，19ns | 0.8V，2V | 10.6A，11.4A | ||
|
|
|
Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
Tape & Reel (TR) | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
10,784
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
Cut Tape (CT) | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA |
